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    Espressif Inc ESP32-H2-MINI-1-N2

    RF TXRX MODULE BT PCB TRACE SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESP32-H2-MINI-1-N2 Cut Tape 1,187 1
    • 1 $3.58
    • 10 $3.091
    • 100 $2.6885
    • 1000 $2.54872
    • 10000 $2.54872
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    ESP32-H2-MINI-1-N2 Digi-Reel 1,187 1
    • 1 $3.58
    • 10 $3.091
    • 100 $2.6885
    • 1000 $2.54872
    • 10000 $2.54872
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    ESP32-H2-MINI-1-N2 Reel 650 650
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    • 1000 $2.41409
    • 10000 $2.17185
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    Mouser Electronics ESP32-H2-MINI-1-N2 4,662
    • 1 $1.99
    • 10 $1.99
    • 100 $1.99
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    EBV Elektronik ESP32-H2-MINI-1-N2 26 Weeks 650
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    Espressif Inc ESP32-S2-MINI-2-N4

    RF TXRX MOD WIFI PCB TRACE SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESP32-S2-MINI-2-N4 Digi-Reel 898 1
    • 1 $4.09
    • 10 $3.538
    • 100 $3.0794
    • 1000 $2.92024
    • 10000 $2.92024
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    ESP32-S2-MINI-2-N4 Cut Tape 898 1
    • 1 $4.09
    • 10 $3.538
    • 100 $3.0794
    • 1000 $2.92024
    • 10000 $2.92024
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    ESP32-S2-MINI-2-N4 Reel 650 650
    • 1 -
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    • 1000 $2.767
    • 10000 $2.5357
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    Mouser Electronics ESP32-S2-MINI-2-N4 4,526
    • 1 $2.32
    • 10 $2.32
    • 100 $2.32
    • 1000 $2.32
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    TME ESP32-S2-MINI-2-N4 636 1
    • 1 $3.69
    • 10 $3.38
    • 100 $2.83
    • 1000 $2.83
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    EBV Elektronik ESP32-S2-MINI-2-N4 650 26 Weeks 1
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    New Advantage Corporation ESP32-S2-MINI-2-N4 520 1
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    • 100 $9.92
    • 1000 $9.18
    • 10000 $9.18
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    Espressif Inc ESP32-MINI-1U-H4

    RF TXRX MOD BLUETOOTH U.FL SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESP32-MINI-1U-H4 Digi-Reel 570 1
    • 1 $4.18
    • 10 $3.615
    • 100 $3.1469
    • 1000 $2.9844
    • 10000 $2.9844
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    ESP32-MINI-1U-H4 Cut Tape 570 1
    • 1 $4.18
    • 10 $3.615
    • 100 $3.1469
    • 1000 $2.9844
    • 10000 $2.9844
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    Mouser Electronics ESP32-MINI-1U-H4 4,484
    • 1 $2.38
    • 10 $2.38
    • 100 $2.38
    • 1000 $2.38
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    EBV Elektronik ESP32-MINI-1U-H4 26 Weeks 1
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    Espressif Inc ESP32-H2-MINI-1-H2

    ESP32-H2-MINI-1 IS A POWERFUL, G
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESP32-H2-MINI-1-H2 Digi-Reel 466 1
    • 1 $3.65
    • 10 $3.15
    • 100 $2.7398
    • 1000 $2.59744
    • 10000 $2.59744
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    Espressif Inc ESP32-H2-MINI-1U-N2

    ESP32-H2-MINI-1U IS A POWERFUL,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESP32-H2-MINI-1U-N2 Digi-Reel 420 1
    • 1 $3.65
    • 10 $3.15
    • 100 $2.7398
    • 1000 $2.59744
    • 10000 $2.59744
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    ESP32-H2-MINI-1U-N2 Cut Tape 420 1
    • 1 $3.65
    • 10 $3.15
    • 100 $2.7398
    • 1000 $2.59744
    • 10000 $2.59744
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    EBV Elektronik ESP32-H2-MINI-1U-N2 10 Weeks 650
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    Find more 2MIN price and stock on Findchips.com

    2MIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5687 general electric

    Abstract: mitsubishi 1183 MGF0912A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power


    Original     		MGF0912A MGF0912A 33dBm June/2004 5687 general electric mitsubishi 1183 PDF

    MGFC42V5964A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5964A 5.9 - 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFC42V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFC42V5964A MGFC42V5964A Item-51] PDF

    MGFS45V2735

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		MGFS45V2735 MGFS45V2735 -45dBc 25deg PDF

    4SP820M T

    Abstract: 10SP470M 4SP1000M sanyo OS-CON 25SP56M 6SP220M SANYO 6SP390M 4SP560M T 10SP56M 16SP33M 20SP22M
    Text: TM 2. SPECIFICATIONS FOR EACH SERIES Large Capacitance and Low ESR Optimum for Computer Audio etc. SP Items Category temperature range Tolerance on rated capacitance 120Hz Tangent of loss angle(tanδ) (120Hz) Leakage current (µA/2min)(or less) ※2 ESR (100k to 300kHz)


    Original     		120Hz) 300kHz) 100kHz, 25WV20V 2SP1000M 2R5SP1200M 4SP1000M 6SP680M 4SP820M 4SP820M T 10SP470M 4SP1000M sanyo OS-CON 25SP56M 6SP220M SANYO 6SP390M 4SP560M T 10SP56M 16SP33M 20SP22M PDF

    MGFC42V5258

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		MGFC42V5258 MGFC42V5258 June/2004 PDF

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		MGFC40V3742 MGFC40V3742 29dBm 10MHz June/2004 PDF

    MGFC41V5964

    Abstract: fet 30 f 124
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4


    Original     		MGFC41V5964 MGFC41V5964 50ohm Item-51] 30dBm fet 30 f 124 PDF

    MGFC40V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V3742 3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		MGFC40V3742 MGFC40V3742 29dBm 10MHz PDF

    signal strength meter

    Abstract: RF Transmitter 315MHz rf 315mhz LED display for radio meter led bargraph meter 315MHz RF
    Text: RF HAND HELD RF METER • • • • • • • • • Hand Held Signal Strength Meter Detects Carrier RF Activity 10 digit LED Display with Peak Hold Displays -108dBm to –40dBm Signal Strength Operates from Single PP3 Battery Battery Low Indication Auto Shutoff after 2min


    Original     		-108dBm 40dBm 84MHz 50MHz DS066-4 signal strength meter RF Transmitter 315MHz rf 315mhz LED display for radio meter led bargraph meter 315MHz RF PDF

    Untitled

    Abstract: No abstract text available
    Text: Miniature Aluminum Electrolytic Capacitors UZ 5mm in length, temperature of wide range solvent proof Series UZ series measures 5mm in length and have stable characteristics at the temperature of wide range (−55 to +105°C) They are miniature, long life and solvent proof (within 2minutes).


    Original     		120Hz) C/Z20 1000hrs. 100kHz, 16MV10UZ PDF

    Untitled

    Abstract: No abstract text available
    Text: PACKAGE OUTLINE DRAWINGS S C Series o 2.0 1 CM 6 <£> cvi Lflj L 2MIN 1.3 5 ±0.4 - , + 0 .4 5.1 -o.i 4.35±0.4 1.2*0.2 +4 - 0 K-Pack Series 6 . 5 ± 0.2 5 ± 0.2 nc 0 . 6 *02 -o.i q f\j _ bo m M n *0.2 . 9 -o.i 4 Collmer Semiconductor, Inc. • (214 233*1589


    OCR Scan     		PDF

    MGFC50G

    Abstract: No abstract text available
    Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2


    Original     		MGFC50G5867 MGFC50G5867, CSTG-14855 MGFC50G PDF

    15000UF

    Abstract: No abstract text available
    Text: Large Aluminum Electrolytic Capacitors PL-FA Snap-in Type 105°C Standard Series • Specifications Items Rated voltage Operating temperature range Capacitance tolerance V (°C) (%) Tangent of loss angle (tan δ)(120Hz)(MAX.) Leakage current (L.C.)(µA/after 2min.)(MAX.)


    Original     		120Hz) C/Z20 3000hrs. 120Hz, 15000UF PDF

    5.8 ghz amplifier 10w

    Abstract: Gaas Power Amplifier 10W
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		MGFC40V5258 MGFC40V5258 25deg June/2004 5.8 ghz amplifier 10w Gaas Power Amplifier 10W PDF

    PO32

    Abstract: MGFC42V3436
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 - 3.6


    Original     		MGFC42V3436 MGFC42V3436 -45dBc 32dBm June/2004 PO32 PDF

    MGFC42V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004 PDF

    MGFC42V3742

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET . DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2


    Original     		MGFC42V3742 MGFC42V3742 31dBm 10MHz PDF

    MGFC42V5258

    Abstract: GF-18 5.8GHz
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V5258 5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC42V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		MGFC42V5258 MGFC42V5258 25deg GF-18 5.8GHz PDF

    5.8GHz

    Abstract: 5.8 ghz amplifier 10w MGFC40V5258
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5258 5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters 24+/-0.3 R1.25 1 0.6+/-0.15 2MIN The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8


    Original     		MGFC40V5258 MGFC40V5258 25deg 5.8GHz 5.8 ghz amplifier 10w PDF

    MGFC47V5864

    Abstract: 5.8 ghz transmitter
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz


    Original     		MGFC47V5864 MGFC47V5864 47dBm June/2004 5.8 ghz transmitter PDF

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN


    Original     		MGF0912A MGF0912A, 33dBm PDF

    6SL22M

    Abstract: 10SL100M 10SL10M 6SL47M 6SL10M 6SL15M SANYO 3.3uf ESR 10SL47M 10SL4R7M 25SL6R8M
    Text: Specifications Items 1 Operating temperature range 2 Capacitance tolerance 120Hz 3 Tangent of loss angle(120Hz) Leakage current(uA/after 2min.) 4 (or less) 2 5 ESR(100k 300kHz) Temperature characteristics 6 Impedance ratio at 100kHz High-temperature load


    Original     		120Hz) 300kHz) 100kHz 105degrees 2000Hrs. 1000Hrs. 55degrees -55degrees 6SL22M 10SL100M 10SL10M 6SL47M 6SL10M 6SL15M SANYO 3.3uf ESR 10SL47M 10SL4R7M 25SL6R8M PDF

    10SH220M

    Abstract: 20SH100M 25SH1R5M 20SH47M 16SH10M 25SH15M 16WV 16SH1M 25SH3R3M 16SH2R2M
    Text: Specifications Items 1 Operating temperature 2 Capacitance tolerance 120Hz 3 Tangent of loss angle(120Hz) 4 Leakage current(uA/2min.)(or less) 5 ESR(100k 300kHz) Temperature characteristics 6 Impedance ratio at 100kHz 2 High-temperature load 105degrees C,


    Original     		120Hz) 300kHz) 100kHz 105degrees 5000Hrs. 1000Hrs. 60degrees 55degrees 10SH220M 20SH100M 25SH1R5M 20SH47M 16SH10M 25SH15M 16WV 16SH1M 25SH3R3M 16SH2R2M PDF

    SC371-10A

    Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
    Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking


    Original     		SC371-10A SC371-10A TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A PDF