2H24D Search Results

MSM6546

Abstract: MSM6546L QFP100-P-1420-BK QFP100-P-1420-K
Contextual Info: O K I Semiconductor M S M 6546/6546L-X X Operatable at 0.9V and Built-in LCD Driver 4-Bit Microcontroller GENERAL DESCRIPTION MSM6546/6546L-XX is a 4-bit, low-power microcontroller manufactured in a CMOS silicon gate process. The microcontroller can be initialized and operated at the low supply voltage of 0.9 V.

T462 transistor

Abstract: EZ613 transistor t462 MSM51C256 MSM51C256-10 MSM51C256-80 MSM51C256RS
Contextual Info: 4bE D rtTTT - • b 7 2 4 2 4 D O D D ' m û ô ITS H O K I J I O K I S E M I C O N D U C T O R GROUP O K I sem iconductor_ T - V * - Z l ' f MSM51C256_ S 262,144 W O R D X1-BIT S D Y N A M IC R A M GENERAL DESCRIPTION The MSM51C256 is a new generation dynamic RAM organized as 262,144 words by 1 bit.

MSM51V17100

Abstract: 724540
Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

MSM514260

Contextual Info: O K I Semiconductor M SM 5 1 4 2 6 0 /S L _ 262,144-Words x 16-Bits Dynamic RAM: Fast Page Mode Type D ESCR IPTIO N The M S M 514260/SL is a new generation dynam ic RAM organized as 262,144 words by 16 bits. The technology used to fabricate the M SM 514260/SL is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V16165A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16165A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The M SM51V16165A is

Contextual Info: O K I Semiconductor MSM7577 Voice Signal Level Control LSI GENERAL DESCRIPTION The MSM7577 is an LSI for Audio Signal Level adjustment for telephone set, etc. Conventionally, its circuit has been made within individual unit, such as amplifiers, resistors and

SM56V16800

Abstract: transistor 305 56V16800 active suspension BA RV 2H24D d0117
Contextual Info: OKI Semiconductor MSM56V16800 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M SM 56V16800 is a 2-b an k x 1,048,576-w ord x 8-bit synchronous D ynam ic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.

DS32

Contextual Info: O K I Semiconductor MSC23432B-XXBS32/DS32 4,194,304-Word by 32-Bit DRAM Module: Fast Page Mode D E S C R IP TIO N The OKI M SC 23432B-xxBS32/D S32 is a fully decoded 4,194,304 word x 32-bit CM OS Dynamic Random Access Memory Module composed of thirty-two 4-M b DRAMs in SOJ M SM514100B packages mounted