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    144-612H-21H Amphenol Communications Solutions Paladin RPO, DO, 6-Pair, 10 Column, 2.25mm Wipe, APP Visit Amphenol Communications Solutions
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    2H21 Price and Stock

    Hirose Electric Co Ltd DF3E-2P-2H(21)

    CONN HEADER SMD R/A 2POS 2MM
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    Hirose Electric Co Ltd DF3EA-7P-2H(21)

    CONN HEADER SMD R/A 7POS 2MM
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    Hirose Electric Co Ltd DF3E-4P-2H(21)

    CONN HEADER SMD R/A 4POS 2MM
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    Hirose Electric Co Ltd DF3EA-10P-2H(21)

    CONN HEADER SMD R/A 10POS 2MM
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    Hirose Electric Co Ltd DF3E-8P-2H(21)

    CONN HEADER SMD R/A 8POS 2MM
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    2H21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N2150

    Abstract: 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 2N2151 546i 00CU Transistor CR64
    Text: I ● r I I Ill e documentation ana process conversion medsures necessary to comply .itn this revision shall be 1991. co.pletea by 10 C&ok I I I I HIL-S-1950+3/Z77D I 10 JLUIe 1991 SUPERSEDING MI L- S-19 SO0/277C 12 August 1968 MILITARY SEH!CONCYUCTOR SPECIFICATIOW


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    PDF HIL-S-1950 3/Z77D SO0/277C 2N21S0 2N2151 S-195CW. 2N2150 2N7151 N2150 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 546i 00CU Transistor CR64

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


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    PDF AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original
    PDF AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original
    PDF AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A

    ftt-10a

    Abstract: FTT-10 echelon IMIT thermostat nv16 D2-3372 2H41 FTT-10 078-0156-01F 1h41 NV10
    Text: LonWorks Communication Option Module for VTAC 7 Drives M/N 2LW3000 Instruction Manual D2-3498 The information in this manual is subject to change without notice. Throughout this manual, the following notes are used to alert you to safety considerations:


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    PDF 2LW3000 D2-3498 D2-3498­ ftt-10a FTT-10 echelon IMIT thermostat nv16 D2-3372 2H41 FTT-10 078-0156-01F 1h41 NV10

    diode C522

    Abstract: A02N-5
    Text: 123455657 Enhanced LIN Transceiver 89ABCD9E7 1 RxD 1 EN 2 WAKE 3 TxD 4 Rev.2.x and SAE J2602 1 Baud rate up to 20 kBaud 1 Wide operating voltage range VS = 5 to 27 V 1 Very low standby current consumption of 10µA in sleep mode MLX 80020 1 Bus and local wake up capable with source recognition


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    PDF 89ABCD9E7 J2602 MLX80020 ISO14001 diode C522 A02N-5

    TEKELEC 297

    Abstract: intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC
    Text: intJ AP-40 APPLICATION NOTE June 197B <s> r? tV8P> A sy rV A''" O ? N ^ rf<> > v « ® Intel Corporation, 1978 w ^ •c T v > V 9800755 R elated In te l P u b lic atio n s ” M CS-48 M ic ro c o m p u te r F a m ily U sers' M a n u a l” "M C S-48 A s s e m b ly Language P ro g ra m m in g M a n u a l”


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    PDF AP-40 CS-48 B-1160 D-2085 D-8000 0732t RG20LS TEKELEC 297 intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


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    PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    2N924

    Abstract: IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122
    Text: INTEX/ SEMITRONICS CORP 27E D • MfibTEMb Q0D027Ö 4 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon small signal transistors general purpose — alloy i f j 1#* 1 1 i Polarity ! ì 2H32M i 2N3278 ‘ 1ÎN32tk <


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    PDF Q0D027Ã 2N327A N32tk 2N32W 2N323B-2N33Ã 2H92J 2N924 2N926 2N927 2N937 2N924 IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122

    2N924

    Abstract: 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025
    Text: je m lt r o n ic r sem iconductors s s S em itronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Polarity tm Power Dissipation @ 25°C mW t . ij (°C) BVcbo (volts) PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP


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    PDF 2n327a 2n327b 2n32ba 2n328b 2n329a 2N924 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    2N217s

    Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025
    Text: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP


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    PDF 2N327A 2N327B 2N326A 2N328B 2N329A 2N32SB 2N330A 2N923 2N924 2N925 2N217s 2N1028 2N936 2NJ228 2n1854 2N3346 2N16S5 2N1025

    MC789P

    Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
    Text: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series


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    PDF C300/M 1000/M MC660 C500/M C2100/M C2000 C3000 930/M C200/M C900/M MC789P MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P

    123H2

    Abstract: CSS312R CSS-312R
    Text: I 2 2. M « * Package Outline Polarity Device mm inch Super-bright Red (R)/ Orange (E)/ Red (D) Bright Red (HI Amber (A) Xp = 660 nm X p -655/695 nm \p = 635/610 nm CSS-310R- 21 C S S - 3 10E 1 1 Yellow (Y)/Super Bright Yellow (T) Green (G)/ Device Bright Green IF) Package


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    PDF CSS-310R- CSS-310D- -3113R-21 CSS-3113D-21 113H-21 CSS-312R-21 CSS-312D-21 CSS-3123D-21 123H-21 CSS-313R-21 123H2 CSS312R CSS-312R

    2N236A

    Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
    Text: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N236A 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214

    2N1227

    Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
    Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation


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    PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1227 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N236A 2N420

    SEM 5027A

    Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
    Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES


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    PDF

    Intel 8080 Users Manual

    Abstract: intel 8080 manual Intel ICE-30 SCANBE s203 Multibus arbitration protocol SBC 104 intel motherboard schematic Multibus ii protocol SCANBE SCANBE ejector
    Text: in y APPLICATION NOTE 5 &c p o ' z <ti íí' i Intel Corporation, 1S77 c çtr AP-28 Related Intel Publications IN TE L LE C M icrocom puter D evelopm ent System Manual, 98-132. Hardware Reference System 80/1 0 M icrocom puter Hardware R eference Manual, 98-316.


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    PDF AP-28 CH-6021 Intel 8080 Users Manual intel 8080 manual Intel ICE-30 SCANBE s203 Multibus arbitration protocol SBC 104 intel motherboard schematic Multibus ii protocol SCANBE SCANBE ejector

    Motorola transistors MRF 947

    Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
    Text: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,


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    PDF

    T-532G-11

    Abstract: 3G11 544y
    Text: Package Outline s o ¡Q* —• I Polarity Device Super-bright Red (R / Orange (E)/ Yellow (Y )/Super/ Green (G )/ Device Red (D) Bright Red (H) Amber (A) Bright Yellow (T) Bright Green (F) Package \ p = 6 6 0 nm Xp = 6 5 5 /6 9 5 nm Xp = 6 3 5 /6 1 0 nm


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    PDF CSD-5622R-21 -5623D -5623H CST-532R-21 T-532D CSD-5622E-1 CSD-5622Y-1 -5622G CSD-5623Y-1 CSD-5623A-1 T-532G-11 3G11 544y