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    Sensata Technologies SSH66XU12N100

    Level Sensors LLS
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    TTI SSH66XU12N100 Each 1 1
    • 1 $199.64
    • 10 $188.12
    • 100 $188.12
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    Electro-Luminx Lighting Corporation 0200 INT EXTREME BLUE GREEN

    EL tape; L: 5000mm; extreme blue-green; 354cd/m2; λd: 527nm; 6570K
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    TME 0200 INT EXTREME BLUE GREEN 20 5
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    • 10 $67.5
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    Electro-Luminx Lighting Corporation 0400 INT EXTREME ORANGE

    EL tape; L: 5000mm; extreme orange; 392cd/m2; λd: 600nm; 2700K
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    TME 0400 INT EXTREME ORANGE 20 5
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    • 10 $176
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    Electro-Luminx Lighting Corporation 0200 INT EXTREME CARIBBEAN BLUE

    EL tape; L: 5000mm; extreme caribbean blue; 114cd/m2; λd: 487nm
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    TME 0200 INT EXTREME CARIBBEAN BLUE 10 5
    • 1 -
    • 10 $73.75
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    Electro-Luminx Lighting Corporation 0100 INT EXTREME ORANGE

    EL tape; L: 5000mm; extreme orange; 392cd/m2; λd: 600nm; 2700K
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    TME 0100 INT EXTREME ORANGE 5 5
    • 1 -
    • 10 $43.4
    • 100 $41.9
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    INTEX Datasheets Context Search

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    MIRL17-900

    Abstract: International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX
    Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,


    Original     		MIRL17-900 mirl17-900 International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX PDF

    Untitled

    Abstract: No abstract text available
    Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,


    Original     		MIRL17-900 100mm. mirl17-900 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,


    Original     		MIRL17-900 Hig8142 mirl17-900 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW Ultrafast Pulsed Broadband Infrared Light Source INT05-200 Preliminary Specifications Intex has developed a new, com pact and ultrafast version of its unique high -intensity pulsed infrared IR light source capable of oper ating at high frequencies. The new em itter has 50% faster m odulation rate


    Original     		INT05-200 int05-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,


    Original     		MIRL17-900 MIRL17-900. mirl17-900 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,


    Original     		MIRL17-900 mirl17-900 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,


    Original     		MIRL17-900 100mm. mirl17-900 PDF

    TIP3I

    Abstract: No abstract text available
    Text: INTEX/ SEMITRONICS CORP 57E I> • Mflti24b 0GD0324 ? discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 General Purpose Amplifier and Switching Applications IC VC B O VCEO A M IV ) PD |W ) Package IMPN 1 40 40 30 TO-220 TIP29 1 60 60 30 TO-220


    OCR Scan     		Mflti24b 0GD0324 O-220 TIP29B TIP30A T1P29A TIP30 TIP29 TIP3I PDF

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


    OCR Scan     		2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511 PDF

    1Nu5

    Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
    Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p


    OCR Scan     		1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128 PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238 PDF

    2N1602

    Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
    Text: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current


    OCR Scan     		2N682 2N685 T0-48 2N686 2N687 2N688 2N889 2N690 2N764* 2N765Â 2N1602 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146 PDF

    INTEX

    Abstract: D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830
    Text: INTEX/ SEMITRÔNICS CORP 000032^ 27E D h m semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current


    OCR Scan     		AMPERES-SCHOTTKY/DO-41 AMPERES-SCHOTTKY/DO-27 SESFR21000 RECOVERY/DO-27 SESFR350 SESFR3100 SESFR3200 SESFR3400 SESFR3600 INTEX D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830 PDF

    IN6292A

    Abstract: diode 1n6285A diode 1.5KE43A SKE20 I.5KE SKE22 in6292 1-6ke200 SKE1 1.5KE20A/1
    Text: INTEX/ SEMITRÖNICS CORP 5?E ]> semitron hot line 4ñbT24b 0000311 T • 'P-l! - Z3 TOLL FREE NUMBER 800-777-3960 ELECTRICAL CHARACTERISTICS a 25°C I REVERSEl BREAKDOWN VOLTAGE I standoffI JEDEC TYPE NUMBER 36 „ GENERAL I VOLTAGE I SEMICONDUCTOR I PART


    OCR Scan     		5KE10 5KE10A 5KE11 5KE11A 6KE12 5KE12A 5KE13 5KE13A 5KE15 5KE15A IN6292A diode 1n6285A diode 1.5KE43A SKE20 I.5KE SKE22 in6292 1-6ke200 SKE1 1.5KE20A/1 PDF

    1N1407

    Abstract: 1N1412 1N1745 1n1749 1n1750 1N1408 1N1746 1N140 1N1733 1N1751
    Text: INTEX/ SEMITRONICS CORP jcmitron 57E I> SEMICONDUCTORS 'devices Semitronics Corp. o[ y ; ^ special package silicon rectifiers high voltage axial lead silicon cartridge rectifiers Peak Inverse Voltage volts (Note t) Max. RMS Input (volts) (Note 2) 6Qd 800


    OCR Scan     		IN596* 1N597 1N598* 1N140S 1N1407 1N1133 1N1745 1N1134 1N1746 1N1135 1N1412 1N1745 1n1749 1n1750 1N1408 1N1746 1N140 1N1733 1N1751 PDF

    Npn 310

    Abstract: No abstract text available
    Text: INTEX/ SENITRONICS 27E D • MfibTSma jo m iu u ii GD0 Ü5 Ö3 fi ■ 7 ^ < Z 7 - 0 / Semitronics Corp. SEMICONDUCTORS TO-92 transistors Maximum Ratings Type Packtge D iv « Hfe Min/Max VCE Sat 3 Iç/la Volts mA/mA Cch pF Mas _ _ . _ 2N3903 2N3904 2N3905


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4264 2N4265 Npn 310 PDF

    IN1733

    Abstract: No abstract text available
    Text: INTEX/ SEMITRONICS CORP j c m it r o n S e m it r o n ic s 57E I> SEMICONDUCTORS 'devices C o r p . y ; o ^ [ special package silicon rectifiers high voltage axial lead silicon cartridge rectifiers Peak Inverse Voltage volts (Note t) Max. RMS Input (volts)


    OCR Scan     		IN597 1N1406 1N1407 1N1408 1N1409 1N1410 IN14U 1N1412 1N1413 1NJ730 IN1733 PDF

    TO1C

    Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
    Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65


    OCR Scan     		2K337S 2K3632 2N3733 T0-60 TQ-60 2N3866 N3924 2N392B -2N3927 2N401Ã TO1C 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 PDF

    2N924

    Abstract: IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122
    Text: INTEX/ SEMITRONICS CORP 27E D • MfibTEMb Q0D027Ö 4 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon small signal transistors general purpose — alloy i f j 1#* 1 1 i Polarity ! ì 2H32M i 2N3278 ‘ 1ÎN32tk <


    OCR Scan     		Q0D027Ã 2N327A N32tk 2N32W 2N323B-2N33Ã 2H92J 2N924 2N926 2N927 2N937 2N924 IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122 PDF

    vacuum tube 6z4

    Abstract: 5Y4 tube 1N2637 1N4142 1N1238 17ax4 tube 6AX5 17AX4 1N2631 10s100
    Text: INTEX/ SEMITRONICS CORP 27E D • HfltlSMb 0000302 ñ I semitron hot line t discrete devices o i-oi - TOLL FREE NUMBER 800-777-3960 r - 3 3-2 3 special package silicon rectifiers conrd stud mounted fast recovery silicorfrèctifiers C*M DO-27 case style Maxim um


    OCR Scan     		DO-27 1N3885 DO-10 1N3886 1N3887 1N2632 INI262 12AX4, vacuum tube 6z4 5Y4 tube 1N2637 1N4142 1N1238 17ax4 tube 6AX5 17AX4 1N2631 10s100 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan     		2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEX/ SEMITRÔNICS CORP 000032^ h m 27E D semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current


    OCR Scan     		AMPERES-SCHOTTKY/DO-41 PDF

    2N2S05

    Abstract: 2n2510 2N2511
    Text: INTEX/ SEMITRONICS CORP jEinitron 27E D • HflbTEHb 0000201 M I 7W -¿/ discrete devices SEMICONDUCTORS Semitronics Corp. metal can transistors cont'd silicon small signal transistors M i ximum Ratini Onice Type Package 2N2351A NPN TO 2N2352 NPN TO 46 46


    OCR Scan     		2N29S9 2N302Û 2N3036 2N2S05 2n2510 2N2511 PDF

    P6KE19A

    Abstract: P6KE-27 P6KE-19a 955 539 ic p6ke73
    Text: INTEX/ SEMITRONICS CORP 27E D • H i b l S U 00QÜ313 a discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 T-H-AÒ ^ E L E C T R IC A L C H A R A C T E R IS T IC S a 25CC GENERAI. samcoNDucTOfl REVERSE STANDOFF VOLTAGE PART NUMBER (NOTED VR


    OCR Scan     		P6KE75 P6KE200CA' P6KE19A P6KE-27 P6KE-19a 955 539 ic p6ke73 PDF