INTEX Search Results

MIRL17-900

Abstract: International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX
Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,

TIP3I

Contextual Info: INTEX/ SEMITRONICS CORP 57E I> • Mflti24b 0GD0324 ? discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 General Purpose Amplifier and Switching Applications IC VC B O VCEO A M IV ) PD |W ) Package IMPN 1 40 40 30 TO-220 TIP29 1 60 60 30 TO-220

Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,

Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,

Contextual Info: NEW Ultrafast Pulsed Broadband Infrared Light Source INT05-200 Preliminary Specifications Intex has developed a new, com pact and ultrafast version of its unique high -intensity pulsed infrared IR light source capable of oper ating at high frequencies. The new em itter has 50% faster m odulation rate

2N1203

Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
Contextual Info: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

2N9308

Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
Contextual Info: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5

2N1602

Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current

INTEX

Abstract: D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830
Contextual Info: INTEX/ SEMITRÔNICS CORP 000032^ 27E D h m semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

IN6292A

Abstract: diode 1n6285A diode 1.5KE43A SKE20 I.5KE SKE22 in6292 1-6ke200 SKE1 1.5KE20A/1
Contextual Info: INTEX/ SEMITRÖNICS CORP 5?E ]> semitron hot line 4ñbT24b 0000311 T • 'P-l! - Z3 TOLL FREE NUMBER 800-777-3960 ELECTRICAL CHARACTERISTICS a 25°C I REVERSEl BREAKDOWN VOLTAGE I standoffI JEDEC TYPE NUMBER 36 „ GENERAL I VOLTAGE I SEMICONDUCTOR I PART

1N3549

Abstract: 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256
Contextual Info: xemitran ffP IP P ftih v V P B M 5?E D • OOOOHT? fi semiconductors SemitronicsCorp. INTEX/ SEMITRONICS discrete devices CORP silicon rectifiers cont’d miniature axial lead silicon rectifiers DO-41 case style— t»m 1N3241 1N3242 1N3243 1N3244 1N3245 1N3246

Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,

Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,

Npn 310

Contextual Info: INTEX/ SENITRONICS 27E D • MfibTSma jo m iu u ii GD0 Ü5 Ö3 fi ■ 7 ^ < Z 7 - 0 / Semitronics Corp. SEMICONDUCTORS TO-92 transistors Maximum Ratings Type Packtge D iv « Hfe Min/Max VCE Sat 3 Iç/la Volts mA/mA Cch pF Mas _ _ . _ 2N3903 2N3904 2N3905

IN1733

Contextual Info: INTEX/ SEMITRONICS CORP j c m it r o n S e m it r o n ic s 57E I> SEMICONDUCTORS 'devices C o r p . y ; o ^ [ special package silicon rectifiers high voltage axial lead silicon cartridge rectifiers Peak Inverse Voltage volts (Note t) Max. RMS Input (volts)

TO1C

Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
Contextual Info: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65

2N924

Abstract: IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122
Contextual Info: INTEX/ SEMITRONICS CORP 27E D • MfibTEMb Q0D027Ö 4 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon small signal transistors general purpose — alloy i f j 1#* 1 1 i Polarity ! ì 2H32M i 2N3278 ‘ 1ÎN32tk <

vacuum tube 6z4

Abstract: 5Y4 tube 1N2637 1N4142 1N1238 17ax4 tube 6AX5 17AX4 1N2631 10s100
Contextual Info: INTEX/ SEMITRONICS CORP 27E D • HfltlSMb 0000302 ñ I semitron hot line t discrete devices o i-oi - TOLL FREE NUMBER 800-777-3960 r - 3 3-2 3 special package silicon rectifiers conrd stud mounted fast recovery silicorfrèctifiers C*M DO-27 case style Maxim um

Transistors 2n551

Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts

Contextual Info: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,

Contextual Info: INTEX/ SEMITRÔNICS CORP 000032^ h m 27E D semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

2N2S05

Abstract: 2n2510 2N2511
Contextual Info: INTEX/ SEMITRONICS CORP jEinitron 27E D • HflbTEHb 0000201 M I 7W -¿/ discrete devices SEMICONDUCTORS Semitronics Corp. metal can transistors cont'd silicon small signal transistors M i ximum Ratini Onice Type Package 2N2351A NPN TO 2N2352 NPN TO 46 46

P6KE19A

Abstract: P6KE-27 P6KE-19a 955 539 ic p6ke73
Contextual Info: INTEX/ SEMITRONICS CORP 27E D • H i b l S U 00QÜ313 a discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 T-H-AÒ ^ E L E C T R IC A L C H A R A C T E R IS T IC S a 25CC GENERAI. samcoNDucTOfl REVERSE STANDOFF VOLTAGE PART NUMBER (NOTED VR