2SK38 Search Results

2SK388

Abstract: 2sk38
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

2SK386

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK386 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATION'S. Unit in mm SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. X- 20.5MAX. ^3.3±Q2 d— -1Tm

Contextual Info: 2SK3857TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 0.2±0.05 0.8±0.05 0.3±0.05 • -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj

k3846

Contextual Info: 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications  Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.)  High forward transfer admittance : |Yfs| = 33 S (typ.)

smd transistor ISS

Abstract: 2SK3899 2SK38
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2

2SK3846

Abstract: K3846
Contextual Info: 2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOSIII 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.)

k3869

Abstract: 2SK3869 K386
Contextual Info: 2SK3869 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI 2SK3869 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)

2SK3847

Contextual Info: 2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U−MOS III 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Applications z Low drain-source ON resistance : RDS (ON) = 12 mΩ (typ.) z High forward transfer admittance : |Yfs| = 36 S (typ.)

k3878

Abstract: 2SK3878STA1 2sk3878
Contextual Info: 2SK3878 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSIV 2SK3878 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 1.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)

k3843

Abstract: 2SK3843 TC4090 32V16
Contextual Info: 2SK3843 シリコンNチャネルMOS形 U-MOSⅢ 東芝電界効果トランジスタ 2SK3843 ○ スイッチングレギュレータ､DC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 120 S (標準)

Contextual Info: IC SMD Type Product specification 2SK3814 TO-252 Features Low On-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.15

Contextual Info: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2

K3863

Abstract: 2SK3863 2SK386 K386
Contextual Info: 2SK3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)

k3828

Abstract: 2SK3828 82452
Contextual Info: 2SK3828 Ordering number : ENN8245 2SK3828 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2sk3875

Contextual Info: 2SK3875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)

K3823

Abstract: 2SK3823
Contextual Info: 2SK3823 Ordering number : ENN8241 2SK3823 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.

2SK383

Contextual Info: 2SK383 y U 3 > N » * » ; U M 0 S FET S IL IC O N N -C H A N N E L M O S F ET * * * * * * < y * HIGH S P E E D 1. Y 2. — Y K ly -i “ y P O W ER S W IT C H IN G Gate D rain { y y ' y :J F lan g e ) 3 . V — X ! S o u rce (D im ensions in mm) (J E D E C T O -2 2 0 A B )

Toshiba K3869

Abstract: K3869 Transistor K3869 2SK3869
Contextual Info: 2SK3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)

2SK389BL

Contextual Info: 2SK389BL Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

SJ 76 A DIODE

Abstract: 2sk387201l
Contextual Info: 2SK3872-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power See to P4 Applications Switching regulators

k3868

Abstract: 2SK3868 transistor Toshiba K3868 K386
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)

2SK389

Abstract: 2SJ109
Contextual Info: TO SH IBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

k3868

Abstract: 2SK3868 transistor Toshiba K3868
Contextual Info: 2SK3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI 2SK3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)