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    K3869 Price and Stock

    Vishay Intertechnologies CRCW060334R0FKEA

    Thick Film Resistors - SMD 1/10watt 34ohms 1%
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    TTI CRCW060334R0FKEA Reel 15,000 5,000
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    Vishay Intertechnologies WSC45275R000FEA

    Wirewound Resistors - SMD 2watts 5ohms 1%
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    TTI WSC45275R000FEA Reel 7,200 1,200
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    Vishay Intertechnologies CRCW201061K9FKEF

    Thick Film Resistors - SMD 3/4watt 61.9Kohms 1%
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    TTI CRCW201061K9FKEF Reel 4,000
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    Vishay Intertechnologies CW02C1K000JE70

    Wirewound Resistors - Through Hole 1K OHM 5% 2.5W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CW02C1K000JE70 Reel 1,000
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    K3869 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k3869

    Abstract: 2SK3869 K386
    Contextual Info: K3869 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3869 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)


    Original     		2SK3869 SC-67 2-10U1B 100us* k3869 2SK3869 K386 PDF

    Toshiba K3869

    Abstract: K3869 Transistor K3869 2SK3869
    Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 Toshiba K3869 K3869 Transistor K3869 2SK3869 PDF

    k3869

    Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
    Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 k3869 Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869 PDF

    K3869 Transistor

    Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
    Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 Transistor Toshiba K3869 2SK3667,2SK3869,K3869, PDF

    K3869

    Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386
    Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 Toshiba K3869 K3869 Transistor 2SK3869 k386 PDF

    K3869

    Abstract: K3869 Transistor Toshiba K3869 2SK3869
    Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)


    Original     		2SK3869 K3869 K3869 Transistor Toshiba K3869 2SK3869 PDF