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    2SK346 Price and Stock

    Toshiba America Electronic Components 2SK3466(TE24L,Q)

    MOSFET N-CH 500V 5A 4TFP
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    Toshiba America Electronic Components 2SK3462(TE16L1,NQ)

    MOSFET N-CH 250V 3A PW-MOLD
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    Quest Components 2SK3462(TE16L1,NQ) 1,093
    • 1 $1.04
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    Fuji Electric Co Ltd 2SK3469-01MR-F82

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    Quest Components 2SK3469-01MR-F82 1,600
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    Others 2SK3469-01MR

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    Chip 1 Exchange 2SK3469-01MR 200
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    2SK346 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK346 Hitachi Semiconductor Silicon N-Channel MOS FET Scan PDF
    2SK346 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK346 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK346 Unknown FET Data Book Scan PDF
    2SK3460 Sanken Electric N-Channel MOSFET Original PDF
    2SK3460 Sanken Electric TRANS MOSFET N-CH 150V 18A 3TO-220F Original PDF
    2SK3460 Sanken Electric MOSFET Selection Guide Original PDF
    2SK3461 Renesas Technology Original PDF
    2SK3461(L) Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    2SK3461L Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3461L Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3461(S) Renesas Technology Silicon N Channel Power MOS FET Power Switching Original PDF
    2SK3461S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3461S Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK3462 Toshiba FETs - Nch 150V Original PDF
    2SK3462 Toshiba Original PDF
    2SK3462 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3462(TE16L1,NQ) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 3A PW-MOLD Original PDF
    2SK3466 Toshiba Chopper Regulator Original PDF
    2SK3466 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF

    2SK346 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SK3467

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode


    Original     		2SK3467 O-263 2SK3467 PDF

    2sk3469

    Abstract: 2SK3469-01MR *k3469
    Text: 2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		2SK3469-01MR MOSFET200303 O-220F 2sk3469 2SK3469-01MR *k3469 PDF

    2SK3461

    Abstract: Hitachi DSA0076
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-944 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate


    Original     		2SK3461 ADE-208-944 Hitachi DSA0076 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 PDF

    2SK3460 equivalent

    Abstract: 2SK3460 FM20
    Text: 2SK3460 Absolute Maximum Ratings Ta = 25ºC Ratings Unit Symbol VDSS 150 V V(BR) DSS min 150 +20, –10 V ID ±18 A VTH 1.0 ±72 A Re (yfs) 13 EAS *2 35 (Tc = 25ºC) W Ratings typ I GSS VGSS PD I DSS RDS(on) (Ta = 25ºC) max Unit V I D = 100µA, VGS = 0V


    Original     		2SK3460 FM100 2SK3460 equivalent 2SK3460 FM20 PDF

    2SK3466

    Abstract: k3466
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 k3466 PDF

    2Sk3462

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 High Speed Switching, High Current Applications Switching Regulator, DC-DC Converter and Motor Drive Applications Features • • • • • 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.)


    Original     		2SK3462 2Sk3462 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 PDF

    k3462

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V Gate drive Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 k3462 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 PDF

    k3462

    Abstract: No abstract text available
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC/DC Converter and Motor Drive Applications Unit Drain-source voltage VDSS 250 V Drain-gate voltage (RGS = 20 kΩ) VDGR 250 V Gate-source voltage VGSS


    Original     		2SK3462 20controlled k3462 PDF

    2SK3466

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 PDF

    K346

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 K346 PDF

    2SK3466

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 PDF

    2SK3462

    Abstract: K3462
    Text: 2SK3462 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV 2SK3462 Switching Regulator, DC/DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: |Yfs| = 2.2 S (typ.)


    Original     		2SK3462 2SK3462 K3462 PDF

    2SK3468-01

    Abstract: No abstract text available
    Text: 2SK3468-01 Super FAP-G Series FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		2SK3468-01 O-220AB 2SK3468-01 PDF

    M2SK3467

    Abstract: d1499 2SK3467 2SK3467-Z MP-25 MP-25Z
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3467 N チャネル パワーMOS FET スイッチング用 工業用 2SK3467 は，N チャネル MOS FET でオン抵抗が低く，スイッチング特性が優れており，同期整流方式 DC/DC コンバー


    Original     		2SK3467 2SK3467 O-220AB 2SK3467-Z O-220SMDMP-25Z O-220SMD D14991JJ1V0DS00 M2SK3467 d1499 2SK3467-Z MP-25 MP-25Z PDF

    2SK3466

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.) • Low leakage current: IDSS = 100 A (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 PDF

    2SK3466

    Abstract: transistor MJ 122
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) · High forward transfer admittance: ïYfsï = 4.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 2SK3466 transistor MJ 122 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		2SK3461 REJ03G1102-0300 PRSS0004AE-A PRSS0004AE-B PDF

    tc 122 25 5

    Abstract: 2SK3466
    Text: 2SK3466 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3466 ○ チョッパレギュレータ用 • 単位: mm : RDS (ON) = 1.35 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)


    Original     		2SK3466 20070701-JA tc 122 25 5 2SK3466 PDF

    k3462

    Abstract: 2SK3462 K346
    Text: 2SK3462 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3462 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 5.2 ± 0. 2 • 4 V 駆動です。 • オン抵抗が低い。


    Original     		2SK3462 SC-64 k3462 2SK3462 K346 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3468-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		2SK3468-01 MOSFET200303 O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3461 L , 2SK3461(S) Silicon N Channel Power MOS FET Power Switching REJ03G1102-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance RDS (on) = 4.3 mΩ typ. • 4 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004AE-A


    Original     		2SK3461 REJ03G1102-0300 PRSS0004AE-A PRSS0004AE-B PDF