2SD1890 Search Results

2SB1250

Abstract: 2SD1890
Contextual Info: 2SB1250 Power T ransistors 2SB1250 Package Dimensions Silicon PNP Epitaxial Planar Darlington Type U n it : i 4.4max. 10.2max. Power Amplifier Complementary Pair with 2SD1890 2.9inax. • Features • Optimum for 2 5 W hi-fi output 0 3 .1 ± 0 • High DC c u rre n t gain Iife • 5 0 0 0 ~ 3 0 0 0 0

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 100 V 80 V 5 V 6 A 3 A Collector to base voltage

Contextual Info: Power T ransistors 2SB1250 2SB1250 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1890 • Features U n it : mm 4.4m ax. 10.2max._ 5.7m ax. 2.9max. • O ptim u m fo r 25W hi-fi o u tp u t • H igh DC c u r re n t gain

2SB1250

Abstract: 2SD1890 2SD189
Contextual Info: 2SD1890 P o w e r T ra n s is to rs 2SD1890 Silicon NPN Triple-Diffused Planar Darlington Type P ackage Dim ensions Pow er Am plifier C o m plem entary Pair with 2 S B 1 2 5 0 U n i t : Him 4.4max. • Features • Switchable for 25W hi-fi output • High DC current gain Iife : 5000~30000

Contextual Info: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

Darlington pair IC high current

Abstract: 2SD1890 2SB1250 heat sink for TO220
Contextual Info: Power Transistors 2SD1890 2SD1890 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1250 U n i t : Him 4.4max. • Features • Switchable for 25W hi-fi output • High DC current gain Iife : 5000~30000

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

NJ 20 U1 W

Abstract: 2SB1250 2SD1890
Contextual Info: Power Transistors 2SD1890 2S D 1890 Silicon NPN Triple-Diffused Planar Darlington Type • Power Amplifier Complementary Pair with 2SB1250 Package Dimensions ■ Features • S w itchable for 25W hi-fi output • High DC current gain Iif e : 50 0 0 —30000

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SB1250 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit –100 V –80 V –5 V –6 A –3 A Collector to base voltage VCBO Collector to emitter voltage

2SD1485

Abstract: 2SD2340 equivalent audio Darlington 200 W 2SB1154/2SD1705
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Package (No.) Application • V ceo le VcE(sat) Functions (V ) (A) (V ) General-use Darlington Ib (A) (mA) TOP-3(a) (D64) TOP-3F(a) (D67) 50 7 < 0.8 7 700 100 5

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

Contextual Info: Power Transistors 2SB1250 Silicon PNP epitaxial planar type Darlington 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –100 V Collector to emitter voltage VCEO –80 V Emitter to base voltage