2SB1250 Search Results

2SB1250

Abstract: 2SD1890
Contextual Info: 2SB1250 Power T ransistors 2SB1250 Package Dimensions Silicon PNP Epitaxial Planar Darlington Type U n it : i 4.4max. 10.2max. Power Amplifier Complementary Pair with 2SD1890 2.9inax. • Features • Optimum for 2 5 W hi-fi output 0 3 .1 ± 0 • High DC c u rre n t gain Iife • 5 0 0 0 ~ 3 0 0 0 0

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit 100 V 80 V 5 V 6 A 3 A Collector to base voltage

Contextual Info: Power T ransistors 2SB1250 2SB1250 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1890 • Features U n it : mm 4.4m ax. 10.2max._ 5.7m ax. 2.9max. • O ptim u m fo r 25W hi-fi o u tp u t • H igh DC c u r re n t gain

Contextual Info: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm 0.7±0.1 5.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

Darlington pair IC high current

Abstract: 2SD1890 2SB1250 heat sink for TO220
Contextual Info: Power Transistors 2SD1890 2SD1890 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1250 U n i t : Him 4.4max. • Features • Switchable for 25W hi-fi output • High DC current gain Iife : 5000~30000

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SB1250 Silicon PNP epitaxial planar type Darlington Unit: mm 10.0±0.2 4.2±0.2 ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit –100 V –80 V –5 V –6 A –3 A Collector to base voltage VCBO Collector to emitter voltage

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SD1890 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1250 Unit: mm ● ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage

NJ 20 U1 W

Abstract: 2SB1250 2SD1890
Contextual Info: Power Transistors 2SD1890 2S D 1890 Silicon NPN Triple-Diffused Planar Darlington Type • Power Amplifier Complementary Pair with 2SB1250 Package Dimensions ■ Features • S w itchable for 25W hi-fi output • High DC current gain Iif e : 50 0 0 —30000

Contextual Info: Power Transistors 2SB1250 Silicon PNP epitaxial planar type Darlington 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 ● TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –100 V Collector to emitter voltage VCEO –80 V Emitter to base voltage

2SB1250

Abstract: 2SD1890
Contextual Info: Power Transistors 2SB1250 Silicon PNP epitaxial planar type Darlington ● ● • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO –100 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V

2SB1531

Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100

SJD00167CED

Abstract: 2SB0928 2SB0928A 2SB1250 2SD1250 2SD1250A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD2340 equivalent

Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3

2SD2340 equivalent

Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030