2SD1313 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1313 INDUSTRIAL APPLICATIONS Unit in n HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATU R E S : . High Power Dissipation : . High Collector Current : . High Speed Switching : . Low Saturation Voltage :

2SC4542

Abstract: 4509 2SC3303 2sc3153 2sd1314 4522 2SC4068 2SC4536 4517A 2SC2555
Contextual Info: - 192 - SU £ Type No. tt £ Manuf. □— A 2SC 4506 H # SANYO M £ TOSHIBA B a NEC 2SC3789 2SC2551 2SC3209 2SC 4507 ✓ 2SC4106 2SC2553 2SC2518 B HITACHI Ai Ä dr ii FUJITSU fâ T MATSUSHITA 2SC 4508 * 2SC4107 2SC3626 2SC4423 2SC3306 2SC 4510 2SC4424 2SD1313

Contextual Info: TOSHIBA 2SD1313 TOSHIBA TRANSISTOR n w ar SILICON NPN TRIPLE DIFFUSED TYPE nm m r n m w êt n• mm HIGH PO W ER AM PLIFIER APPLICATIONS. HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 20.5MAX. • • • • High Power Dissipation

2-21F1A

Abstract: 2SD1313
Contextual Info: TO SH IBA 2SD1313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. • High Power Dissipation : Pç; = 200W Te = 25°C • High Collector Current : Iç; = 25A (DC)

2SD1313

Contextual Info: 2SD1313 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in tnm HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. FEATURES : . High Power Dissipation . High Collector Current . High Speed Switching Low Saturation Voltage

2SD1313

Abstract: TO-3PL ib3a 2sd131
Contextual Info: Inchange Semiconductor Product Specification 2SD1313 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·High power dissipation ·High collector current ·High speed switching ·Low saturation voltage APPLICATIONS ·High power amplifier applications

Contextual Info: T O S H IB A 2SD1313 2 S D 1 313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH PO W ER AM PLIFIER APPLICATIONS. HIGH PO W ER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 20.5MAX. • • • • High Power Dissipation : Pq = 200W T = 25°C

2SD1313

Contextual Info: Æ àM O SPE C HIGH-VOLTAGE HIGH POWER TRANSISTORS NPN 2SD1313 . designsd for use in high power amplifier,and switching applcation. FEATURES: * High Power Dissipation PD= 200W TC= 25°C * High Collector Current- lc= 25A(DC) * High Speed Switching - 1 ,=0.5 us(Typ) @ lc= 15A

2SD1313

Contextual Info: SavantIC Semiconductor Product Specification 2SD1313 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·High power dissipation ·High collector current ·High speed switching ·Low saturation voltage APPLICATIONS ·High power amplifier applications

2SD1313

Abstract: lt25 25D1313 2-21F1A
Contextual Info: 2SD1313 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. • High Power Dissipation : Pç; = 200W Tc = 25°C • High • High • Low Saturation Voltage : V ç;e (sat) = l*0V (Max.) (Iq = 15A)

2SD1313

Abstract: 2-21F1A
Contextual Info: TO SH IBA 2SD1313 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2 S D 1 313 HIGH POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS • High Power Dissipation : Pç; = 200W Te = 25°C • High • High • Low Saturation Voltage :

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

2SC3498

Abstract: 2SC3499 tr 2sc3280 2SA1301 T03P 2SD1313
Contextual Info: T 0 S HI BA (15 T0-3P (L) P A C K A G E S E R IE S * M A X A tr A UDIO OUT 2SC3280 2SA1301 2SC3281 2SA1302 'c (V) (A) (V) 5 1 2.5 (V) (W) 12 160 120 15 200 55~160 Iß V CE 'C (A) (MHz) (V) (A) <pF) (V) 8 0.8 30 5 1 220/480 10 V CB tf (jus) (MS) - - *1.0

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

PT9847

Abstract: ESM752A ESM952 sm2160 ESM952A PT9785 esm752 idd1313
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE fT ON) Min (HZ) Max toN Max (A) (s) 'CBO r (CE)sat Toper Max (Ohms) Max (°C) Package Style ~ Devices 20 Watts or More, (Cont'd) 5 10 PT8854 PT8854A S G S F 6 6 2 (A)

2SB1039

Abstract: 2SD1309 MP40 2SD1347 2SD1304 2SD1305 2SD1306 2SD1308 2SD1310 2SD1311
Contextual Info: - 244 - Ta=25tC, *EPííTc=25'C m % tt g 2SD1304 tëT LF A 2SD1305 HV LF A 2SD1306 1ST H i 2SD1308 H U LF PA/LS PSW 2SD1309 H S LF PA/LS PSW 2SD1310 LF A/Mut I VcBO VcEQ ice DC) Pe Pe* (V) (V) (A) (W) (W) I ÍCB0 (max) VcB (V) (UH) (min) Í1FE W íl (max)