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Toshiba America Electronic Components 2SA1242-Y(Q) TRANS PNP 20V 5A PW-MOLD
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DigiKey	2SA1242-Y(Q)	Tube			200	1 - 10 - 100 - 1000 $0.3528 10000 $0.3528	Buy Now
Toshiba America Electronic Components 2SA1242Y
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Bristol Electronics	2SA1242Y		954			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SA1242Y		763			1 $1.9 10 $1.9 100 $0.95 1000 $0.76 10000 $0.76	Buy Now
	2SA1242Y		53			1 $1.65 10 $1.32 100 $0.825 1000 $0.825 10000 $0.825	Buy Now
Toshiba America Electronic Components 2SA1242-Y
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Bristol Electronics	2SA1242-Y		67			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others 2SA1242 TRANSISTOR,BJT,PNP,20V V(BR)CEO,5A I(C),TO-251AA
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Quest Components	2SA1242		2			1 $5.85 10 $3.9 100 $3.9 1000 $3.9 10000 $3.9	Buy Now

2SA1242 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA1242	Toshiba	PNP transistor	Original	PDF
2SA1242	Toshiba	TRANS GP BJT PNP 20V 5A 3(2-7B1A)	Original	PDF
2SA1242	Various Russian Datasheets	Silicon PNP Transistor	Original	PDF
2SA1242	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2SA1242	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1242	Unknown	Silicon PNP Transistor	Scan	PDF
2SA1242	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1242	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1242	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1242	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1242	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SA1242	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SA1242	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SA1242	Toshiba	Silicon PNP transistor for strobe flash and medium power amplifier applications	Scan	PDF

2SA1242	Toshiba	Silicon PNP Transistor	Scan	PDF
2SA1242(2-7B1A)	Toshiba	2SA1242 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7B1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1242(2-7B2A)	Toshiba	2SA1242 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1242(2-7J1A)	Toshiba	2SA1242 - TRANSISTOR 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-7J1A, 3 PIN, BIP General Purpose Small Signal	Original	PDF
2SA1242O	Toshiba	TRANS GP BJT PNP 20V 5A 3(2-7B1A)	Original	PDF
2SA1242-O	Toshiba	2SA1242 - TRANSISTOR SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF

2SA1242 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SA1242 Abstract: A1242 Text: 2SA1242 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 20070701-JA 2SA1242 A1242
A1242 Abstract: 2SA1242 transistor A1242 Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 A1242 2SA1242 transistor A1242
transistor A1242 Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type Ft Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 transistor A1242 TOSHIBA Transistor Silicon PNP Epitaxial Type Ft
Untitled Abstract: No abstract text available Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-252 FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)	Original	PDF	O-252 2SA1242 O-252 -100uA,
2SA1242 Abstract: A1242 Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 2SA1242 A1242
transistor A1242 Abstract: 2SA1242 A1242 Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 transistor A1242 2SA1242 A1242
Untitled Abstract: No abstract text available Text: 2SA1242 PNP TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 O-251/TO-252-2L O-251 O-252-2L -100uA,
A1242 Abstract: 2SA1242 Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Unit: mm Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 A1242 2SA1242
A1242 Abstract: 2SA1242 Text: 2SA1242 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 A1242 2SA1242
2SA1242 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE linearity 123 1 123 1. BASE : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)	Original	PDF	O-251/252 2SA1242 O-251 O-252-2L -100uA, 2SA1242
2SA1242 Abstract: A1242 Text: 2SA1242 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1242 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE の直線性が良好です。 : hFE (1) = 100~320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (最小) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 2SA1242 A1242
transistor A1242 Abstract: 2SA1242 A1242 Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 transistor A1242 2SA1242 A1242
transistor A1242 Abstract: 2SA1242 A1242 Text: 2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A)	Original	PDF	2SA1242 transistor A1242 2SA1242 A1242

Untitled Abstract: No abstract text available Text: 2SA1242 TOSHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = -2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = -2 V , IC = -4 A ) Low Collector Saturation Voltage	OCR Scan	PDF	2SA1242
Untitled Abstract: No abstract text available Text: 2SA1242 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. 0.6 ±0.15 0,95MAX q t q 0.6 M AX 5.210.2, J hFE = 100-320 (VCe = - 2 V , IC = -0 .5 A ) hjrE = 70 (Min.) (VCE= - 2 V , 1 = - 4 A)	OCR Scan	PDF	2SA1242 WIDTH-10ms
SA1242 Abstract: 2SA1242 Text: 2SA1242 TOSHIBA 2 S A 1 242 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • hFE = 100-320 (Vce = —2 V, IC = -0 .5 A) hFE = 70 (Min.) (VCE = —2 V, IC = - 4 A) Low Collector Saturation Voltage	OCR Scan	PDF	2SA1242 SA1242 2SA1242
Untitled Abstract: No abstract text available Text: 2SA1242 TO SHIBA 2 S A 1 242 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS M E D IU M POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vce = -2 V , Ic = -0.5A ) hFE = 70 (Min.) (VCE = _2V , IC = -4 A ) Low Collector Saturation Voltage	OCR Scan	PDF	2SA1242
S1854 Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001 Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686	OCR Scan	PDF	2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
2SA1242 Abstract: No abstract text available Text: 2SA1242 TO SH IBA 2 S A 1 242 T O S H IB A TRA N SIST O R STR O BE FLASH A PPLIC A TIO N S SILICON PN P E P IT A X IA L T Y PE PCT PRO CESS M E D IU M P O W E R A M P L IF IE R A PPLIC A T IO N S hFE = 100-320 (V c e = - 2 V , IQ = -0 .5 A) hFE = 70 (Min.) (VCE = - 2 V , IC = - 4 A )	OCR Scan	PDF	2SA1242 2SA1242
2sa1229 Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A Text: - 26 - Ta=25<C. EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242	OCR Scan	PDF	2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 2SC3116 O-126) 2SA1248 2SC3117 2sa1229 2SA1227 SA1244 2SA1224 2SC3115 2sC3L
2SA1242 Abstract: A1242 transistor A1242 Text: 2SA1242 TO SH IBA 2 S A 1 242 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS hFE = 100-320 (Vc e = —2 V, IC = -0 .5 A) hFE = 70 (Min.) (VCE = —2 V, IC = - 4 A) Low Collector Saturation Voltage	OCR Scan	PDF	2SA1242 2SA1242 A1242 transistor A1242
Untitled Abstract: No abstract text available Text: 2SA1242 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm STROBE FLASH APPLICATIO N S. MEDIUM POW ER AM PLIFIER APPLICATIO N S. • • • • hFE = 100~320(V cE :=-2 V , I q = —0.5A) hpE = 70(M in.)(VcE = -2 V , I c = -4 A ) Low Collector Saturation Voltage	OCR Scan	PDF	2SA1242 50x60x0
2SA1242 Abstract: No abstract text available Text: TOSHIBA TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL 2 S A 1 242 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1242) Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. . • • hFE = 100-320 (Vce = —2V, IC= - 0.5A) hFE = 70 (Min.) (V ce = - 2V, 1q = - 4A)	OCR Scan	PDF	2SA1242 2SA1242) 2SA1242

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2SA1242 Datasheets (37)

2SA1242 Datasheets Context Search

2SA1242

A1242

transistor A1242

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2SA1242

transistor A1242

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A1242

A1242

2SA1242

2SA1242

transistor A1242

transistor A1242

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SA1242

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S1854

2SA1242

2sa1229

2SA1242

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2SA1242