2SC35 Search Results

Contextual Info: 2SC3547A silicqn npn epitaxial planar type transistor TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • Transition Frequency is High and Dependent on C urrent Excellently. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SC3551

Abstract: 2SC355
Contextual Info: Inchange Semiconductor Product Specification 2SC3551 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters

2SC3595

Abstract: T0126
Contextual Info: Ordering num ber: EN1756B 2SC3595 NPN Epitaxial Planar Silicon Transistor Ultrahigh-Defmition CRT Display Applications Applications • Ultrahigh-deflnition CRT display. • Video output driver. • Wideband amplifiers. Features • High fp: fr typ = 2.0GHz.

A1402

Abstract: 25CC 2SA1402 T0126
Contextual Info: [~Ordering num ber: EN 1761B 2SA1402/2SC3596 PNP/NPN Epitaxial Planar Silicon Transistors U ltrahigh-D efinition CRT D isplay Video Output A pplications A p p licatio n s •Ultrahigh-definition CRT display. • Video output. • Color TV chroma output. • Wide-band amp.

IC TC 3588

Abstract: 2SC3588 3588-Z
Contextual Info: '> '; = !> h =7 S ilic o n 7. 9 T r a n sisto r s 2SC3588,3588-Z N P N = ¡Ü jâ ^ Ü Ü iG E 7 .4 « "j > 7 'M « O iiiffiT -to V CEo = 4 0 0 V 0 3 l / ^ ^ l â ï l ] l : Œ ^ > h § v > 0 VCE sat — 0 . 5 V O X 'f t f ^ l . O ¡us O 2 S A 1 4 0 0 , 1 40 0-Z t n > 7 ° 'J / > ? 'J T f ë f f l T - ë i t o

2SC3507

Contextual Info: Power T ransistors 2SC3507 hTBEBiE DDlhHab Ü57 2SC3507 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit : mm • Features . 15.5max. 6.9min. • High speed switching • High collector-base voltage VCbo

2SC3507

Contextual Info: Inchange Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS

2sC3559

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3559 INDUSTRIAL APPLICATIONS U n i t in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES: . Excellent Switching Times Iç=0.8A X 2C O : t r=l •0//s ( M a x . ), t f = 1. 0//s ( M a x . )

2SC3559

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3559 SWITCHING REGULATOR AND HIGH VOLTAGE INDUSTRIAL APPLICATIONS Unit in mm SWITCHING APPLICATIONS. J.0.3 MAX. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES : . Excellent Switching Times lç=0.8A : tr=l. 0«s (Max. ), tf=l. O/is (Max. )

smd marking hm

Abstract: 2SC3547B
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3547B SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 1 Transition frequency is high and dependent on current excellently. 0.55 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base

2SC3513

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC3513 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25

2SC3588

Abstract: 2SA1400-Z 2SC3588-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3588-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3588-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V • Complement to 2SA1400-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Contextual Info: SMD Type Product specification 2SA1384 Features High Voltage: VCBO = -300V , VCEO = -300V Low Saturation Voltage: VCE sat = -0.5V (max) Small Collector Output Capacitance: Cob = 6pF PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SC3515

Contextual Info: Transistors SMD Type Product specification 2SC3588-Z +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1 +0.15

2SC3557

Contextual Info: SavantIC Semiconductor Product Specification 2SC3557 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SA1388

Abstract: 2SC3540
Contextual Info: SavantIC Semiconductor Product Specification 2SA1388 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complementary to 2SC3540 · APPLICATIONS ·High current switching applications

2SC3540

Abstract: 2SA1388
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1388 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@ IC= -3A ·High Switching Speed ·Complement to Type 2SC3540 APPLICATIONS ·Designed for high current switching applications.

Contextual Info: TO SH IB A 2SC3547A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3547A TV TUNER, UHF OSCILLATOR APPLICATIONS COMMON COLLECTOR • Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO

C3503D

Abstract: 2sc3503 c3503e C3503C 2SC3503D 2SC3503F c3503-d 2sc3503 spice
Contextual Info: 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V

2SC3597-SPICE

Abstract: 2SC3597 transistor mje 170
Contextual Info: 2SC3597 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 40f NF 1 IKF 700m NE 2 NR 1 IKR 210m NC 2 IRB 1.8m RE 155m XTB XTI 3 VJE 700m TF 140p VTF 5 PTF VJC 500m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm default V sec

Contextual Info: Transistors IC SMD Type Product specification 2SC3513 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25

Contextual Info: Transistors IC SMD Type Product specification 2SC3585 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 NF 1.8 dB TYP. @f = 2.0 GHz 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1

EN1609D

Contextual Info: Ordering number:EN1609D NPN Epitaxial Planar Silicon Transistor 2SC3591 High-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Fast switching speed. · Low saturation voltage. · Adoption of MBIT process. unit:mm

2SC3519

Abstract: 2SC3519A transistor 2sc3519 2SA1386
Contextual Info: 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1386/A VCB= V IEBO 15 A V(BR)CEO µA 100max VEB=5V 160min IC=25mA 180min V 4 A hFE VCE=4V, IC=5A 50min∗ PC 130(Tc=25°C) W VCE(sat) IC=5A, IB=0.5A 2.0max V Tj 150 °C fT VCE=12V, IE=–2A