2SC3507
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS
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2SC3507
2SC3507
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C
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2002/95/EC)
2SC3507
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2SC3507
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC3507 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications
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2SC3507
2SC3507
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2SC3507
Abstract: No abstract text available
Text: Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 1000 V VCES
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2SC3507
2SC3507
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2SC3507
Abstract: No abstract text available
Text: JMnic Product Specification 2SC3507 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High-speed switching ・High collector-base voltage VCBO ・Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ・For high-speed switching applications
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2SC3507
2SC3507
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C
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2SC3507
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2SC3507
Abstract: *c3507
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)
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2SC3507
2SC3507
*c3507
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2SC3507
Abstract: IC1060
Text: Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 0.7 15.0±0.3 21.0±0.5 16.2±0.5 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2SC3507
2SC3507
IC1060
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2sC3507 transistor
Abstract: 2SC3507
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short)
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2SC3507
2sC3507 transistor
2SC3507
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2SC3507
Abstract: No abstract text available
Text: Power Transistors 2SC3507 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features 21.0±0.5 16.2±0.5 (3.5) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Parameter
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2SC3507
2SC3507
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 5.0±0.2 (0.7) 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)
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2SC3507
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SB1632
Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)
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r0-220
-220F
O-220E
O-220D
2sd1274Ã
2sd1680*
2sc4986
2SC3403
2SC3825
2SC2841
2SB1632
2sc3211
2sc3795
2sc3743
2SC2841
2SC3171
2SC3210
2SC3527
2SC3528
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2SC4290A
Abstract: 2SC4333 j 4310 nec 4312 2SC3586 2SC3153 2SC3997 4303A 2SC3536 2SC3535
Text: - m tt % Type No. 2SC 4290 y H £ 2SC 4291 X h n 2SC 4292 , = # 2SC 4293 > = & 2SC 4294 H # 2SC 4295 n —A 2SC 4296 « Manuf. ^ yy*ry = * SANYO 2SC3997 Jï TOSHIBA B R NEC B ÎL HITACHI * ± FU JIT S U a fó T MATSUSHITA 2SC4290A 2SD1730 2SD1731 2SC4291 2SM73D
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2SC3997
2SC4290A
2SD1730
ZSC4Z91
2SD1731
2SC4293
2SD1971
2SC4423
2SC4290A
2SC4333
j 4310
nec 4312
2SC3586
2SC3153
4303A
2SC3536
2SC3535
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Toshiba 355-1
Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
Text: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »
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2SC4427
2SC3657
2SC3322
2SC3506
2SC4428
2SD1431
2SC3507
2SC4429
2SD1433
2SC3258
Toshiba 355-1
2SC3555
3563
2SC351
2SC4158
2SC3531
2sc3153
2SC3170
NEC 3552
2SC3556
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X9116WM8I-2.7T1
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type
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-220F
O-220E
O-220D
Z74/MB
2SC3210
2SC3171
2SC3527
2SC3285
2SC3506
2SC5156
X9116WM8I-2.7T1
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2SC5283
Abstract: 2SC5157
Text: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)
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O-220F
O-220E
T0220D
2SD1274/A6
2SC3403
2SC3825
2SC3210
2SC3171
2SC3527
2SC3850
2SC5283
2SC5157
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2SC3500
Abstract: 2SC3493 2SC35001 2SC3511 2SA1386 2SC3520 2SC3531 2SC3536 2SC3495 2SC3494
Text: - 160 - Ta=25°C. *EP(ÌTc=25‘ C m % t± £ m 2SC3493 B \L VHF A/TV VHF 2SC3494 B ÌL FM RF/IF A 2SC3495 ìé LF A M Vc b o VcEO ICCDC) Pc Pc* IcBO (V) (V) (A) (W) (W) (/¿A) 15 12 % ft 4# ti (Ta=25tC ) [*EP(Ìtyp hp *CB (V) 0.02 0.15 0. 3 12 \ ni aA/
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2SC3493
2SC3494
2SC3495
2SC3496
2SC3496A
2SC3500O)
800MHz
2SC3501
2SA1383
O-220ABffi
2SC3500
2SC35001
2SC3511
2SA1386
2SC3520
2SC3531
2SC3536
2SC3495
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2SC5072
Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Text: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679
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2SC4181
2SD1823
2SD2351
2SC4443
2SC4176
2SD1977
2SC4700
2SC4523
2SD1412
2SD1747
2SC5072
2SC4698
4685
4686
2SC470-3
2SC4703
4670K
2SC4001
2SC4176
2SC4443
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SC3824
Abstract: 2SC4359
Text: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D
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T0-220
O-220F
O-220E
O-220D
2SD1274/A6
2SD1680*
A2SC4986
2SC4687
2SC4621
2SC3872
2SC3824
2SC4359
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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