2SB595 Search Results

2SD525

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio

2sb595

Abstract: 2sb595o 2SB595-O transistor 2sd525
Contextual Info: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.

transistor 2sd525

Abstract: 2SD525
Contextual Info: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.

2SB595

Abstract: 2SD525 AC75
Contextual Info: TO SH IBA 2SB595 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • • SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 High Breakdown Voltage : V qeo = —100V Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) Complementary to 2SD525.

2SB595

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SB595 Features • • PNP Silicon Power Transistors With TO-220 package Power Amplifier applications Maximum Ratings Symbol V CEO V CBO

ce50a

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD525 Features • • • • • Silicon NPN triple diffused type High breakdown voltage Low Collector saturation voltage Complementary to 2SB595

2SD525

Abstract: 2SB595
Contextual Info: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

2SD525

Abstract: 2SB595 NIC Components 2SD525
Contextual Info: Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ・Power amplifier applications

2SB595

Abstract: 2SD525 transistor 2sd525
Contextual Info: 2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SB595

Abstract: 2SD525
Contextual Info: 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2sb595

Abstract: 2SD525 100v pnp to220c
Contextual Info: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ·Power amplifier applications

Nec K 872

Abstract: 2SA1184 2SB1306 2SB1479 2SA1015 2SB873 2SB1086 2SB548 2SB1480 2sb601
Contextual Info: 55 - s « T y p e No. tt € Manuf. m = SANYO JÎÏ TOSHIBA m a NEC ÍL S HITACHI Ä ± àfi F U JITSU fâ T MATSUS H I T A ^ ü MITSUB I S H I □ — A ROHM 2 SB S58 ÎL 2SB824 2SB596 2SB703 2SB942 2SB1334 2SB 859 îl 2SB920 2SB595 2SB703A 2SB942A 2SA1634

2SD525

Contextual Info: 2SD525 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. jZ Í3 .6 ± 0 .2 FEATURES: • High Breakdown Voltage : VCEO=100V ■ Low Collector Saturation Voltage : VCE sat =2.0V(Max.) • Complementary to 2SB595. ■ Recommended for 30W High Fidelity Audio

transistor 2sd525

Abstract: 2SD525 2SB595
Contextual Info: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : V qe (sat) “ 2.0V (Max.) Complementary to 2SB595. Recommend for 30W High Fidelity Audio Frequency Amplifier

2SB595

Abstract: transistor 2SB595 transistor 2sd525 2SD525
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525

2SB595

Abstract: 2SD525
Contextual Info: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS

2SB595

Abstract: 2SD525
Contextual Info: JMnic Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ・Power amplifier applications

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

Contextual Info: T ^ H T B T r r m t R r r E / o H 9097250 TOSHIBA Sh ï o j - D T ^ TEH7250 D007714 S DISCRETE/OPTO> SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. 10.3MAX. 0S.6±:O .Z FEATURES: • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE(sat =2.0V(Max.)