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    2SD525 Search Results

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    2SD525 Price and Stock

    JRH Electronics DW-14-12-S-D-525

    STACKING BOARD CONNECTOR, DW SER
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    DigiKey DW-14-12-S-D-525 Bulk 1
    • 1 $10.82
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    • 100 $8.6546
    • 1000 $6.67274
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    Samtec Inc DW-14-12-S-D-525

    CONN HDR 28POS 0.1 STACK T/H
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    DigiKey DW-14-12-S-D-525 Bulk 1
    • 1 $6.91
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    Avnet Americas DW-14-12-S-D-525 Bulk 1
    • 1 $5.65
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    • 100 $4.28
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    Mouser Electronics DW-14-12-S-D-525
    • 1 $5.65
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    • 1000 $3.04
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    Newark DW-14-12-S-D-525 Bulk 1
    • 1 $6.67
    • 10 $6.4
    • 100 $5.28
    • 1000 $3.89
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    Master Electronics DW-14-12-S-D-525
    • 1 -
    • 10 $6.83
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    • 1000 $3.39
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    Sager DW-14-12-S-D-525 442 1
    • 1 $5.95
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    • 100 $4.76
    • 1000 $3.3
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    Samtec Inc ESQT-110-02-S-D-525

    CONN SOCKET 20POS 0.079 GOLD PCB
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    DigiKey ESQT-110-02-S-D-525 Bulk 1
    • 1 $6.26
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    Avnet Americas ESQT-110-02-S-D-525 Bulk 1
    • 1 $6.53
    • 10 $6.04
    • 100 $4.06
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    Mouser Electronics ESQT-110-02-S-D-525
    • 1 $5.29
    • 10 $4.83
    • 100 $3.57
    • 1000 $2.23
    • 10000 $1.69
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    Newark ESQT-110-02-S-D-525 Bulk 1
    • 1 $7.35
    • 10 $7.35
    • 100 $4.8
    • 1000 $3.65
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    Master Electronics ESQT-110-02-S-D-525
    • 1 -
    • 10 $7.88
    • 100 $4.54
    • 1000 $2.84
    • 10000 $1.79
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    Sager ESQT-110-02-S-D-525 1
    • 1 $6.53
    • 10 $6.04
    • 100 $4.06
    • 1000 $3.58
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    Samtec Inc MTSW-112-12-S-D-525-RA

    Conn Unshrouded Header HDR 24 POS 2.54mm Solder RA Thru-Hole - Bulk (Alt: MTSW-112-12-S-D-52)
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    Master Electronics MTSW-112-12-S-D-525-RA
    • 1 $6.39
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    • 100 $3.63
    • 1000 $3.51
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    Sager MTSW-112-12-S-D-525-RA
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    Samtec Inc ESQT-108-02-S-D-525

    Conn Elevated Socket SKT 16 POS 2mm Solder ST Thru-Hole - Bulk (Alt: ESQT-108-02-S-D-52)
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    Master Electronics ESQT-108-02-S-D-525
    • 1 -
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    • 100 $3.24
    • 1000 $3.09
    • 10000 $2.92
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    Sager ESQT-108-02-S-D-525
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    2SD525 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD525 Micro Commercial Components NPN Silicon Power Transistor Original PDF
    2SD525 Wing Shing Computer Components LOW FREQUENCY POWER AMPLIFIER(NPN EPITAXIAL) Original PDF
    2SD525 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD525 Mospec 5 A/100 V NPN Power Transistor Scan PDF
    2SD525 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD525 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD525 Unknown Scan PDF
    2SD525 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD525 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD525 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD525 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD525 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD525 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD525 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD525 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD525 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD525 Unknown Cross Reference Datasheet Scan PDF
    2SD525 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD525 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SD525 Toshiba Japanese Transistor Data Book Scan PDF

    2SD525 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ce50a

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD525 Features • • • • • Silicon NPN triple diffused type High breakdown voltage Low Collector saturation voltage Complementary to 2SB595


    Original
    PDF 2SD525 2SB595 O-220 ce50a

    2SD525

    Abstract: 2SB595
    Text: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original
    PDF 2SD525 O-220C 2SB595 2SD525 2SB595

    2SD525

    Abstract: 2SB595 NIC Components 2SD525
    Text: Product Specification www.jmnic.com 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ・Power amplifier applications


    Original
    PDF 2SD525 O-220C 2SB595 2SD525 2SB595 NIC Components 2SD525

    2SB595

    Abstract: 2SD525 transistor 2sd525
    Text: 2SB595 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD525 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    PDF 2SB595 O-220 2SD525 -100V 2SB595 2SD525 transistor 2sd525

    2SB595

    Abstract: 2SD525
    Text: 2SD525 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB595 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original
    PDF 2SD525 O-220 2SB595 2SB595 2SD525

    2sb595

    Abstract: 2SD525 100v pnp to220c
    Text: SavantIC Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD525 ·High breakdown voltage :VCEO=-100V ·Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ·Power amplifier applications


    Original
    PDF 2SB595 O-220C 2SD525 -100V -100V; 2sb595 2SD525 100v pnp to220c

    2SD525

    Abstract: 2SB595
    Text: Inchange Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB595 ・High breakdown voltage :VCEO=100V ・Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS


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    PDF 2SD525 O-220C 2SB595 2SD525 2SB595

    2SB595

    Abstract: transistor 2SB595 transistor 2sd525 2SD525
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB595 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -2.0(V)(Max)@IC= -4A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·Complement to Type 2SD525


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    PDF 2SB595 -100V 2SD525 -100V; 2SB595 transistor 2SB595 transistor 2sd525 2SD525

    2SB595

    Abstract: 2SD525
    Text: Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS


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    PDF 2SB595 O-220C 2SD525 -100V 2SB595 2SD525

    2SB595

    Abstract: 2SD525
    Text: JMnic Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE sat =-2.0V(Max) APPLICATIONS ・Power amplifier applications


    Original
    PDF 2SB595 O-220C 2SD525 -100V -100V; 2SB595 2SD525

    2Sc945 equivalent

    Abstract: 2sc945 pinout 2SC945 DATASHEET 78l05 sop 2SC945 2SD525 78L05 SM6780AS equivalent 2sc945 BATTERY CHARGER cutoff
    Text: SM6780AS Ni-Cd/Ni-MH Battery Charger IC NIPPON PRECISION CIRCUITS INC. OVERVIEW The SM6780AS is a quick charge control IC for Nickel-Cadmium Ni-Cd and Nickel Metal Hydride (Ni-MH) rechargeable batteries. It supports quick charge, supplemental and pulse trickle charging modes. The charging


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    PDF SM6780AS SM6780AS NC9918AE CIRCUITS--11 2Sc945 equivalent 2sc945 pinout 2SC945 DATASHEET 78l05 sop 2SC945 2SD525 78L05 equivalent 2sc945 BATTERY CHARGER cutoff

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original
    PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD525

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio


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    PDF 2SD525 2SB595. 2SD525

    transistor 2sd525

    Abstract: 2SD525
    Text: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.


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    PDF 2SD525 2SB595. transistor 2sd525 2SD525

    2SB595

    Abstract: 2SD525 AC75
    Text: TO SH IBA 2SB595 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • • SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 High Breakdown Voltage : V qeo = —100V Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) Complementary to 2SD525.


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    PDF 2SB595 2SD525. 2SD525 AC75

    2SB595

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX


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    PDF 2SB595 gQ--100V 2SD525. 2SB595

    2SD2061

    Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
    Text: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061


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    PDF 2SD121 2SD122 2SD123 2SD124 2SC1398 2SD1266A 2SD1264 2SD525 2SD526 2SD2081 2SD2061 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783

    2SD525

    Abstract: No abstract text available
    Text: 2SD525 SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. jZ Í3 .6 ± 0 .2 FEATURES: • High Breakdown Voltage : VCEO=100V ■ Low Collector Saturation Voltage : VCE sat =2.0V(Max.) • Complementary to 2SB595. ■ Recommended for 30W High Fidelity Audio


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    PDF 2SD525 2SB595. -55VL50 2SD525

    transistor 2sd525

    Abstract: 2SD525 2SB595
    Text: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : V qe (sat) “ 2.0V (Max.) Complementary to 2SB595. Recommend for 30W High Fidelity Audio Frequency Amplifier


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    PDF 2SD525 2SB595. transistor 2sd525 2SD525 2SB595

    2SD525

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS U nit in mm POW ER AM PLIFIER APPLICATIONS. • • • • High Breakdown Voltage : V c e o = —100V Low Collector-Emitter Saturation Voltage : VCE(sat)~ —2.0V (Max.) Complementary to 2SD525. Recommended for 30W High-Fidelity Audio Frequency Amplifier


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    PDF --100V 2SD525. 2SD525

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


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    PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


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    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346

    Untitled

    Abstract: No abstract text available
    Text: T ^ H T B T r r m t R r r E / o H 9097250 TOSHIBA Sh ï o j - D T ^ TEH7250 D007714 S DISCRETE/OPTO> SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm POWER AMPLIFIER APPLICATIONS. 10.3MAX. 0S.6±:O .Z FEATURES: • High Breakdown Voltage : VCEO=100V • Low Collector Saturation Voltage : VCE(sat =2.0V(Max.)


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    PDF TEH7250 D007714 2SB595.