2SA1204 Search Results

2SA1204

Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier

2SA1204

Abstract: 2SC2884 A1204 TA155
Contextual Info: TOSHIBA 2SA1204 2 S A 1 204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1204 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 4.6 m a x . 1.7 MAX. FEATURES: Q4±a05 . 3 = . High DC Current Gain : hFE=1 0 0 ~ 3 2 0 . Suitable for Output Stage of 1 Watts Amplifier . PC= 1 ~ 2 W Mounted on Ceramic Substrate

2SA1204

Abstract: power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: TO SHIBA 2SA1204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 SA 1 2 0 4 AUDIO FREQUENCY AM PLIFIER APPLICATIONS Unit in mm 1 .6 M A X . —J- - 4 .6 M A X . High DC Current Gain : 1if e = 100~320 1 .7 M A X . 0 .4 + 0 .0 5 i Suitable for Output Stage of 1 Watts Amplifier

Contextual Info: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL DATA 2 SA1204 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1204) Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • • High DO Current Gain : —100—320 Suitable for Output Stage of 1 Watts Amplifier

2SA1204

Abstract: 2SC2884
Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)

2SC2884

Contextual Info: 2SC2884 0.8A, 35V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package Complementary to 2SA1204 High DC Current Gain 4 1 2 3 A CLASSIFICATION OF hFE

2SA1204

Abstract: 2SC2884
Contextual Info: 2SA1204 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1204 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプ出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

2SA1204

Abstract: 2SC2884
Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SA1204

Abstract: 2SC2884 A1204
Contextual Info: 2SA1204 TOSHIBA 2 S A 1 204 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY A M PLIFIER APPLICATIONS High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)

A1204

Abstract: 2SA1204 2SC2884
Contextual Info: 2SA1204 TOSHIBA 2 S A 1 204 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY A M PLIFIER APPLICATIONS High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: 2SA1204 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1204 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプ出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

power transistor audio amplifier 500 watts

Abstract: 2SA1204 2SC2884
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SC2884 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SA1204 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1204 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2884 z Small Flat Package z Audio Frequency Amplifier Application z High DC Current Gain

ta31087

Contextual Info: REGULATOR AND PERIPHERAL TENTATIVE DATA SYSTEM REGULATOR 1C FOR CORDLESS TELEPHONE 2 independent regulators and m icrocom puter pow er on a chip, very suitable fo r a handset o f cordless telephone. FEATURES • W atch-dog-tim er fun ction • 2 independent regulators

Contextual Info: POWER M INI PACKAGE S E R IES ^ ! SOT-89 a.î'VîYw; 'S T T ITT Application Pc * Mounted on ceramic substratq o f 250mmJ x 0.8mm v CEO >C Pc PC* V) (A) (W) (W) 1.5 0.5 1 h FE Type No. NPN PNP f t TYP. v CE(sat) M AX- V CE >C 'c 'b V CE •e (V) Im A l

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)