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    2SA1213 Search Results

    2SA1213 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2SA1213 Price and Stock

    Comchip Technology Corporation Ltd 2SA1213Y-HF

    TRANS PNP 50V 2A SOT-89-3L
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    DigiKey 2SA1213Y-HF Reel 1,000
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    Mouser Electronics 2SA1213Y-HF
    • 1 $0.42
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    NAC 2SA1213Y-HF 1,000
    • 1 $0.18
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    • 1000 $0.111
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    Comchip Technology Corporation Ltd 2SA1213O-HF

    TRANS PNP 50V 2A SOT-89-3L
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    DigiKey 2SA1213O-HF Reel 1,000
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    • 10000 $0.10849
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    Mouser Electronics 2SA1213O-HF
    • 1 $0.42
    • 10 $0.342
    • 100 $0.233
    • 1000 $0.13
    • 10000 $0.105
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    NAC 2SA1213O-HF 1,000
    • 1 $0.18
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    • 1000 $0.111
    • 10000 $0.103
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    Micro Commercial Components 2SA1213-O-AP

    TRANS PNP 50V 2A SOT-89
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    DigiKey 2SA1213-O-AP Ammo Pack
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    Toshiba America Electronic Components 2SA1213-Y(TE12L,ZC

    Trans GP BJT PNP 50V 2A 1000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SA1213-Y(TE12L,ZC 5,000 5,000
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    2SA1213-Y(TE12L,ZC 1,525 451
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    2SA1213-Y(TE12L,ZC 1,029 321
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    Arrow Electronics 2SA1213-Y(TE12L,ZC 5,000 16 Weeks 5,000
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    Quest Components 2SA1213-Y(TE12L,ZC 1,220
    • 1 $0.97
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    • 1000 $0.291
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    EBV Elektronik 2SA1213-Y(TE12L,ZC 17 Weeks 1,000
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    Toshiba America Electronic Components 2SA1213-YTE12LC

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    Bristol Electronics 2SA1213-YTE12LC 60 6
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    2SA1213 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1213 Kexin Power Switching Applications Original PDF
    2SA1213 Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original PDF
    2SA1213 Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original PDF
    2SA1213 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1213 TY Semiconductor Power Switching Applications - SOT-89 Original PDF
    2SA1213 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1213 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1213 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1213 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1213 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1213 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1213 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1213 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1213 Toshiba SOT-89 Transistors Scan PDF
    2SA1213 Toshiba Silicon PNP transistor for power switching and power amplifier applications Scan PDF
    2SA1213 Zetex Semiconductors High Gain Transistors / High Performance Switching Transistors / Darlingtons Scan PDF
    2SA1213O Micro Commercial Components TRANS GP BJT PNP 50V 2A 3SOT-89 Original PDF
    2SA1213O Toshiba TRANS GP BJT PNP 50V 2A 3(2-5K1A) Original PDF
    2SA1213-O Toshiba 2SA1213 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1213-O-AP Micro Commercial Components TRANSISTOR TO-92 MOD Original PDF

    2SA1213 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    2SA1213-O

    Abstract: No abstract text available
    Text: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)


    Original     		2SA1213 2SA1213-O 2SA1213-Y PDF

    2SA1213

    Abstract: 2SC2873
    Text: 2SA1213 TOSHIBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS Low Saturation Voltage : VCE (sat)= —0.5V (Max.) (IC = —1A) High Speed Switching Time: tstg=1.0/«s(Typ.)


    OCR Scan     		2SA1213 2SC2873 2SA1213 2SC2873 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage


    Original     		OT-89-3L OT-89-3L 2SA1213 2SC2873 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR（PNP ） ＳＯＴ－８９ FEATURES Power dissipation PCM : 0.5 W （Tamb=25℃） Collector current ICM: -2 A Collector-base voltage V BR CBO : -50


    Original     		OT-89 2SA1213 OT-89-3L 500TYP 060TYP PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC 2SA1213-O TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		2SA1213-O 2SA1213-Y PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1213 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate)


    Original     		2SA1213 OT-89 PDF

    PNP marking NY sot-223

    Abstract: No abstract text available
    Text: SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 W (Tamb=25℃) 1. BASE A 2. COLLECTOR1 2 V 3 3. EMITTER Operating and storage junction temperature range


    Original     		OT-89 2SA1213 OT-89 -10mA PNP marking NY sot-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1213 2SC2873 PDF

    2SA1213

    Abstract: 2SC2873
    Text: 2SA1213 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1213 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ･エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original     		2SA1213 2SC2873 SC-62 2SA1213 2SC2873 PDF

    2SA1213

    Abstract: No abstract text available
    Text: 2SA1213 2SA1213 TRANSISTOR PNP SOT-89 FEATURES Power dissipation PCM : 0.5 Collector current ICM : -2 Collector-base voltage V(BR)CBO : -50 W (Tamb=25℃) 1. BASE A 2. COLLECTOR1 2 V 3 3. EMITTER Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		2SA1213 OT-89 -10mA 2SA1213 PDF

    2SA1213-O

    Abstract: No abstract text available
    Text: MCC 2SA1213-O TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features • x x x x • • • PNP Silicon Epitaxial Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		2SA1213-O 2SA1213-Y 2SA1213-O PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • 2SA1213   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)


    Original     		2SA1213 OT-89 250mm2 05Adc) 10Vdc, PDF

    2SA1213

    Abstract: pnp hfe 120-240 2SA1213Y 2SA1213-O
    Text: 2SA1213 MCC TM Micro Commercial Components Features x x x x x 2SA1213-O   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)


    Original     		2SA1213 2SA1213-O 2SA1213-Y 05Adc) 10Vdc, 2SA1213 pnp hfe 120-240 2SA1213Y PDF

    2SA1213Y

    Abstract: 2SA1213-O
    Text: MCC TM Micro Commercial Components 2SA1213-O   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1213-Y Features x x x x x PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A)


    Original     		2SA1213-O 2SA1213-Y 2SA1213Y PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage


    Original     		OT-89-3L OT-89-3L 2SA1213 2SC2873 -10mA -500mA -50mA PDF

    2SC2873Y

    Abstract: Transistor 2SC2873 2sc2873
    Text: 2SC2873 2SC2873Y SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * LOW SATURATION VOLTAGE. * FAST SW ITCHING. * COMPLEMENTARY TYPE - 2SA1213. PARTMARKING DETAILS - 2SC2873 - M Y 2SC2873Y - M O ABSOLUTE MAXIMUM RATINGS 2SC2873 2SC2873Y SYMBOL PARAMETER


    OCR Scan     		2SA1213. 2SC2873 2SC2873Y 2SC2873Y 100nA 500mA, Transistor 2SC2873 PDF

    2SA1213

    Abstract: 2SC2873
    Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1213 2SC2873 2SA1213 2SC2873 PDF

    2SA1213

    Abstract: 2SC2873
    Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 µs (typ.)


    Original     		2SA1213 2SC2873 2SA1213 2SC2873 PDF

    2SA1213

    Abstract: 2SC2873
    Text: 2SA1213 TO SH IBA 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. • • • • • : V c e (sat)~ —0.5V (Max.) (IC = —1A) High Speed Switching Time: tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1213 2SC2873 2SA1213 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1213 2 S A 1 213 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage • • • • High Speed Switching Time: tstg = 1.0//S(Typ.) P(} = 1~2W (Mounted on Ceramic Substrate)


    OCR Scan     		2SA1213 2SC2873 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC Features • • • • • 2SA1213   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package


    Original     		2SA1213 OT-89 10Vdc, PDF

    2SB1099

    Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
    Text: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118


    OCR Scan     		2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099 PDF

    2SA1213

    Abstract: 2SC2873
    Text: 2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1213 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1213 2SC2873 2SA1213 2SC2873 PDF