2SC2884 Search Results

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier

marking POJ

Abstract: 2SA1204 2SC2884
Contextual Info: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6 M AX — High DC Current Gain : hjrE = 100~320 Suitable for Output Stage of 1 Watts Amplifier Pq = 1~2W (Mounted on Ceramic Substrate)

Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)

MARKING e1v

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2884 Unit in AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6 MAX. 4.6 M A X . a4¿ao5., 1.7 M A X. FEATURES: . High DC Current Gain : hpE= 1 0 0 ~ 3 2 0 . Suitable for Output Stage of 1 Watts Amplifier . Pc= l ~ 2 W Mounted on Ceramic Substrate

2SA1204

Abstract: power transistor audio amplifier 500 watts 2SC2884 smd ic marking PC
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2884 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage

Contextual Info: TO SH IBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS 1.6 M A X. 4.6 M A X. High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1~2W (Mounted on Ceramic Substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: TO SH IBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. 1.6 M A X. 4.6 M A X. High DC Current Gain : hpE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1~2W (Mounted on Ceramic Substrate)

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

Contextual Info: TO SHIBA 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS. 1.6MAX. High DC Current Gain : hpg = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1~2W (Mounted on Ceramic Substrate)

2SC2884

Contextual Info: 2SC2884 0.8A, 35V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package Complementary to 2SA1204 High DC Current Gain 4 1 2 3 A CLASSIFICATION OF hFE

2SC2884

Contextual Info: 2SC2884 2SC2884 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 0.8 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2884 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプの出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

2SC2884

Abstract: 2SA1204
Contextual Info: 2SC2884 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2884 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 1 W アンプの出力段に適します。 • 小型フラットパッケージでハイブリッド IC 組立て用に適します。

BC184BP

Abstract: na31xj 2SC733GR 2sc733y 2SC733-GR 2sc21200 BC650C 2SC509GT BC650CS *d471a
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 25 30 BC849B PTC121 BC223B 2SC21200 2SC28840 2SC27030 2SC27030 2SC22360 BC184K BC184KB ED1402C TED1702N BC183KA MPS9633 MPS9634 2SC941Y KSC1393 ~~g~~~4 35 40 2SC380TM-Y KSC1675 2SC394GR 2SC733Y ZTX109 2SC941TM-Y

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

2SC2884

Abstract: 2SA1204
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: T O S H IB A 2SC2884 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2884 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. Unit in mm 1.6 M A X 4 .G M A X . High DC Current Gain : hpg = 100—320 UM AX 0-4 ± 0.05 IE Suitable for Output Stage of 1 Watts Amplifier

power transistor audio amplifier 500 watts

Abstract: 2SA1204 2SC2884
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SC2884 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SA1204 Absolute Maximum Ratings Ta = 25 Parameter Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1204 TRANSISTOR PNP 1. BASE FEATURES z Complementary to 2SC2884 z Small Flat Package z Audio Frequency Amplifier Application z High DC Current Gain

NPN Silicon Epitaxial Planar Transistor 700 v

Contextual Info: ST 2SC2884U NPN Silicon Epitaxial Planar Transistor for audio frequency amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 35 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO