2N7002W Search Results

Contextual Info: NEW PRODUCT 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

Contextual Info: 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package SOT-323 - * \ , h -A TO P VIEW B C 1 Mechanical Data_

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

2N7002W

Abstract: k72 marking
Contextual Info: 2N7002W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package · · · A

k72 transistor

Abstract: marking K72 transistor k72 mosfet k72 k72 td k72 diode 2N7002W
Contextual Info: SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET ＳＯＴ－３２３ N-Channel 1.GATE 2. SOURCE FEATURES 3. DRAIN １．０１ ＲＥＦ １．２５±０．０５ Power dissipation PD : 0.2 W（Tamb=25℃） Collector current ID: 115 mA

k72 transistor

Abstract: transistor k72 k72 diode 2N7002W k72 td marking K72
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 1. GATE FEATURES 2. SOURCE 1. 25¡ À0. 05 3. DRAIN 1. 01 REF Power dissipation PD : 0.2 W (Tamb=25℃) 0. 30 1. 30¡ À0. 03 Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET N-Channel SOT-323 3 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

transistor marking 1p Z

Abstract: 2N7002W
Contextual Info: PRELIMINARY 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Low On-Resistance: 2 .5 Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package

k72 transistor

Abstract: transistor k72 2N7002W-7-F k72 transistor surface mount k72 marking transistor k72 p
Contextual Info: 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Also Available in Lead Free Version

Contextual Info: 2N7002W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package · · · A

k72 transistor

Abstract: transistor marking k72 transistor k72 p k72 device marking transistor k72 k72 marking transistor k72 transistor surface mount k72 marking code
Contextual Info: SPICE MODELS: 2N7002W 2N7002W Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Low On-Resistance Low Gate Threshold Voltage A Low Input Capacitance D B C Low Input/Output Leakage Ultra-Small Surface Mount Package

2N7002W

Abstract: 2N7002WT1G 71-G1
Contextual Info: 2N7002W Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 Features • • • • ESD Protected Low RDS on Small Footprint Surface Mount Package This is a Pb−Free Device http://onsemi.com Applications • • • • V(BR)DSS RDS(on) MAX ID MAX

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2N7002W • Features SOT-323 Unit:mm 1.3±0.1 ● Low On-Resistance 2 2.3±0.15 ● Low Input Capacitance 1.25±0.1 1 0.525 0.65 ● Low Gate Threshold Voltage ● Fast Switching Speed 0.36 3 ● Low Input/Output Leakage

marking 3P

Abstract: 2N7002W 2N7002WL-AL3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM

Contextual Info: 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant

Contextual Info: 2N7002W 60V N-Channel Enhancement Mode MOSFET SOT-323 Unit：inch mm 0.004(0.10)MIN. • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.087(2.20) 0.070(1.80) • Advanced Trench Process Technology 0.087(2.20) 0.078(2.00) FEATURES

transistor marking k72

Abstract: k72 device marking
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002W Features • • • • • Low ON-Resistance Low Input Capacitance Low Gate Threshold Voltage Fast Switching Speed

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 1. GATE 2. SOURCE FEATURES 3. DRAIN 0.225W (Tamb=25℃) 0.95 0.4 2.9 Drain current 115mA ID: Drain-Source voltage VDS: 60V Operating and storage junction temperature range

Contextual Info: 2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V TYE *Fast Switching Speed : 7ns 1 1 GATE 2 SOT-323(SC-70) 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified)

k72 diode

Abstract: K72 TO K72 marking diode mosfet k72 marking k72 k72 transistor transistor k72 2N7002W marking td sot323
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

k72 transistor

Abstract: k72 device marking 22PF 2N7002W
Contextual Info: 2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V TYE *Fast Switching Speed : 7ns 1 1 GATE 2 SOT-323(SC-70) 2 SOURCE Maximum Ratings (TA=25 C Unless Otherwise Specified)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM