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    2N7000 Price and Stock

    STMicroelectronics 2N7000

    MOSFET N-CH 60V 350MA TO92-3
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    DigiKey 2N7000 Bulk 15,000
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    onsemi 2N7000G

    MOSFET N-CH 60V 200MA TO92-3
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    Velocity Electronics 2N7000G 2,253
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    Avnet Silica 2N7000G 143 Weeks 1,000
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    EBV Elektronik 2N7000G 143 Weeks 1,000
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    Vyrian 2N7000G 5,389
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    Micro Commercial Components 2N7000-AP

    MOSFET N-CH 60V 200MA TO92
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    onsemi 2N7000BU_T

    MOSFET N-CH 60V 200MA TO92-3
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    NXP Semiconductors 2N7000,126

    MOSFET N-CH 60V 300MA TO92-3
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    2N7000 Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7000 Calogic N-Channel Enhancement-Mode MOS Transistor Original PDF
    2N7000 Diodes Incorporated TRANS MOSFET N-CH 60V 0.115A 3TO-92 Original PDF
    2N7000 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7000 Fairchild Semiconductor TRANS MOSFET N-CH 60V 0.2A 3TO-92 BULK Original PDF
    2N7000 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7000 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7000 General Semiconductor DMOS Transistors (N-Channel) Original PDF
    2N7000 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    2N7000 Micro Commercial Components TRANS MOSFET N-CH 60V 0.3A 3TO-92 Original PDF
    2N7000 Motorola TMOS FET Transistor Original PDF
    2N7000 Motorola FET Transistor, Small Signal Field Effect Transistor, N Channel Enhancement Mode Silicon Gate TMOS, TO-226AA Original PDF
    2N7000 National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7000 On Semiconductor Small Signal MOSFET 200 mAmps, 60 Volts Original PDF
    2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    2N7000 Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF
    2N7000 Philips Semiconductors NPN general purpose transistor Original PDF
    2N7000 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    2N7000 Semelab FET, Enhancement, N Channel, 0.8 VThreshold, ID 0.2 A Original PDF
    2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Original PDF
    2N7000 Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF

    2N7000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors


    OCR Scan     		2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling


    OCR Scan     		2N7000 PDF

    2N7000

    Abstract: 2n7000 data sheet 2n7000 equivalent mosfet motor dc 48v
    Text: DC COMPONENTS CO., LTD. 2N7000 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.


    Original     		2N7000 500mA, 200mA 2N7000 2n7000 data sheet 2n7000 equivalent mosfet motor dc 48v PDF

    2N7000

    Abstract: No abstract text available
    Text: 2N7000 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N7000 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		2N7000 2N7000 A022009 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching


    Original     		2N7000 O-226AA 20K/box PDF

    2N7000P

    Abstract: No abstract text available
    Text: -. —. —-.-., .— N-CHANNEL 2- MARCH . . .- 2N7000P MODE VERTICAL DMOS FET ISSUE “,. ENHANCEMENT I 94 FEATURES * 60 Volt VcEo *R 0S 0. = 5 ‘2 D G s v ABSOLUTE MAXIMUM lJ&h!sJ RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Pulsed


    Original     		2N7000P VDs48V, VD-725V, 500mA 300ps. 2N7000P PDF

    fairchild 2N7002 MARKING

    Abstract: 2N7000-D nds7000
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


    Original     		2N7000 2N7002 NDS7002A 400mA O-92-3 AN-42037: ML4423 fairchild 2N7002 MARKING 2N7000-D nds7000 PDF

    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A110807 PDF

    2n7000 equivalent

    Abstract: 2n7000 2n7000 data sheet 7000 Series 2n7000 equivalents
    Text: SEMICONDUCTOR 2N7000 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 7000 K 3 No. Item 816 4 Marking Description 2N Series Name 7000 Device Name KEC K KEC CORP. Lot No. 816 Device Name 2004. 2. 11 2 Revision No : 0 8 Year


    Original     		2N7000 2n7000 equivalent 2n7000 2n7000 data sheet 7000 Series 2n7000 equivalents PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		2N7000K 100ms PDF

    2n7000 equivalent

    Abstract: equivalent of 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000 PDF

    2n7000 smd

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel Enhancement Mode MOSFET 2N7000 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● High density cell design for low RDS ON +0.1 1.3-0.1 +0.1 2.4-0.1 ● Voltage controlled small signal switch 0.4 3 1 ● High saturation current capability


    Original     		2N7000 OT-23 2n7000 smd PDF

    2N7000

    Abstract: 2N7000/2N7000
    Text: G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor N-Channel DMOS Transistors v Features_ _ • High input impedance • Low gate threshold voltage • Low drain-source ON-resistance • High-speed switching • No minority carrier storage time


    OCR Scan     		2N7000 20K/box 20K/box 2N7000 2N7000/2N7000 PDF

    2N7000G

    Abstract: 2N7000RLRAG 2N7000 MOSFET PIN DETAILS
    Text: 2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 200 mAMPS 60 VOLTS RDS on = 5 W N−Channel MAXIMUM RATINGS Rating D Symbol Value Unit Drain Source Voltage


    Original     		2N7000G 2N7000/D 2N7000G 2N7000RLRAG 2N7000 MOSFET PIN DETAILS PDF

    2N7000

    Abstract: transistors n-CHANNEL
    Text: 2N7000 DMOS Transistor N-Channel TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features • • • • • • • • max. ∅ 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching


    Original     		2N7000 O-226AA 20K/box 2N7000 transistors n-CHANNEL PDF

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


    Original     		2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB PDF

    Untitled

    Abstract: No abstract text available
    Text: WEITRON Small Signal MOSFET N-Channel 2N7000 3 DRAIN * “G” Lead Pb -Free TO-92 Features: *Low On-Resistance : 5 Ω *Low Input Capacitance: 60PF *Low Out put Capacitance : 25PF *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns 2 GATE 1. SOURCE 2. GATE


    Original     		2N7000 270TYP PDF

    fet 2n7000

    Abstract: 2N7000
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000 ISSUE 2– NOVEMBER 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 60 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.5 A Gate Source Vootage


    Original     		2N7000 500mA 200mA fet 2n7000 2N7000 PDF

    2n7000

    Abstract: 2n7000 data sheet 2n7000 equivalent
    Text: 2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Features • Symbol RDS on (Max 5 Ω )@VGS=10V { RDS(on) (Max 5.3Ω )@VGS=4.5V ■ ■ 3. Drain ● Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150°C) ◀ 2. Gate { ▲ ● ● {


    Original     		2N7000 300nF 2n7000 2n7000 data sheet 2n7000 equivalent PDF

    2N7000-TR1 equivalent

    Abstract: 2N7000 2n7000 equivalent 2N7000 MOSFET 2N7000KL 2N7000KL-TR1 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents
    Text: Specification Comparison Vishay Siliconix 2N7000KL vs. 2N7000 Description: N-Channel, 60 V D-S MOSFET Package: TO-92 Pin Out: Identical Part Number Replacements: 2N7000KL-TR1 Replaces 2N7000-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free Version) Replaces 2N7000-TR1


    Original     		2N7000KL 2N7000 2N7000KL-TR1 2N7000-TR1 2N7000KL-TR1-E3 2N7000KL 2N7000 2N7000-TR1 equivalent 2n7000 equivalent 2N7000 MOSFET 2N7000KL-TR1-E3 2N7000-TR1 2n7000 data sheet 2n7000 equivalents PDF

    2N7000KL-TR1-E3

    Abstract: BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX
    Text: 2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) VGS(th) (V) 2 at VGS = 10 V • TrenchFET Power MOSFET ID (A) 1.0 to 2.5 60 4 at VGS = 4.5 V Pb-free • ESD Protected: 2000 V 0.47 Available RoHS*


    Original     		2N7000KL/BS170KL O-226AA O-92-18RM 7000KL 18-Jul-08 2N7000KL-TR1-E3 BS170KL-TR1 170KL 2N7000KL-TR1 BS170KL-TR1-E3 rohs marking code vishay SILICONIX PDF

    2N7000

    Abstract: 2n7000k
    Text: SEMICONDUCTOR 2N7000K TECHNICAL DATA N Channel MOSFET ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES B C ESD Protected 2000V. A High density cell design for low RDS ON . Voltage controlled small signal switch. Rugged and reliable. N E K


    Original     		2N7000K 100ms 2N7000 2n7000k PDF

    2N7002 MARKING

    Abstract: 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET
    Text: 2N7000 2N7002 N-CHANNEL 60V - 1.8Ω - 0.35A SOT23-3L - TO-92 STripFET II MOSFET Table 1: General Features TYPE 2N7000 2N7002 • ■ ■ Figure 1: Package VDSS RDS on Id 60 V 60 V < 5 Ω (@ 10V) < 5 Ω (@ 10V) 0.35 A 0.20 A TYPICAL RDS(on) = 1.8Ω @10V


    Original     		2N7000 2N7002 OT23-3L OT23-3L 2N7002 MARKING 2N7002 2N7002 st 2N7002 di codes marking st2n 2N7000 MOSFET PDF