ti77
Abstract: BV EI 301
Text: PRELIM INARY KM 29V16000ATS/RS FLASH M EM O RY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization • - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase
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KM29V16000ATS/RS
250us
KM29V16000A
Figure15
0D242fl2
ti77
BV EI 301
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 29V16000ATS/RS 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM 29V 16000A T S /R S is a 2 M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (6 5 ,5 3 6 )x8 bit.
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KM29V16000ATS/RS
6000A
264-byte
250ns
0D242Ã
Figure15
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Untitled
Abstract: No abstract text available
Text: 29V16000AT, 29V16000AIT FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29V16000AT,
KM29V16000AIT
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Untitled
Abstract: No abstract text available
Text: KM29N16000ATS FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000ATS
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29W16000
Abstract: 29V160
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).
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KM29N16000AT,
KM29N16000AIT
29W16000
29V160
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Untitled
Abstract: No abstract text available
Text: 29V16000ATS ELECTRO NICS Flash 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The 29V16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit - Data Register : (256 + 8)bit x 8bit
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KM29V16000ATS
KM29V16000ATS/RS
264-byte
250ps
-TSOP2-400F
-TSOP2-400R
0031flfll
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Untitled
Abstract: No abstract text available
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document T ills 2M X 8 Bit NAND Flash Memory R evision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).
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KM29N16000AT,
KM29N16000AIT
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Untitled
Abstract: No abstract text available
Text: 29V16000AT, 29V16000AIT FLASH MEMORY Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).
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KM29V16000AT,
KM29V16000AIT
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N16000ATS Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000ATS
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Untitled
Abstract: No abstract text available
Text: 29V16000AT, 29V16000AIT FLASH MEMORY Document Tills 2M x 8 Bit NAND Flash Memory Revision History Draft Date Revision No. History 0.0 Data Sheet, 1.0 1. 2. 3. 4. 1.1 1997. Data Sheet, 1998. Changed I b e r s p a ra m e te r: 5ms Typ. —» 2ms(Typ ).
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KM29V16000AT,
KM29V16000AIT
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Untitled
Abstract: No abstract text available
Text: KM29W16000AT, KM29W16000AIT FLASH MEMORY Document T ills 2M x 8 Bit NAND Flash Memory R evision H istory Revision No. History Draft Date Remark 0.0 Initial issue. ApriM 0th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM29W16000AT,
KM29W16000AIT
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W16000ATS Document T ills 2M x 8 Bit NAND Flash Memory R evision H istory Revision No. History Draft Date Remark 0.0 Initial issue. ApriM 0th 1998 Preliminary 1.1 Data Sheet 1998. July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
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KM29W16000ATS
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KM29V16000ATS
Abstract: No abstract text available
Text: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V
250us
16000ATS
-TSOP2-400F
-TSOP2-400R
KM29V16000ATS
7Tb4142
KM29V16000ATS
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Untitled
Abstract: No abstract text available
Text: MEM ORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. rower Supply 512Kx 8 5V ±10% 3.3V±10% 16M bit 2M x 8 5V ±10% Part Number KM29N040T Features Package 32B Page Mode 4K B Block size 44 40 T S O P II tR C = 120ns = 20us tRC=80ns 256B Page Mode
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512Kx
KM29N040T
KM29V040T
16000T/R
KM29N16000TS/RS
KM29N16000ET/ER
29N16000ETS/ERS
120ns
KM29N16000AT/AR
KM29N16000ATS/ARS
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