28TSOP Search Results

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

Contextual Info: AMIC TECHNOLOGY Taiwan , INC. Spec. No. : 04-83-002 Update : 12/17/1999 Pages : 1 of 9 TAPE&REEL PACKING SPECIFICAITON 1. Packing Procedures 2. Carrier Tape Dimensions - 28SOP,26/28SOJ,28TSOP,32sTSOP 3. Carrier Tape Dimensions - 32/40/44SOP,32/40SOJ,32/44/50TSOP,100QFP

K6X0808T1D

Abstract: K6X0808T1D-B K6X0808T1D-F K6X0808T1D-Q K6X0808T1D-NF70
Contextual Info: K6X0808T1D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft October 09, 2002 Preliminary 0.1 revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type November 08, 2002

A14C

Abstract: LH53259 sharp mask rom
Contextual Info: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)

22W04

Abstract: KM62256CLG-LV KM62256CLRG-LV KM62256CLTG-LV
Contextual Info: KM62256CL-LV CMOS SRAM 32,768 WORD x 8 Bit Extended Voltage OperationCMOS Static RAM FEATURES • Extended Operating Voltage : 3.0-5.5V • Fast Access Time -3.3V Operation : 100ns Max. -5V Operation : 70ns(Max.) • Low Power Dissipation Standby operating

8254aa

Abstract: capacitor NED je8 S-8353A33MC-IQS-T2 S-8254 battery c2u G83 PNP Transistor b9d s2914 S-8355M50MC-MDJ-T2 AVR 8335 M6M80041
Contextual Info: Network Components Business Unit CMOS IC Product Catalogue 2002-2003 October 2002 SII offers data sheets on the Internet. On SII-IC.COM, SII offers data sheets which summarize the specifications of each IC. For the latest information, access the following WEB site.

KM62256D

Abstract: KM62256DLI-L KM62256DL-L km62256
Contextual Info: KM62256D Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision HSstorv Revision No History Draft Data Remark 0.0 Initial draft M ay 18th 1997 Design target 0.1 First revision - KM62256DLVDLI Isbi = 100 -> 50|xA K M 6 2256D L-L Is b i = 20 - > 1 0 |iA

Contextual Info: MX27C512 512K-BIT [64Kx8] CMOS EPROM FEATURES • • • • • • 64K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 45/55/70/90/100/120/150ns Totally static operation Completely TTL compatible • Operating current: 30mA

K6E0808C1C

Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
Contextual Info: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

28DIP600

Abstract: KM62256CLP-7 KM62256C KM62256CL KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L KM62256CL-L
Contextual Info: KM62256C Family CMOS SRAM Document Title 32Kx8 bit Low Power CMOS Static RAM Revision History Revision No History Draft Data Remark 0.0 Advance information February 12th 1993 Design target 0.1 Initial draft November 2nd 1993 Preliminary 1.0 Finalize September 24th 1994

Contextual Info: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.

Contextual Info: CMOS SRAM KM62256CL/CL-L 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time : 55, 70, 8 5 , 100ns Max. • Low P o w e r Dissipation S tandby (CMOS) : 10yuW(Typ.) L-Version 5/iW(Typ.) LL-Version The K M 62 256C L /C L-L is a 2 6 2 ,1 4 4 -b it high-speed

Contextual Info: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

Contextual Info: KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994

KM62256CLP-7

Contextual Info: KM62256C CMOS SRAM ELECTRONICS 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 um CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CMOS process technology. The family

300b tube

Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
Contextual Info: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM

GM76C256CLLFW70

Abstract: GM76C8128CLLFW70 GM76C8128CLLFW55 GM76C256CLLFW55 SOP28 gm76U8128 GM76V8 SOP32 GM76C256CLLFW-70 gm76U8128CLL
Contextual Info: C M O S S TAT I C R A M CMOS SRAMS Part Number GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70 GM76C256CLLT-70 GM76V256CLLFW-100 GM76V256CLLT-100 GM76U256CLLFW-120 GM76U256CLLT-120 GM76C8128CLLFW-55

GM76C256CLLFW70

Abstract: GM76V256CLLT-85 SOP28 GM76C8128CLLFW70 uPD431000 GM76C8128CLLT70 GM76C8128CLLFW55
Contextual Info: C M O S S TAT I C R A M CMOS SRAMS • • • • • • • • • • • • • • • • • • • • • • • New Product Part Number GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70

unit inch sdip28

Abstract: LH52256C lh52256c-70ll
Contextual Info: LH52256C/CH FEATURES • 32,768 x 8 bit organization • Access time: 70 ns MAX. CMOS 256K (32K × 8) Static RAM PIN CONNECTIONS TOP VIEW 28-PIN DIP 28-PIN SK-DIP 28-PIN SOP • Supply current: Operating: 45 mA (MAX.) 10 mA (MAX.) (tRC, tWC = 1 µs) Standby: 40 µA (MAX.)

AS71

Contextual Info: LH52256AS PIN CONNECTIONS FEATURES • 32,768 x CMOS 256K 32K x 8 Static RAM 8 bit organization TO P VIEW 28-PIN SOP • Access time: 500 ns (MAX.) Z' 28 Ai2 C 2 27 □ WE 7 C 3 26 Zl A,3 Aß [Z 4 25 Z3 Ag a 18 mW (tRc, twc = 1 M-S (TYP.) Standby: 72 (MAX.)

KM62V256CLE

Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM 32Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS • Organization : 32K x 8 • Power Supply Voltage KM62V256C family : 3.3V +/- 0.3V KM62U256C family : 3.0V +/- 0.3V

Contextual Info: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark

LH64400CK-70

Abstract: lh61664 LH62800K-60 LH64400 lh64260 LH64400CK-60 20DIP LH62800 LH61664N LH61664 K-70
Contextual Info: MEMORIES Dynamic RAMs ★ U n d e r d e v e lo p m e n t C apacity Configuration Model No. Mode A ccess tim e ns 50 256k 256k x 1 Page mode LH21256 256kx4 Fast page mode LH64256B 6 4 k x 16 Fast page mode LH61664 256kx8 Fast page mode LH62800 Fast page mode

km62256clg-7

Abstract: 62256CL-L
Contextual Info: KM62256C Family CMOS SRAM 32Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.7 uM CMOS The KM62256C family is fabricated by SAMSUNG'S • Organization : 32K x 8 advanced CM O S process technology. The family