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    28F512 Price and Stock

    Rochester Electronics LLC CAT28F512HI-90

    IC FLASH 512KBIT PARALLEL 32TSOP
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    DigiKey CAT28F512HI-90 Bulk 780 61
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    onsemi CAT28F512GI12

    IC FLASH 512KBIT PARALLEL 32PLCC
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    DigiKey CAT28F512GI12 Tube
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    Vyrian CAT28F512GI12 1,519
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    Micron Technology Inc PC28F512P33TFA

    IC FLASH 512MBIT PAR 64EASYBGA
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    DigiKey PC28F512P33TFA Tray
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    ComSIT USA PC28F512P33TFA 10
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    Velocity Electronics PC28F512P33TFA 55
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    Avnet Silica PC28F512P33TFA 143 Weeks 1,800
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    Micron Technology Inc PC28F512P30TF0

    IC FLASH 512MBIT PAR 64EASYBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PC28F512P30TF0 Tray 1
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    Micron Technology Inc PC28F512P30EF0

    IC FLASH 512MBIT PAR 64EASYBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PC28F512P30EF0 Tray 1
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    Find more 28F512 price and stock on Findchips.com

    28F512 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28F512 Intel 512K (64Kx8) CMOS Flash Memory Scan PDF
    28F512 Intel 512K(64Kx8)CMOS FLASH MEMORY Scan PDF
    28F512 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F512 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F512 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F512 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F512 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F512 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    28F512-12A Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF
    28F512-12F Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF
    28F512-12N Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF
    28F512I-15A Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF
    28F512I-15F Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF
    28F512I-15N Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF
    28F512M-15F Philips Semiconductors 512Kbit (64K x 8) LATCHED EEPROM Scan PDF

    28F512 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    28F512A

    Abstract: 28F512A-12
    Text: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible 28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12


    OCR Scan     		SMJS514C-FEBRUARY TMS28F512A 28F512A-10 100ns 28F512A-12 120ns 28F512A-15 150ns 28F512A-17 170ns 28F512A PDF

    28F512

    Abstract: 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming
    Text: in te i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp H igh-Perform ance Read


    OCR Scan     		28F512 28F512-120 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 28F512 28F512 input id intel 28f512 80C186 N28F512 P28F512 80C186 programming PDF

    2SF512

    Abstract: No abstract text available
    Text: 28F512 D Q q -D Q 7 E R A S E V O LTAG E IN P U T / O U T P U T SW ITC H BUFFERS TO A R R A Y SO U R C E ST A T E C O N TR O L COMMAND R E G IST ER IN T EG R A T ED STO P T IM ER u PGM V O LTAG E SW ITC H C H IP E N A B L E O U T PU T E N A B L E CE# • DAT A


    OCR Scan     		28F512 28F512 P28F512 P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 2SF512 PDF

    intel 28F256

    Abstract: intel 28F256 flash 28F256 a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming T S O P 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 01h v Socket : IC191-0322-001 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


    Original     		IC191-0322-001 28F256A, 28F256 28F512, 28F010, 28F020 32-LEAD intel 28F256 intel 28F256 flash a15 diode a4 3f D021 A15-11 a3 electronic device A1610 transistor A16 PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e


    OCR Scan     		28F512 32-Pin 16-038-S PL032â Am28F512 16-038FPO-5 TS032â 16-038-TSOP-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: In te l 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 1 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read


    OCR Scan     		28F512 ER-20, ER-24, RR-60, AP-316, AP-325 TP28F512-120, TN28F512-120 4fl5bl75 D154flbb PDF

    Am2BF512

    Abstract: No abstract text available
    Text: HNA: AMD£I A m 28F512 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    OCR Scan     		28F512 AM28F512 Am28F512 Am2BF512 PDF

    28F512

    Abstract: 290204 231369 N28F512-120 P28F512 28F512 input id BIOS 32 Pin PLCC intel 28f512 TN28F512-120 TP28F512-120
    Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read 120 ns Maximum Access Time


    Original     		28F512 32-Pin 32-Lead Microcontrolle8F512-120 P28F512-150 N28F512-150 TN28F512-120 ER-20 ER-24 RR-60 28F512 290204 231369 N28F512-120 P28F512 28F512 input id BIOS 32 Pin PLCC intel 28f512 TN28F512-120 TP28F512-120 PDF

    a6628

    Abstract: intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 28F256
    Text: HSP ADAPTER SYSTEM GENERAL FLASH EPROM Hi-Speed Programming P L C C 3 2 . H S P S O C K E T B O AR D v Date : 1998/11/25 v Board ID : 0Bh v Socket : IC51-0324-453 YAMAICHI v Devices List : JP1 : 1-2 short Manufacture Intel Device 28F256A, 28F256(12v)/(12.8v), 28F512, 28F010, 28F020


    Original     		IC51-0324-453 28F256A, 28F256 28F512, 28F010, 28F020 a6628 intel 28F256 intel 28F256 flash IC51-0324-453 28F256A a7529 IC51 28F010 28F020 PDF

    a6628

    Abstract: 28F512 28F512 input id 512KBIT A-6628
    Text: Philips Components-Signetics 28F512 Document No. ECN No. Date of Issue June 1990 Status Objective Specification 512K-bit FLASH memory 64K x 8 Memory Products FEATURES GENERAL DESCRIPTION • 64K-byte writable non-volatile memory The Philips Components' 28F512 is an


    OCR Scan     		28F512 512K-bit 64K-byte 32-Pin a6628 28F512 28F512 input id 512KBIT A-6628 PDF

    Untitled

    Abstract: No abstract text available
    Text: JAN * « *' IIIIICRTRLYST MWi t I S E M I C O N D U C T O R 2231 CALLEDELUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 C A T 28F512V 5 512K Bit (64Kx8) CMOS FLASH MEMORY DESCRIPTION The C A T 2S F512V 5 is a high speed 6-iK x 8-bit F lash erasable and electrically rep ro gram m able


    OCR Scan     		28F512V 64Kx8) F512V PDF

    Untitled

    Abstract: No abstract text available
    Text: C T ^7# S G S 'T H O M S O N [ID Ä IIL IIg T O ® * ! M 28F512 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10|is


    OCR Scan     		28F512 M28F512 PLCC32 PDF

    N28F512-150

    Abstract: 26F512 intel PLD
    Text: INTEL CORP MENORY/PLP/ irrte1 5bE I • 182i,l?t, D07fa233 D27 28F512 512K (64K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chip-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jLts Typical Byte-Program — 1 Second Chip-Program


    OCR Scan     		D07fa233 28F512 -32-L P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, 26F512 intel PLD PDF

    TMS28F512A TEXAS INSTRUMENTS

    Abstract: TMS28F512A
    Text: 28F512A 524288-BIT FLASH MEMORY SMJS514B - FEBRUARY 1994 - REVISED MARCH 1996 Organization . . . 64K x 8-Bit Flash Memory All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time 28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15


    OCR Scan     		TMS28F512A 524288-BIT SMJS514B 28F512A-10 28F512A-12 28F512A-15 28F512A-17 TMS28F512A 288-bit, TMS28F512A TEXAS INSTRUMENTS PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Components-Signetics 28F512 Document No. ECN No. 512K-bit FLASH memory Date of Issue June 1990 Status Objective Specification 64K X 8 Memory Products FEATURES G ENERAL DESCRIPTION • 64K -byte w ritab le non -vo latile m em ory The P hilips C om p o n en ts' 2 8F 512 is an


    OCR Scan     		28F512 512K-bit 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e


    OCR Scan     		28F512 32-Pin Am28F512 PDF

    N28F512-200

    Abstract: P28F512-200 28F512-150 29020 28f512-200
    Text: intei 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program


    OCR Scan     		28F512 28F512 P28F512-120 P28F512-150 P28F512-200 32-PIN 32-LEAD N28F512-120 N28F512-150 N28F512-200 N28F512-200 P28F512-200 28F512-150 29020 28f512-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chlp-Erase — 1 Second Typical Chlp-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP


    OCR Scan     		28F512 P28F512-120 P28F512-150 N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, RR-60, ER-24, PDF

    intel 28f512

    Abstract: 28F512 Intel Small Outline Package Guide how to program in eprom TN28F512-120 80C166 80C186 N28F512 P28F512 intel BIOS 32 Pin PLCC
    Text: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ High-Performance Read


    OCR Scan     		28F512 intel 28f512 28F512 Intel Small Outline Package Guide how to program in eprom TN28F512-120 80C166 80C186 N28F512 P28F512 intel BIOS 32 Pin PLCC PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F512 512K 64K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 )j.s Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycle Typical ■ 12.0V ±5% VPP


    OCR Scan     		28F512 Flas12-120 N28F512-120 TP28F512-120 P28F512-150 N28F512-150 TN28F512-120 ER-20, ER-24, RR-60, PDF

    28FS12

    Abstract: 51212
    Text: in t e i 28F512 512K 64K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase Quick-Puise Programming Algorithm — 10 ju.s Typical Byte-Program — 1 Second Chlp-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read


    OCR Scan     		28F512 32-Lead N28F512-120 N28F512-150 TP28F512-120 TN28F512-120 ER-20, ER-24, RR-60, AP-316, 28FS12 51212 PDF

    intel 28f512

    Abstract: 28F512 80C166 80C186 P28F512
    Text: 512K 64K X 8 28F512 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 1 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V +5% VPP ■ Command Register Architecture for


    OCR Scan     		28F512 intel 28f512 28F512 80C166 80C186 P28F512 PDF

    D28F512-120P1C4

    Abstract: d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200
    Text: INTE L CORP intel • M EM OR Y/ LO GI C SOE D ■ H&2bl 7h Q0b72fl2 S ■ V -^ -/5 -2 7 28F512 512K (64K x 8) CMOS FLASH MEMORY Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 iia Typical Byte-Program


    OCR Scan     		40Sbl7b Q0b75Ã T-M-ft-17 28F512 00b7304 T-46-13-27 32-PIN 32-LEAD 120ns D28F512-120P1C4 d28f512 N28F512-120P1C4 28F512-150P1C4 N28F512-150P1C4 N28F512-200P1C4 29020 N28F512-200 PDF

    28F512A

    Abstract: AOC121
    Text: ►UNDER DEVELOPMENT S-28F512A CMOS 512K-bit FLASH E2PROM The S-28F512A is a 64K-word x 8-bit 5 V single power supply Flash E2PROM. The memory array is divided into 32 sectors 2K-byte each and data is erased in sector units. Applying 12 V to Vpp terminal erases all the data


    OCR Scan     		S-28F512A 512K-bit S-28F512A 64K-word 536-word 32-pin 0000h 0001H 28F512A AOC121 PDF