40SBL7B Search Results
40SBL7B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 5 Second Typical ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Typical Chip-Program ■ Single High Voltage for Writing and Erasing |
OCR Scan |
1024K M28F010 ER-20, ER-24, 28F010 RR-60, AP-316, |