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    28C17A Search Results

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    28C17A Price and Stock

    Rochester Electronics LLC CAT28C17AW20

    IC EEPROM 16KBIT 28SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28C17AW20 Bulk 77
    • 1 -
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    • 100 $3.94
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    Rochester Electronics LLC CAT28C17AK20

    IC EEPROM 16KBIT 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28C17AK20 Bulk 77
    • 1 -
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    • 100 $3.94
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    Rochester Electronics LLC CAT28C17AWI-20T

    CAT28C17 - 16-KBit Parallel EEPR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CAT28C17AWI-20T Bulk 75
    • 1 -
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    • 100 $4
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    Emerson Process Management CAT28C17AP-20

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CAT28C17AP-20 2
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    Microchip Technology Inc 28C17AT-25I/SOJ31

    2K X 8 EEPROM 5V, 250 NS, PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 28C17AT-25I/SOJ31 3,200
    • 1 $13.5
    • 10 $13.5
    • 100 $13.5
    • 1000 $4.725
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    28C17A Datasheets (239)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C17A Microchip Technology 16K (2Kx8) CMOS EPROM Original PDF
    28C17A Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UA Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UB Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UC Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XA Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XB Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XC Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/J Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/K Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/L Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/P Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/SO Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15I/J Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A15I/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17A-15I/K Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A15I/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17A-15I/L Microchip Technology 16k (2k x 8) CMOS EEPROM Original PDF
    28C17A-15I/L Microchip Technology 16K (2Kx8) CMOS EEPROM Original PDF
    28C17A15I/L General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C17A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: 28C17A DK-2750 RG41
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original
    PDF 28C17A 200B 28C17A DK-2750 RG41

    tce 1994

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC PLCC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 21 I/O6 17 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 16 DIP/ SOIC


    Original
    PDF 28C17A Time--150 Time--200 DS11127F-page tce 1994

    28C17A

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original
    PDF 28C17A D-85737 NL-5152 28C17A

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original
    PDF 28C17A Time--150 Time--200 32-Pin DS11127I-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 14 28 27


    Original
    PDF 28C17A DS11127G-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original
    PDF 28C17A Time--150 Time--200 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original
    PDF 28C17A D-85737 NL-5152

    Untitled

    Abstract: No abstract text available
    Text: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­


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    PDF bl032Gl QGG7S33 28C17A polS11127D-page bl032Ql 28C17AF 200ns DS11127D-page

    Untitled

    Abstract: No abstract text available
    Text: $ M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Pow er Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or ms • Data Retention >10 years


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    PDF 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro c h ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200n.s or 1ms • Data Retention >10 years


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    PDF 28C17A 150ns DS11127C-6 DS11127C-8 200ns

    Untitled

    Abstract: No abstract text available
    Text: M $ 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 ¡is or 1 ms • Data Retention >200 years • High Endurance- Minimum 104 Erase/Write Cycles


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    PDF ROY/B57C 1/01C 28C17A Time--200 DS11127H-page7-23 28C17A 8x20mm

    200B

    Abstract: 28C17A
    Text: ^ÊÊÊÊÈ.^- & M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years


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    PDF 28C17A 32-Pin MS-016AE DS00049M-page 200B 28C17A

    Untitled

    Abstract: No abstract text available
    Text: M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles


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    PDF 28C17A 32-Pin S-016 DS00049M-page

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read A ccess Time— 150 ns • CMOS Technology fo r Low P ow er Dissipation - 30 m A Active - 100 (iA S tandby • Fast Byte W rite Time— 200 |xs o r 1 ms • Data Retention >10 years


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    PDF 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years


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    PDF 28C17A 32-updates. DS11127F L103201

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years


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    PDF 28C17A 150ns 200ns 28C17A DS11127C-7 28C17AF 200ns

    28C17A

    Abstract: No abstract text available
    Text: ^ÊÊÊÊÈ.^- & M ic r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years


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    PDF 28C17A 32-Pin MS-016AE DS00049M-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A DICE FORM Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • 250ns Access Time • CMOS Technology for Low Power Dissipation — 30mA Active — 100|iA Standby • Fast Byte Write Time— 1ms • Automatic Write Operation


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    PDF 28C17A 250ns 28C17A The28C17A DS11134A-6 DS11134A-8

    10F-1C

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C17A M ig z r o n c h ip i 16K 2K X 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms • Data Retention >200 years


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    PDF 32-Pin DS111271-page 10F-1C

    28C17A

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


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    PDF 28C17A 32-Pin 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K X 8 CMOS Electrically Erasable PROM need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device


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    PDF 28C17A 28C17AF DS11127D-page

    Untitled

    Abstract: No abstract text available
    Text: $ 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time— 200 |is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


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    PDF 28C17A 32-Pin 28C17AF 8x20mm 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: & 28C17A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C17A is a CMOS 16K non-volatile electrically Erasable and Programm able Read Only Memory. The 28C17A is accessed like a


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    PDF 28C17A 28C17A 28C17AF 26C17A

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:


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    PDF CAT28C17A 16K-Bit CAT28C17A CAT28C17A. 28C17A CAT28C17ANI-20TE7