APT10035LLL
Abstract: APT2X30D120J APT2X31D120J H100
Text: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30D120J APT2X31D120J 27 2 T- 4 APT2X31D120J APT2X30D120J 1200V 1200V 27A 27A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode
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APT2X31D120J
APT2X30D120J
OT-227
APT10035LLL
APT2X30D120J
APT2X31D120J
H100
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FRK250H
Abstract: 1E14 2E12 FRK250D FRK250R Rad Hard in Fairchild for MOSFET PHOTO TRANSISTOR
Text: FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRK250D,
FRK250R,
FRK250H
O-204AE
100KRAD
300KRAD
1000KRAD
3000KRAD
FRK250H
1E14
2E12
FRK250D
FRK250R
Rad Hard in Fairchild for MOSFET
PHOTO TRANSISTOR
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PDF
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FDB390N15A
Abstract: jc31 27a diode MOSFET 150V
Text: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mW Features Description • RDS on = 33.5mW ( Typ.)@ V GS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet
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FDB390N15A
FDB390N15A
jc31
27a diode
MOSFET 150V
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSYA250D,
FSYA250R
Rad Hard in Fairchild for MOSFET
1E14
2E12
FSYA250D
FSYA250D1
FSYA250D3
FSYA250R
FSYA250R1
FSYA250R3
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1E14
Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Text: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSYA250D,
FSYA250R
1E14
2E12
FSYA250D
FSYA250D1
FSYA250D3
FSYA250R
FSYA250R1
FSYA250R3
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1E14
Abstract: 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSJ9260D,
FSJ9260R
-200V,
1E14
2E12
FSJ9260D
FSJ9260D1
FSJ9260D3
FSJ9260R
FSJ9260R1
Rad Hard in Fairchild for MOSFET
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PDF
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EFC6611R
Abstract: No abstract text available
Text: Ordering number : ENA2291A EFC6611R N-Channel Power MOSFET 12V, 27A, 3.2mΩ, Dual EFCP http://onsemi.com Features • 2.5V drive Protection diode in Halogen free compliance Common-drain type 2KV ESD HBM Applications Lithium-ion battery charging and discharging switch
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ENA2291A
EFC6611R
EFCP3517-6DGH-020
5000mm2ï
A2291-6/6
EFC6611R
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Untitled
Abstract: No abstract text available
Text: Application Note 1745 Real Time Clock USB Evaluation System Powering Down Intersil RTC Devices Supported WITH USER EEPROM NO USER EEPROM ISL12024 ISL1208 ISL12020M ISL12025 ISL12008 ISL12022M ISL12026/26A ISL1209 ISL12022MA ISL12027/27A ISL1218 ISL12032 ISL12028/28A
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ISL12024
ISL1208
ISL12020M
ISL12025
ISL12008
ISL12022M
ISL12026/26A
ISL1209
ISL12022MA
ISL12027/27A
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12n60b3d
Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
HGT1S12N60B3DS
12n60b3d
HGTP12N60B3D
HGT1S12N60B3DS9A
HGTG12N60B3D
TA49188
TB334
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TA49171
Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG12N60B3D,
HGTP12N60B3D,
HGT1S12N60B3DS
150oC.
TA49171.
TA49188.
TA49171
IGBT JUNCTION TEMPERATURE CALCULATION
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PDF
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IRF540N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description
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IRF540N
O-220
commercial-indust10
IRF540N
IRF1010
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJL6018DPK R07DS0816EJ0200 Previous: REJ03G1819-0100 Rev.2.00 Jun 21, 2012 600V - 27A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode Low on-resistance RDS(on) = 0.22 typ. (at ID = 13.5 A, VGS = 10 V, Ta = 25C)
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RJL6018DPK
R07DS0816EJ0200
REJ03G1819-0100)
PRSS0004ZE-A
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HGT1S12N60B3S
Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP12N60B3,
HGT1S12N60B3S
HGTP12N60B3
HGT1S12N60B3S
150oC.
G12N60B3
HGT1S12N60B3S9A
HGTP12N60B3D
LD26
TB334
g12n60
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PDF
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76419S
Abstract: HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P 76419
Text: HUFA76419P3, HUFA76419S3S Data Sheet November 2000 File Number 4978 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419P3 HUFA76419S3S
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HUFA76419P3,
HUFA76419S3S
O-220AB
O-263AB
HUFA76419P3
76419S
HUFA76419P3
HUFA76419S3S
HUFA76419S3ST
TB334
76419P
76419
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Untitled
Abstract: No abstract text available
Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the
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HGTP12N60B3,
HGT1S12N60B3S
HGTP12N60B3
HGT1S12N60B3S
150oC.
TA49171.
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PDF
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226703 TECHNICAL DATA DATASHEET 4193, REV. - HERMETIC POWER MOSFET - N-CHANNEL FEATURES: • 200 Volt, 0.08 Ohm, 27A MOSFET • Isolated Hermetic Metal Package • Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD226703
O-257
O-257
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PDF
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FDH27N50
Abstract: No abstract text available
Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH27N50
O-247
FDH27N50
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Untitled
Abstract: No abstract text available
Text: AP9965GEH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D Simple Drive Requirement 40V RDS ON G ID Fast Switching Characteristic 28m 27A S Description Advanced Power MOSFETs from APEC provide the
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AP9965GEH/J
O-252
AP9965GEJ)
O-251
100us
100ms
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Untitled
Abstract: No abstract text available
Text: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSYA250D,
FSYA250R
FSYA250R
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PDF
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SM81A
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9260D,
FSJ9260R
-200V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
SM81A
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PDF
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Untitled
Abstract: No abstract text available
Text: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSJ9260D,
FSJ9260R
-200V,
varietyTO-254AA
MIL-S-19500
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PDF
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IRF540R
Abstract: RF540 trf540 IRF542R IIRF543R IRF541R IRF543R 250TI
Text: Rugged Power M O IRF540R, IRF541R IRF542R, IRF543R File Num ber 2009 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 100V-60V rDs on = 0.0850 and 0.11fi TERMINAL DIAGRAM D Features:
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OCR Scan
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IRF540R,
IRF541R
IRF542R,
IRF543R
00V-60V
92cs-42ss*
IRF541R,
IRF542R
IIRF543R
IRF540R
RF540
trf540
IRF543R
250TI
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PDF
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IRFP140R
Abstract: IRFP142R IRFP143R CI 6264 IRFP142 IRFP141R f 6267 9l 15a
Text: Rugged Power M _ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Num ber 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0 .0 8 5 0 and 0.110 N-CHANNEL ENHANCEMENT MODE
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OCR Scan
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IRFP140R,
IRFP141R,
IRFP142R,
IRFP143R
0V-100V
2cs-42cm
IRFP142R
IRFPI43R
IRFP140R
CI 6264
IRFP142
IRFP141R
f 6267
9l 15a
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PDF
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Zener diode 18A
Abstract: ZENER 18A 27a zener diode diode zener t 27a
Text: SILICON DIFFUSED TYPE ZENER DIODE 2Z16A/18A/27A Unit in m m TRANSIENT SUPPRESSOR FEATURES : . Peak Reverse • Power Dissipation P R S M = 6 0 0 W / l m s e c expo. . Zener Voltage : V ^ = 1 6 — 27V . Plastic Mold Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL
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OCR Scan
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2Z16A/18A/27A
2Z16A
2Z27A
Zener diode 18A
ZENER 18A
27a zener diode
diode zener t 27a
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