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    26N60 Search Results

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    26N60 Price and Stock

    Vishay Siliconix SIHH26N60E-T1-GE3

    MOSFET N-CH 600V 25A PPAK 8 X 8
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    DigiKey SIHH26N60E-T1-GE3 Digi-Reel 5,625 1
    • 1 $6.35
    • 10 $4.263
    • 100 $6.35
    • 1000 $2.52
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    SIHH26N60E-T1-GE3 Cut Tape 5,625 1
    • 1 $6.35
    • 10 $4.263
    • 100 $6.35
    • 1000 $2.52
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    Littelfuse Inc IXFH26N60P

    MOSFET N-CH 600V 26A TO247AD
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    DigiKey IXFH26N60P Tube 5,040 1
    • 1 $8.78
    • 10 $8.78
    • 100 $5.48833
    • 1000 $4.69012
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    RS IXFH26N60P Bulk 8 Weeks 30
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    New Advantage Corporation IXFH26N60P 210 1
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    • 100 $7.33
    • 1000 $6.84
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    STMicroelectronics STL26N60DM6

    MOSFET N-CH 600V 15A PWRFLAT HV
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    DigiKey STL26N60DM6 Cut Tape 2,997 1
    • 1 $4.72
    • 10 $3.123
    • 100 $4.72
    • 1000 $1.70703
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    STL26N60DM6 Digi-Reel 2,997 1
    • 1 $4.72
    • 10 $3.123
    • 100 $4.72
    • 1000 $1.70703
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    Avnet Americas STL26N60DM6 Reel 14 Weeks 3,000
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    Mouser Electronics STL26N60DM6
    • 1 $4.44
    • 10 $3.01
    • 100 $2.17
    • 1000 $1.71
    • 10000 $1.69
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    STMicroelectronics STL26N60DM6 1
    • 1 $4.35
    • 10 $2.95
    • 100 $2.13
    • 1000 $1.76
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    Avnet Silica STL26N60DM6 15 Weeks 3,000
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    EBV Elektronik STL26N60DM6 15 Weeks 3,000
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    STMicroelectronics STFI26N60M2

    MOSFET N-CH 600V 20A I2PAKFP
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    DigiKey STFI26N60M2 Tube 1,494 1
    • 1 $4.31
    • 10 $4.31
    • 100 $4.31
    • 1000 $1.53637
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    STMicroelectronics STF26N60DM6

    MOSFET N-CH 600V 18A TO220FP
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    DigiKey STF26N60DM6 Tube 957 1
    • 1 $4.9
    • 10 $3.251
    • 100 $3.251
    • 1000 $1.84856
    • 10000 $1.78263
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    Avnet Americas STF26N60DM6 Tube 14 Weeks 1,000
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    • 1000 $1.78263
    • 10000 $1.67777
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    Mouser Electronics STF26N60DM6
    • 1 $4.47
    • 10 $3.04
    • 100 $3.04
    • 1000 $1.78
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    STMicroelectronics STF26N60DM6 1
    • 1 $4.38
    • 10 $2.98
    • 100 $2.98
    • 1000 $1.78
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    Bristol Electronics STF26N60DM6 50 2
    • 1 -
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    • 100 $1.4
    • 1000 $1.4
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    Avnet Silica STF26N60DM6 15 Weeks 50
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    EBV Elektronik STF26N60DM6 15 Weeks 50
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    Find more 26N60 price and stock on Findchips.com

    26N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26N60P

    Abstract: PLUS220SMD
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol


    Original     		PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD

    26n60q

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF 26N60Q 247TM O-264 728B1 26n60q

    26n60

    Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


    Original     		PDF 26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 26N60 O-268 O-247 O-268 728B1 123B1 065B1

    26N60Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C


    Original     		PDF 26N60Q ISOPLUS247TM 247TM E153432

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 26N60Q 247TM 728B1

    26n60

    Abstract: 26N60P PLUS220SMD
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF 26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD

    max2678

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 26N60P 26N60PS O-247 O-268 PLUS220 max2678

    Untitled

    Abstract: No abstract text available
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol


    Original     		PDF 26N60P 26N60PS O-247 405B2 26N60P PLUS220

    DSA003703

    Abstract: 26n60
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF 26N60P 26N60PS O-247 O-268 DSA003703 26n60

    26N60P

    Abstract: TO-248
    Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions


    Original     		PDF 26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248

    26N60Q

    Abstract: C2770 IXFH26N60Q
    Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM


    Original     		PDF 26N60Q O-247 728B1 123B1 728B1 065B1 26N60Q C2770 IXFH26N60Q

    26N60Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR


    Original     		PDF 26N60Q 26N60Q O-247 O-268 O-268

    26N60Q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600


    Original     		PDF 26N60Q 26N60Q O-247 O-268 O-264 O-268

    spf560

    Abstract: 26N60Q
    Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 26N60Q ISOPLUS247TM spf560 26N60Q

    26N60Q

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V


    Original     		PDF 26N60Q 26N60Q O-247 O-268 O-268AA

    26N60

    Abstract: 28n60
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


    Original     		PDF 26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60

    26n60q

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM


    Original     		PDF 26N60Q O-247 728B1 26n60q

    26n60

    Abstract: 26N60Q k 2134
    Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 26N60Q 247TM O-264 728B1 26n60 26N60Q k 2134

    5007a

    Abstract: No abstract text available
    Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 16N80P 16N80PS O-247 26N60P 26N60P 26N60PS

    transistor 12n60c

    Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
    Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design


    Original     		PDF ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT


    OCR Scan     		PDF 26N60/IXFT 26N60 28N60 O-247

    12N60c equivalent

    Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
    Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t


    OCR Scan     		PDF ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q