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    26N50P Search Results

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    26N50P Price and Stock

    Littelfuse Inc IXFH26N50P

    MOSFET N-CH 500V 26A TO247AD
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    DigiKey IXFH26N50P Tube 955 1
    • 1 $7.86
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    • 100 $4.87633
    • 1000 $4.07588
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    RS IXFH26N50P Bulk 8 Weeks 30
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    • 100 $6.3
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    Littelfuse Inc IXTQ26N50P

    MOSFET N-CH 500V 26A TO3P
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    DigiKey IXTQ26N50P Tube 262 1
    • 1 $7.21
    • 10 $7.21
    • 100 $4.44267
    • 1000 $3.64775
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    Newark IXTQ26N50P Bulk 300
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    • 1000 $4.18
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    Littelfuse Inc IXFP26N50P3

    MOSFET N-CH 500V 26A TO220AB
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    DigiKey IXFP26N50P3 Tube 250 1
    • 1 $8.65
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    • 100 $8.65
    • 1000 $4.59712
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    Newark IXFP26N50P3 Bulk 300
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    RS IXFP26N50P3 Bulk 8 Weeks 50
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    Littelfuse Inc IXTT26N50P

    MOSFET N-CH 500V 26A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT26N50P Tube 205 1
    • 1 $11.08
    • 10 $11.08
    • 100 $6.61033
    • 1000 $5.26149
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    Newark IXTT26N50P Bulk 300
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    Littelfuse Inc IXFH26N50P3

    MOSFET N-CH 500V 26A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH26N50P3 Tube 92 1
    • 1 $7.75
    • 10 $7.75
    • 100 $4.80133
    • 1000 $4.00149
    • 10000 $4.00149
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    RS IXFH26N50P3 Bulk 8 Weeks 30
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    Find more 26N50P price and stock on Findchips.com

    26N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26n50

    Abstract: IXFH .26n50 PLUS220SMD
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 26N50P 26N50PS 26n50 IXFH .26n50 PLUS220SMD

    PLUS220SMD

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 RDS on trr = = ≤ ≤ 500 V 26 A Ω 230 mΩ 200 ns Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 26N50P 26N50PS O-247) PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 26N50P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF ISOPLUS220TM 26N50P Isolated55 2-06-05-A

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 220TM 26N50P 02-09-06-B

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = ID25 = RDS on ≤ ≤ trr IXFH 26N50P IXFV 26N50P IXFV 26N50PS N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 26N50P 26N50PS

    IXTQ26N50P

    Abstract: PLUS220SMD 26n50ps b5237
    Text: Advanced Technical Information IXTQ 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = 500 V = 26 A ≤ 230 mΩ Ω RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 26N50P 26N50PS 15noCoulombs 26N50P IXTQ26N50P PLUS220SMD 26n50ps b5237

    26N50P

    Abstract: IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p
    Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 26N50P 26N50PS 26N50P IXTV26N50PS O-268 IXTQ26N50P ixtq-26n50p IXTQ 26N50P IXTV26N50PS PLUS220SMD ixtt26n50p

    t26n

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF 220TM 26N50P 02-09-06-B t26n

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFH 26N50P IXFT 26N50P RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode = = ≤ ≤ 500 V 26 A Ω 230 mΩ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500


    Original     		PDF 26N50P 26N50P O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS PolarHVTM Power MOSFET VDSS ID25 = = ≤ RDS on 500 26 230 V A Ω mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR


    Original     		PDF 26N50P 26N50PS PLUS220 26N50P IXTV26N50PS O-268

    5007a

    Abstract: No abstract text available
    Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTC 26N50P VDSS = 500 V = 13 A ID25 Ω RDS on = 260 mΩ Electrically Isolated Tab, N-Channel Enhancement Mode, Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V


    Original     		PDF 26N50P

    t26n

    Abstract: 7V24
    Text: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF ISOPLUS220TM 26N50P 2-06-05-A t26n 7V24

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p