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IXYS Corporation IXTH26N60P MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTH26N60P		156			1 $8.94 10 $7.66 100 $6.51 1000 $4.65 10000 $4.65	Buy Now
TTI	IXTH26N60P	Tube			300	1 - 10 - 100 - 1000 $4.65 10000 $4.65	Buy Now
IXYS Corporation IXFH26N60P MOSFETs 600V 26A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH26N60P					1 $8.78 10 $8.25 100 $5.48 1000 $4.7 10000 $4.69	Get Quote
TTI	IXFH26N60P	Tube			300	1 - 10 - 100 - 1000 $4.88 10000 $4.69	Buy Now
IXYS Corporation IXTQ26N60P MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ26N60P					1 - 10 - 100 $4.99 1000 $3.79 10000 $3.06	Get Quote
IXYS Corporation IXFT26N60P MOSFETs 600V 26A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFT26N60P					1 - 10 - 100 - 1000 $7.05 10000 $7.05	Get Quote
TTI	IXFT26N60P	Tube			300	1 - 10 - 100 - 1000 $5.65 10000 $5.65	Buy Now
IXYS Corporation IXTT26N60P MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT26N60P					1 - 10 - 100 - 1000 $7.68 10000 $7.68	Get Quote
TTI	IXTT26N60P	Tube			300	1 - 10 - 100 - 1000 $6.16 10000 $6.16	Buy Now

26N60P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
26N60P Abstract: PLUS220SMD Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol	Original	PDF	26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD
26n60 Abstract: 26N60P PLUS220SMD Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	PDF	26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD
max2678 Abstract: No abstract text available Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	PDF	26N60P 26N60PS O-247 O-268 PLUS220 max2678
Untitled Abstract: No abstract text available Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol	Original	PDF	26N60P 26N60PS O-247 405B2 26N60P PLUS220
DSA003703 Abstract: 26n60 Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	PDF	26N60P 26N60PS O-247 O-268 DSA003703 26n60
26N60P Abstract: TO-248 Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	PDF	26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248
5007a Abstract: No abstract text available Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	PDF	26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS	Original	PDF	16N80P 16N80PS O-247 26N60P 26N60P 26N60PS
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	PDF	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
16N80P Abstract: 26N60P PLUS220SMD siemens Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS	Original	PDF	16N80P 16N80PS O-247 26N60P 26N60P 26N60PS 16N80P PLUS220SMD siemens
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
IXFH26N60P Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60 Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr 26N60P 26N60P 26N60P 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS O-247) 26N60P 26N60P 26N60PS O-247 IXFH26N60P IXFV26N60P 26n60 26N60PS IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr 26N60P 26N60P 26N60P 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS 26N60P 26N60P 26N60PS O-247 PLUS220SMD