263AB Search Results

Contextual Info: GIB2401 thru GIB2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-263AB • Ultrafast recovery time K • Low switching losses, high efficiency • High forward surge capability

FT1614

Contextual Info: FT16.G HIGH COMMUTATION TRIAC On-State Current Gate Trigger Current 16 Amp £ 50 mA Off-State Voltage 400 V ÷ 800 V TO-263AB D2PAK FEATURES • Glass/passivated die junctions • Medium current Triac • Low thermal resistance • Ideal for automated placement

JESD22-B102

Abstract: J-STD-002 U20xCT 89017
Contextual Info: New Product U B 20BCT thru U(B)20DCT Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction TO-263AB TO-220AB • Ultrafast recovery time K • Soft recovery characteristics • Low switching losses, high efficiency

75631P

Abstract: AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet November 2000 File Number 4958 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Title UFA 631 Packaging JEDEC TO-220AB SOURCE DRAIN GATE UFA 631 ST bjec 3A, 0V, 40 m, ann JEDEC TO-263AB DRAIN FLANGE) GATE SOURCE

Contextual Info: 2N7002 DMOS Transistors N-Channel TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1. Gate 2. Source 3. Drain 0.037 (0.95) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125)

Contextual Info: FEPB16AT thru FEPB16JT Dual Ultrafast Plastic Rectifier Reverse Voltage 50 to 600V Forward Current 16A TO-263AB 0.411 10.45 0.190 (4.83) 0.380 (9.65) 0.160 (4.06) Mounting Pad Layout 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN Dimensions in inches and (millimeters)

Contextual Info: GFB50N03 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 13mΩ ID 50A H C N ct E ET u R d T NF ro P New GE TM D TO-263AB G 0.160 (4.06) 0.190 (4.83) 0.380 (9.65) 0.420 (10.67) 0.045 (1.14) 0.055 (1.40) 0.21 (5.33) Min. S D Mounting Pad Layout 0.320 (8.13)

2n4403

Contextual Info: MMBT4403 Small Signal Transistor PNP t c u rod P New TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125) max. .004 (0.1)

Contextual Info: VBT1545CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses

Contextual Info: New Product VBT6045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses

Contextual Info: MBR F,B 16H35 thru MBR(F,B)16H60 www.vishay.com Vishay General Semiconductor Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AC FEATURES ITO-220AC 2 2 1 1 MBR16Hxx MBRF16Hxx PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB

Contextual Info: VS-16TTS.SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2 Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and JEDEC-JESD47 TO-263AB D2PAK 1 Cathode

Contextual Info: VB60100C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses TO-263AB • High efficiency operation

Contextual Info: New Product VBT2045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses

Contextual Info: VB20120SG-M3 www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses TO-263AB • High efficiency operation

Contextual Info: VBT2060C-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation

76423P

Abstract: 76423S HUFA76423P3 HUFA76423S3S HUFA76423S3ST TB334 63E13
Contextual Info: HUFA76423P3, HUFA76423S3S Data Sheet November 2000 File Number 4980 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76423P3 HUFA76423S3S

76633s

Abstract: 76633p AN9321 AN9322 HUF76633P3 HUF76633S3S HUF76633S3ST TB334 mosfet 407
Contextual Info: HUF76633P3, HUF76633S3S Data Sheet October 1999 File Number 4693.3 38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76633P3 HUF76633S3S

76443P

Abstract: AN7254 AN9321 AN9322 HUF76443P3 HUF76443S3S HUF76443S3ST TB334
Contextual Info: HUF76443P3, HUF76443S3S Data Sheet October 1999 File Number 4784 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76443P3 HUF76443S3S

D2Pak Package dimensions

Abstract: D2Pak Package TO-263AB weight D2PAK TO-263AB D2-PAK package
Contextual Info: TO-263AB/D2PAK Package Dimensions TO-263AB/D2PAK FS PKG Code 45 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 1.4378 2000 Fairchild Semiconductor International August 1998, Rev. A

RFP70N06

Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω

75631p

Abstract: 75631 AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST Data Sheet August 2000 File Number 4720.3 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features

HUF75939P3

Abstract: AN7254 AN7260 AN9321 AN9322 HUF75939S3ST TB334
Contextual Info: HUF75939P3, HUF75939S3ST Data Sheet December 2000 File Number 5008 22A, 200V, 0.125 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) • Ultra Low On-Resistance

76439S

Abstract: HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334
Contextual Info: HUFA76439P3, HUFA76439S3S Data Sheet January 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76439P3 HUFA76439S3S • Ultra Low On-Resistance