Untitled
Abstract: No abstract text available
Text: Reverse Mountable 1205 3212 HT-260 Series Harvatek Surface Mount LED Data Sheet HT-260 Series Official Product Product: HT-260 Series Data Sheet No. Tentative Product * HT-260 Series Specifications are subject to change without notice. Data and
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HT-260
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Untitled
Abstract: No abstract text available
Text: Top-emitting 1205 Reverse Mountable HT-260 Series Harvatek Surface Mount LED Data Sheet HT-260 Series Official Product Product: HT-260 Series Data Sheet No. Tentative Product * HT-260 Series Specifications are subject to change without notice. Data and
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HT-260
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semikron skke 260
Abstract: semikron skkd 600 semikron skkd 80 semikron skke 20 semikron skke 80 SKKD 80 semikron skke
Text: VRSM VRRM IFRMS maximum values for continuous operation 315 A 410 A 315 A 410 A IFAV (sin. 180; Tcase = 80 °C) 260 A 200 A V V 200 A 260 A 900 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 SEMIPACK 3 Rectifier Diode Modules SKKD 201 SKKE 201 SKKD 260 SKKE 260
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ird 201
Abstract: C260A Diode semikron skke semikron skkD SKKD SkkE 1200 semikron skkd 600 semikron skke 260
Text: VRSM VRRM IFRMS maximum values for continuous operation 315 A 410 A 315 A 410 A IFAV (sin. 180; Tcase = 80 °C) 260 A 200 A V V 200 A 260 A 900 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 SEMIPACK 3 Rectifier Diode Modules SKKD 201 SKKE 201 SKKD 260 SKKE 260
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semikron skke
Abstract: Diode semikron skke rectifier diode m2 1200 semikron skkd 600 ird 201 semikron skke 260 skkd skmd 201/08 semikron skkd 80 semikron skke 80
Text: VRSM VRRM IFRMS maximum values for continuous operation 315 A 410 A 315 A 410 A IFAV (sin. 180; Tcase = 85 °C) 260 A 200 A V V 200 A 260 A 900 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 SEMIPACK 3 Rectifier Diode Modules SKKD 201 SKKE 201 SKKD 260 SKKE 260
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DD260N08
Abstract: EUPEC DD 600 N mechanical arm powerblock dd eupec powerblock ND
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 260 N, DD 261 N ND 260 N, ND 261 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 260 N, ND 260 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte
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DD260N8
DD260N08
EUPEC DD 600 N
mechanical arm
powerblock dd
eupec powerblock ND
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ED-511YGBU
Abstract: No abstract text available
Text: ED-511YGBU GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Back Light Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer 260 p-Electrode 115 255 n-GaP Substrate Emission area 260 n-Electrode
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ED-511YGBU
ED-511YGBU
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Untitled
Abstract: No abstract text available
Text: ED-011RD GaP/GaP LED Chips Red Features : Typical Applications : • GaP epi wafer • Lamp • Display Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer p-Electrode 120 260 265 n-GaP Substrate Emission area 260 n-Electrode
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ED-011RD
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ED 260
Abstract: No abstract text available
Text: ED-511YGB GaP/GaP LED Chips Greenish-Yellow Features : Typical Applications : • GaP epi wafer • Back Light Outline Dimensions : Unit: um 260 245 p-Electrode p-GaP epi layer n-GaP epi layer 260 p-Electrode 115 255 n-GaP Substrate Emission area 260 n-Electrode
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ED-511YGB
ED 260
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ED-011IRA
Abstract: No abstract text available
Text: ED-011IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to Si detector • Remote Controller • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 260 260
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ED-011IRA
105um
245um
280um
260um
260um
Electro-Opt00
ED-011IRA
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Untitled
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA118B/260-S2-PF DATA SHEET DOC. NO : QW0905- LA118B/260-S2-PF REV. : A DATE : 17 - Mar. - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA118B/260-S2-PF
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LA118B/260-S2-PF
QW0905-
LG2640/S63/H-PF
54TYP
MIL-STD-202:
MIL-STD-750:
MIL-STD-883:
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LYG2662
Abstract: 260I
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA118B/260-I DATA SHEET DOC. NO : QW0905- LA118B/260-I REV. : D DATE : 12 - Jul - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA118B/260-I Package Dimensions 8.81
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LA118B/260-I
QW0905-
LG2640/S63
LG2640-1
LYG2662
54TYP
LYG2662
260I
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LYG2662
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA118B/260-I-PF DATA SHEET DOC. NO : QW0905- LA118B/260-I-PF REV. : A DATE : 02- Feb - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA118B/260-I-PF Page 1/6
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LA118B/260-I-PF
QW0905-
LG2640/S63
LG2640-1
LYG2662
54TYP
LYG2662
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Untitled
Abstract: No abstract text available
Text: LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY Pb Lead-Free Parts LA185B-1/260-B-PF DATA SHEET DOC. NO : QW0905-LA185B-1/260-B-PF REV. A DATE : : 21 - Jun. - 2008 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA185B-1/260-B-PF
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LA185B-1/260-B-PF
QW0905-LA185B-1/260-B-PF
54TYP
LYG2662/R1/H-PF
MIL-STD-202:
MIL-STD-750:
MIL-STD-883:
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Untitled
Abstract: No abstract text available
Text: ED-011IRC GaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • GaAs/GaAs wafer • Good spectral matched to si detector • Peripheral Device • Photocoupler • Photointerrupter Outline Dimensions : Unit: um 245 260 260 p-Electrode p-GaAs epi layer
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ED-011IRC
105um
245um
280um
260um
260um
02OPTOELECTRONIC
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Untitled
Abstract: No abstract text available
Text: InGaN-High Brightness Lumineszenzdiode 527 nm InGaN High Brightness Light Emitting Diode (527 nm) F 0287B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 1.3 mW @ 20 mA (im 5mm Radial Gehäuse) • Chipgröße 260 x 260
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0287B
527nm
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ED-211IR
Abstract: 110um 880nm
Text: ED-211IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 260 245 n-Electrode n-AlGaAs epi layer n-Electrode 255 110 260 p-AlGaAs epi layer Emission area p-Electrode
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ED-211IR
110um
245um
255um
260umx
260um
ED-211IR
110um
880nm
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0308a
Abstract: No abstract text available
Text: GaN-Lumineszenzdiode 466 nm GaN Light Emitting Diode (466 nm) F 0308A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 1mW @ 20 mA (im 5mm Radial Gehäuse) • Chipgröße 260 x 260 • Wellenlänge 428 nm (blau)
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Untitled
Abstract: No abstract text available
Text: ●●●●●●●●●●● 上面発光・単色タイプ CL-260 Series CL-260 Series Mono-Color Upward-Lighting Type ●絶対最大定格 Absolute Maximum Rating Pd mW Product code CL-260 UR,HRを除く ( Except UR and HR) CL-260UR/HR IF (mA) 65
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CL-260
CL-260
CL-260UR/HR
30msecã
30msec
CL-260URâ
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CL-260HR
Abstract: No abstract text available
Text: 超小型裏面実装 LED CL-260 シリーズ Miniature Chip LED CL-260 Series • Ultra Small Size ■ Bottom Surface Mountable Type ●絶対最大定格/Absolute Maximum Rating Pd mW Series CL-260 ( UR,HRを除く Except UR and HR) CL-260UR/HR 3.4(L)x1.25(W)×1.1
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CL260
CL260
CL260UR/HR
CL260R
CL260D
CL260Y
CL260YG
CL260G
CL260FG
CL-260HR
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semikron skkd 131
Abstract: No abstract text available
Text: se MIKRDN SEMIPACK 3 Rectifier Diode Modules Ifrms maximum values for continuous operation 315 A I 410 A | 315 A I 410A V rsm V rrm 200 A Ifav (sin. 180; T case = 80 °C) 260 A 200 A SKKD 201 SKKE 201 SKKD 260 SKKE 260 SKMD 2601) 260 A V V 900 800 SKKD 201/08
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SKMT250
semikron skkd 131
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AFM02N8-32
Abstract: 02N5 02N50 AF035P1-00
Text: MMICs GaAs FETs S p i ?' Low Noise and General Purpose FETs Ta = +25°C Fmin Bias Power Bias Vds Ids (V) (mA) P1 dB (dBm) Thermal Resistance (C/W) Max Dissipated Power (mW) Package Style 30 13.0 260 400 Chip 2 30 11.5 260 400 Chip 15.0 4 30 14.5 260 400
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02N5-00
AFP02N2-00
AFP02N8-00
AFM02N5-55/56
AFP02N2-55/56
AFP02N8-55/56
AFM02N8-32
-55Z-56
AF035P1-00
AFM06P2-00
AFM02N8-32
02N5
02N50
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Untitled
Abstract: No abstract text available
Text: SEMIKRDN V rsm V rrm SEMIPACK 3 Rectifier Diode Modules Ifrm s maximum values for continuous operation 315 A 410 A j | 315 A | 410A Ifav (sin. 180; Tease ~ 80 ' C) 200 A 260 A 800 SKKD 2 01 /08 SKKD 260/08 SKKE 201 /08 1300 1200 SKKD 201 /12 SKKD 260 /12
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semikron skke 260
Abstract: SKKE201 B166 Diode semikron 103
Text: SEMIKRON INC 3bE ]> m Ô13bb71 G0D2ESÔ b « S E K G -p.^.oo, Vrsm Vrrm Ifrms maximum values for continuous operation 315 A | 410 A | 315 A | 410 A Ifav (sin. 180; case = 80 C) 260 A 200 A 260 A V 200 A 800 SKKD 201/08 SKKD 260/08 SKKE 201/08 1200 SKKD 201/12
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3/180F
P16/200
SKKD201
semikron skke 260
SKKE201
B166
Diode semikron 103
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