42-DL313
Abstract: No abstract text available
Text: 42-DL313 Version : A.004 Issue Date : 2004/06/17 File Name : SP-DL313-A.004.doc Total Pages : 6 Optical Fiber Receiving IC 新竹市展業一路九號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 42-DL313 9-7F-1, Prosperity Road I, Hsin-Chu, Taiwan, R.O.C. Tel：886-3-5645656
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42-DL313
SP-DL313-A
Tel886-3-5645656
Fax886-3-5645626
42-DL313
42-DL313-A
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LSI SAS 2208
Abstract: jrc 4026 JRC 3414 jrc 4608 ali 3328 1055 CQM1 NJU6575A NJU6575AC SEG22
Text: m - JÈ r NJU6575A PRELIMINARY BIT MAP LCD D R IVER G EN E R A L D ESC R IPTIO N The NJU6575A is a bit map LCD driver to display graphics or characters. It contains 4,422 bits display data RAM, microprocessor inter face circuits, instruction decoder, 134-segment and 33-common
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NJU6575A
NJU6575A
134-segment
33-common
33-driver
LSI SAS 2208
jrc 4026
JRC 3414
jrc 4608
ali 3328
1055
CQM1
NJU6575AC
SEG22
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7924
Abstract: SB84 SC109 7457 frequency divider transistor 238 8441 gac 748 ROW130 4944 SB 7457 601 Frequency divider 6800-PARALLEL
Text: SSD1339 Advance Information 132RGB x 132 with 2 smart Icon lines Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com
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SSD1339
132RGB
7924
SB84
SC109
7457 frequency divider
transistor 238 8441
gac 748
ROW130
4944 SB
7457 601 Frequency divider
6800-PARALLEL
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a42 a92 transistor
Abstract: a92 TRANSISTOR transistor A92 A92 at
Text: A92 A92 Silicon PNP Epitaxial Transistor Description: The A92 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone Features: ●High voltage: VCEO=300V ●Complementary to A42 Chip Appearance Chip Size
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600um
600um
127um
127um
110um
110um
-200V,
a42 a92 transistor
a92 TRANSISTOR
transistor A92
A92 at
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TRANSISTOR A42
Abstract: a42 TRANSISTOR a42 a92 transistor
Text: A42 A42 Silicon NPN Epitaxial Transistor Description: The A42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone Features: ●High voltage: VCEO=300V ●Complementary to A92 Chip Appearance Chip Size
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600um
600um
127um
127um
110um
110um
TRANSISTOR A42
a42 TRANSISTOR
a42 a92 transistor
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9015B
Abstract: 9014b C 9015b a3101 C 9014B
Text: 9015B 9015B Silicon PNP Epitaxial Transistor Description :The 9015B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9014B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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9015B
9015B
9014B
350um
350um
110um
110um
100um
100um
9014b
C 9015b
a3101
C 9014B
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9013b
Abstract: No abstract text available
Text: 9012B 9012B Silicon PNP Epitaxial Transistor Description :The 9012B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um
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9012B
9012B
9013B
490um
490um
110um
110um
9013b
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BC817A
Abstract: BC807A
Text: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC817A
BC817A
BC807A
440um
440um
110um
110um
BC807A
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Untitled
Abstract: No abstract text available
Text: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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440um
440um
110um
110um
-50mA
-500mA
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Z117
Abstract: 331 y55 z132 Y48311 y 718
Text: HM18TS402 HM18TS402 402Ch. , 64 Gray Scale Color TFT LCD SOURCE DRIVER - 1- Preliminary HM18TS402 1. OVERVIEW The HM18TS402 is a 402 channel output, ultra low power, signal source column driver for a TFT LCD panel. This device has a digital-to-analog converter using 5 external reference voltages to display 262,144 colors.
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HM18TS402
402Ch.
HM18TS402
18-bit(
64-gray
10MHz
Z117
331 y55
z132
Y48311
y 718
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Untitled
Abstract: No abstract text available
Text: Laser Diodes CUSTOMER : Not Fixed DATE : 2013. 06. 19. Rev : REV. 2 SPECIFICATIONS FOR APPROVAL Vertical NUV Chip MODEL NAME : LEUV-V514A6 RoHS Compliant Halogen Compliant DESIGNED CHECKED APPROVED 2013.06.19 2013.06.19 2013.06.19 1 Germany & Other Countries
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LEUV-V514A6
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OPA9420
Abstract: No abstract text available
Text: Infrared LED Chip OPA9420 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage
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OPA9420
100mA
110um
OPA9420
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Untitled
Abstract: No abstract text available
Text: OPA8528H Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage
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OPA8528H
--------------------110um
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HP83000
Abstract: 0.7 um CMOS process parameters Nitto 9850 JEDEC20 G226 Nitto MP8000 MP8000 ITS9000 atmel PLCC bottom "marking" MG2RTP
Text: Qualpack MG2RT/MG2RTP Qualification Package MG2RT / MG2RTP 0.5 µm Radiation Tolerant SCMOS3 Technology MG2RT / MG2RTP 0.5 µm SCMOS3 1999 August TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. 0 – 1999 August 1 Qualpack MG2RT/MG2RTP 1. General Information . 3
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9015A
Abstract: No abstract text available
Text: 9014A 9014A Silicon NPN Epitaxial Transistor Description: The 9014A is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015A Chip Appearance Chip Size 330umx330um Chip Thickness 210±20um
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330um
330um
110um
110um
100mA
9015A
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9013B
Abstract: No abstract text available
Text: 9013B 9013B Silicon NPN Epitaxial Transistor Description :The 9013B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um
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9013B
9013B
9012B
490um
490um
110um
110um
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BC807A
Abstract: BC817A
Text: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
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BC807A
BC807A
BC817A
440um
440um
110um
110um
BC817A
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TCS 3414
Abstract: JRC 3414 JRC 2521 NJU6561 APA 3414 222M SE 2921 battery SEG22 Jrc 3066
Text: A NJU6561 PRELIM IN ARY BIT MAP LCD DRIVER • GENERAL DESCRIPTION The NJU6561 is a bit map LCD driver to display graphics or characters. It contains 3.920 bits display data RAM, microprocessor inter face circuits, instruction decoder, 80-segment and 49-common
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NJU6561
80-segment
49-common
49-driver
16x16
NJU6561
47I46
TCS 3414
JRC 3414
JRC 2521
APA 3414
222M SE
2921 battery
SEG22
Jrc 3066
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JRC 2135
Abstract: jrc 319 84 jrc regulator JRC 2240 JRC 2228
Text: JR C NJ U6 577 PR E LIM IN A R Y BIT MAP LCD DRIVER • GENERAL DESCRIPTION The NJU6577 is a bit map LCD driver to display graphics or characters. It contains 4,240 bits display data RAM, microprocessor inter face circuits, instruction decoder, 80-segment and 53-common
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NJU6577
80-segment
53-common
53-driver
U6577
COM10
COM12
JRC 2135
jrc 319
84 jrc regulator
JRC 2240
JRC 2228
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transistor bc846
Abstract: BC846 BC856
Text: BC846 BC846 Silicon NPN Epitaxial Transistor Description :The BC846is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC856 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um
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BC846
BC846
BC846is
BC856
350um
350um
110um
110um
100um
100um
transistor bc846
BC856
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ED-211IR
Abstract: 110um 880nm
Text: ED-211IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 260 245 n-Electrode n-AlGaAs epi layer n-Electrode 255 110 260 p-AlGaAs epi layer Emission area p-Electrode
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ED-211IR
110um
245um
255um
260umx
260um
ED-211IR
110um
880nm
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OPA8509
Abstract: No abstract text available
Text: OPA8509 Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage
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OPA8509
--------------------110um
OPA8509
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OPA9445F
Abstract: No abstract text available
Text: Infrared LED Chip OPA9445F GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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OPA9445F
100mA
110um
--------------------------11mil
--------------------------11mil
OPA9445F
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110um
Abstract: OPA9423
Text: Infrared LED Chip OPA9423 AlGaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy Symbol Parameter 3. Electro-Optical VF Characteristics Forward Voltage Reverse Voltage Power Wavelength (N Type)
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OPA9423
110um
10mil
110um
OPA9423
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