BC817A
Abstract: BC807A
Text: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
|
Original
|
PDF
|
BC817A
BC817A
BC807A
440um
440um
110um
110um
BC807A
|
Untitled
Abstract: No abstract text available
Text: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
|
Original
|
PDF
|
440um
440um
110um
110um
-50mA
-500mA
|
BC807A
Abstract: BC817A
Text: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
|
Original
|
PDF
|
BC807A
BC807A
BC817A
440um
440um
110um
110um
BC817A
|
5401 transistor
Abstract: 5401 5551 transistor transistor 5401
Text: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance
|
Original
|
PDF
|
VCEO150V
440um
440um
110um
110um
-120V,
5401 transistor
5401
5551 transistor
transistor 5401
|
5551
Abstract: 5551 transistor 5551 datasheet 5401 555-1
Text: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance
|
Original
|
PDF
|
VCEO160V
440um
440um
110um
110um
5551
5551 transistor
5551 datasheet
5401
555-1
|
Untitled
Abstract: No abstract text available
Text: BC817 BC817 Silicon NPN Epitaxial Transistor Description: The BC817is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
|
Original
|
PDF
|
BC817
BC817is
BC807
440um
110um
|
Untitled
Abstract: No abstract text available
Text: BC807 BC807 Silicon PNP Epitaxial Transistor Description: The BC807is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC817 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
|
Original
|
PDF
|
BC807
BC807is
BC817
440um
110um
|
9013A
Abstract: No abstract text available
Text: 9013A 9013A Silicon NPN Epitaxial Transistor Description: The 9013A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um
|
Original
|
PDF
|
440um
440um
110um
110um
500mA
9013A
|