25FIM Search Results

Contextual Info: HYM72V32756AT8 32Mx72, 32Mx8 based, PC100 DESCRIPTION The HYM72V32756T8 Series are 32Mx72bits Synchronous DRAM Modules. The modules are composed of nine 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2K bit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed

Contextual Info: P35-4241 Applications • Signal routing and 2 bit sw itched line phase shifter from 2G H z to 5G H z for P hased A rray Radars. • C om bined w ith P35-4240, to prod uce 4 b it sw itched line phase shifter from 2G H z to 5G H z • Sw itched Filter A ttenuator N etw orks from 2G H z to

D 2058

Abstract: BIT 3195 G 3474
Contextual Info: SEDI 741 • DESCRIPTION The SED1741 is a 100 50 x 2 dot matrix LCD common (row) driver for driving high-capacity LCD panels at duty cycles higher than 1/100 (up to 1/500). The LSI features a wide range of LCD drive voltages. The device uses a daisy-chain enable system which decreases power consumption and eliminates the need for

GE2000

Contextual Info: DO NOT SCALE DIMENSIONS *ä METRIC THIRD ANGLE PROJECTION IN mm 9, 0 1 0 ,5 1,0 NOTES: 0 ,7 S =F=^T=F T 2 , 54 ï î— e n — î— Y BMW I - T 4 , 0 T 2 x2 ,5 4 = W H - - > 5, 03 l S Œ 3 A PHOSPHORBRONZE. A AT AREA A A 5,0 -/im Sn/Pb 93 / 7 MIN. A Q U A N T I T Y PER P A C K A G E 2000 PCS.

hp 5082 4204 pin photodiode

Abstract: HP 5082-4220 HP 5082-4203 5082-4207 5082-4220 hp pin diode 5082-4200 series 5082-4204 HP 4220 pin photodiode HP 5082 4207 HP 5082-4207
Contextual Info: Ü3 HEWLETT-PACKARD-. CMPNTS 4 4 4 7 5 8 4 H E W L E T T - P AC KA RD . m ^^4447504 8 3 D 0 4 41 8 C M PNTS HEW LETT PACKARD DDOMMlö S D f ' <J{ -_£l PIN PHOTODIODES 5082-4200 SERIES TECHNICAL DATA Features JANUARY 1986 Active area: 1mm Dlam 5082-42071 T a|

fzh 115

Abstract: fzh 111 FZH 121 fzh 171 A1203 JS9P08-AS
Contextual Info: MICROWAVE POWER GaÀs FET TOSHIBA MICROWAVE SEMICONDUCTORS JS9P08-AS TECHNICAL DATA FEATURES: • H IG H POWER B H IG H GAIN P1dB = 24.0 dBm @ f = 23 GHz G 1dB = 9.5 dB @ f = 23 GHz ■ C H IP FORM RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB

Contextual Info: P35-4104 GaAs M IC BROADBAND AMPIIFIER Features • • • • • • Ultra broadband High gain Cascadable 12dB output power capability Input and output matched to 50Q Surface mount package 0.05 - 3.0GHz Frequency Range Typical Performance MHz Inp ut/O u tpu t V S W R

INS420

Abstract: tabai espec ESS-630A photo transistor til 78 PC3-24-5 PCD3-24-1212 whs 73
Contextual Info: PCD3- * - * RELIABILITY DATA f i t í l t t - T — £ DWG No.C 136-57-01 APPD. CHK. DWG. H-TAiïE a ft, ?• A * 3 'm u t h / ' DENSEI-LAMBDA Mì/A ^ /'o o INDEX PAGE 1 . p$i5i7r'Vl/w “7 V ^ ':? ' Component Derating .

Amplifier type t thermocouple op07

Abstract: AV5A OP07CH strain gauge OP07 amplifier op07ah circuit op07 for thermocouple type k 0P-07EH strain gauge OP07 OP07EN8
Contextual Info: / r ^ É r/ u _ QP-07 TECHNOLOGY Precision Operational Amplifier m F€ATUR€S DCSCRIPTIOn • Guaranteed 2 5 max. Offset Voltage ■ Guaranteed O.ètAirC max. Offset Voltage Drift with Temperature ■ Excellent tO ^ V / M o n th max. Lo ng Term Stability

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 4 ,19 LOC ALL RIGHTS RESERVED. BY AMP INCORPORATED. CE STRAIGHT FIBER # DIST REVI SI ONS 16 LTR H THROU GH COLOR FIBER # REVI SE P ER DESCRIPTION DATE DUN APVD 0A00- 0213-98 16 A P R 9 8