25F80
Abstract: P 1000V diod 25F10 25F100 25F120 25F20 25F40 25F60 25FR10 25FR100
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-360-07 25F10 diod 25A 100V 70-360-15 25F100 diod 25A 1000V 70-360-23 25F120 diod 25A 1200V 70-360-30 25F20 diod 25A 200V
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25F10
25F100
25F120
25F20
25F40
25F60
25F80
25FR10
25FR100
25FR120
P 1000V diod
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1E14
Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,
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JANSR2N7292
FRF150R4
R2N72
1000K
1E14
2E12
FRF150R4
JANSR2N7292
Rad Hard in Fairchild for MOSFET
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Untitled
Abstract: No abstract text available
Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]
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SSC800-25
SSC1000-25
SSC800-25-24
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SSC1000-25
Abstract: SSC800-25
Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]
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SSC800-25
SSC1000-25
SSC800-25-24
SSC1000-25
SSC800-25
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PDF
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Untitled
Abstract: No abstract text available
Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]
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SSC800-25
SSC1000-25
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PDF
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SSC1000-25
Abstract: SSC800-25
Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]
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SSC800-25
SSC1000-25
SSC800-25-24
SSC1000-25
SSC800-25
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PDF
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SSC800-25
Abstract: No abstract text available
Text: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mArms]
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SSC800-25
SSC1000-25
SSC800-25-24
SSC800-25
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Untitled
Abstract: No abstract text available
Text: Digital DC/DC PMBus 25A Module ISL8270M Features The ISL8270M is a 25A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 25A of
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ISL8270M
ISL8270M
FN8635
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Untitled
Abstract: No abstract text available
Text: Digital DC/DC PMBus 25A Module ISL8270M Features The ISL8270M is a 25A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 25A of
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ISL8270M
ISL8270M
FN8635
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Untitled
Abstract: No abstract text available
Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)
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Si5411EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)
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Si5411EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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bridge rectifier 25a
Abstract: 9883
Text: GBI 25A . GBI 25M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 25A . GBI 25M Publish Data Features
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Untitled
Abstract: No abstract text available
Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)
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Si5411EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)
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Si5411EDU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYP53
BYP54
BYP53/54
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BYP54-800
Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Text: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYP53
BYP54
BYP53/54
BYP54-800
BYP53-800
BYP53-75
BYP54
hermetic press-fit diode
zetex MARKING CODE
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RFK25P10
Abstract: RFH25P "Harris Corporation 1998" RFK* Relay RFH25P08 RFH25P10 RFK25P08 TB334 rfh25
Text: [ /Title RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10 /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark RFH25P08, RFH25P10, RFK25P08, RFK25P10
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RFH25
RFH25P
RFK25P
RFH25P08,
RFH25P10,
RFK25P08,
RFK25P10
-100V
RFK25P10
RFH25P
"Harris Corporation 1998"
RFK* Relay
RFH25P08
RFH25P10
RFK25P08
TB334
rfh25
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5n06
Abstract: F1S25N06 302 s1b diode
Text: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB
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RFP25N06,
RF1S25N06SM
5N06S
O220AB
O263AB
5n06
F1S25N06
302 s1b diode
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998
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RFF70N06
RFF70N06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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PDF
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esad85
Abstract: No abstract text available
Text: ESAD85M-009 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD85M-009
esad85
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esad85
Abstract: No abstract text available
Text: ESAD85M-009R 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD85M-009R
esad85
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PDF
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ESAD85M-009
Abstract: No abstract text available
Text: ESAD85M-009 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD85M-009
ESAD85M-009
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PDF
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Untitled
Abstract: No abstract text available
Text: ESAD85M-009 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD85M-009
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