UNITRODE
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles
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bq4014/bq4014Y
32-pin
10-year
256Kx8
bq4014
152-bit
UNITRODE
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K6F2008S2E
Abstract: K6F2008S2E-F
Text: K6F2008S2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
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K6F2008S2E
256Kx8
K6F2008S2E-F
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Untitled
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
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bq4014
Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
BQ4014MB-120
BQ4014MB-85
bq4014Y
BQ4014YMB-85
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WED8L24257V
Abstract: DSP5630X
Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24257V
256Kx24
256Kx24
WED8L24257VxxBC
256Kx8
WED8L24257V
DSP5630x
2106xL
DSP5630X
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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Untitled
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M0818L1A 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview Features The N02M0818L1A is an integrated memory
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N02M0818L1A
256Kx8
N02M0818L1A
N02M0818L2A,
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Untitled
Abstract: No abstract text available
Text: CAT25AM02 2 Mb SPI Serial CMOS EEPROM Description The CAT25AM02 is a 2M−bit Serial CMOS EEPROM device internally organized as 256Kx8 bits. This features a 256−byte page write buffer and supports the Serial Peripheral Interface SPI protocol. The device is enabled through a Chip Select (CS) input. In
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CAT25AM02
CAT25AM02
256Kx8
CAT25AM02/D
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
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Untitled
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02M083WL1A 2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit Overview Features The N02M083WL1A is an integrated memory
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N02M083WL1A
256Kx8
N02M083WL1A
N02M0818L2A,
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29F200T
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
29F200T
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K6F2008U2E
Abstract: K6F2008U2E-EF55 K6F2008U2E-EF70 K6F2008U2E-YF55 K6F2008U2E-YF70 1024 256x8 SRAM
Text: K6F2008U2E Family CMOS SRAM Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft February 28, 2001 1.0 Finalize September 27, 2001 Final 2.0 Revise
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K6F2008U2E
256Kx8
55/Typ.
35/Typ.
K6F2008U2E-EF55
K6F2008U2E-EF70
K6F2008U2E-YF55
K6F2008U2E-YF70
1024 256x8 SRAM
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Untitled
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
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HY62U8200LST
Abstract: No abstract text available
Text: HY62V8200- I /HY62U8200-(I) Series 256Kx8bit CMOS SRAM DESCRIPTION FEATURES The HY62V8200-(I)/HY62U8200-(I) is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200-(I) / HY62U8200-(I) uses high performance CMOS process technology and
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HY62V8200-
/HY62U8200-
256Kx8bit
HY62U8200-
32pin
8x20mm
HY62U8200LST
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EDI88257CA
Abstract: EDI88512CA
Text: EDI88257CA White Electronic Designs 256Kx8 Monolithic SRAM FEATURES The EDI88257CA is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM. Access Times of 20, 25, 35, 45, 55ns Data Retention Function LPA Versions TTL Compatible Inputs and Outputs
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EDI88257CA
256Kx8
EDI88257CA
512Kx8
EDI88512CA.
256Kx8
EDI88257LPA,
MIL-PRF-38535.
EDI88512CA
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Untitled
Abstract: No abstract text available
Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
256Kx
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Untitled
Abstract: No abstract text available
Text: W D _ EDI8F8259C i Electronic Dettgn« Inc. i Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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EDI8F8259C
256Kx8
EDI8F8259C
256Kx4
theEDI8F8259C
EDI8F8259C20M6C
EDI8F8259C25M6C
EDI8F8259C30M6C
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Untitled
Abstract: No abstract text available
Text: WDÌ EDI8F8259C ELECTRONIC DESIGNS INC. • High Speed Two Megabit SRAM Module Features 256Kx8 Static RAM CMOS, Module The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a mutti-layered epoxy laminate FR4 substrate.
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EDI8F8259C
256Kx8
EDI8F8259C
256Kx4
EDI8F8259C20M6C
EDI8F8259C25M6C
EDI8F8259C30M6C
EDI8F8259C35M6C
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Untitled
Abstract: No abstract text available
Text: Preliminary l3C|4014/bC|4014 Y 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-proteddon during power-up/power-down cycles > Industry-standard 32-pin 256K x 8 pinout > Conventional SRAM operation; unlimited write cycles
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4014/bC
256Kx8
32-pin
10-year
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Untitled
Abstract: No abstract text available
Text: DPS256P8 Dense-Pac Microsystems. Inc. 256K X 8 CMOS SRAM MODULE O DESCRIPTION: The DPS256P8 is a fully static asynchronous Static Random Access M em o ry SRAM and is organized as 256KX8. The m odule consists o f eight 32K X 8 C M O S SRAMs surface m ounted to an epoxy lam inate (FR4) substrate.
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DPS256P8
DPS256P8
256KX8.
150ns
30A022-00
256KX8
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Untitled
Abstract: No abstract text available
Text: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic
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EDI8M8256C70/100/120PC
256Kx8
EDI8M8256C
2048K
32Kx8
120ns
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Untitled
Abstract: No abstract text available
Text: EDI8M8257C 90/100/120/150 Module The fu tu re . . . today, i ÄDWÄNKgE DIMFÛI^IMIÂTDÛINI 256Kx8 SRAM CMOS, High Speed Module Features The EDI8M8257C is a 2048K 256Kx8 bit High Speed Static RAM module constructed using two EDI88128C (128Kx8) Static RAMs In teadless chip
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EDI8M8257C
256Kx8
EDI8M8257C
2048K
EDI88128C
128Kx8)
128Kx8
32-pin,
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)
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AS29F200
256KX8/128Kx
256Kx8
AS29F200B-70TC
AS29F200B-70TI
AS29F200T-70TC
AS29F200T-70TI
AS29F200B-70SC
AS29F200B-70SI
AS29F200T-70SC
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3QA18
Abstract: 3UA18
Text: 256Kx8 ROM/32Kx8 SRAM Combo Memory DP50CM232-E M í C \i O S Y S T E M S DESCRIPTION: The DP50CM232-E is a combination memory chip consist of 2M-bit Read Only Memory organized as 256K words by 8 bits and a 256K-bit Static Random Access Memory organized as 32K words by 8 bits.
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256Kx8
ROM/32Kx8
DP50CM232-E
DP50CM232-E
256K-bit
3QA183-10
50CM232
3QA18
3UA18
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