CDP1822
Abstract: CDP1822D CD182 CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822E CDP1822EX
Text: CDP1822, CDP1822C S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822D
CD182
CDP1822CD
CDP1822CDX
CDP1822CE
CDP1822CEX
CDP1822E
CDP1822EX
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CDP1822CD
Abstract: CDP1822 CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX
Text: CDP1822, CDP1822C 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822CD
CDP1822CDX
CDP1822CE
CDP1822CEX
CDP1822D
CDP1822E
CDP1822EX
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cdp1822
Abstract: CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX cd18
Text: CDP1822, CDP1822C TM 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity
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CDP1822,
CDP1822C
256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822CD
CDP1822CDX
CDP1822CE
CDP1822CEX
CDP1822D
CDP1822E
CDP1822EX
cd18
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M410000002
Abstract: DL161 DL162 DL163 AM41DL1644DT
Text: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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Am41DL16x4D
Am29DL16xD
16-Bit)
8-Bit/256
69-Ball
M410000002
DL161
DL162
DL163
AM41DL1644DT
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X2444
Abstract: No abstract text available
Text: Kicnr Preliminary Information X24C44 256 Bit 1 6 x 1 6 Bit Serial Nonvolatile Static RAM FEATURES D E S C R IP T IO N • • • • The Xicor X24C44 is a serial 256 bit NOVRAM featuring a static RAM configured 1 6 x 1 6 , overlaid bit by bit with a nonvolatile E2PROM array. The X24C44 is fabricated
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X24C44
X24C44
X2444
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Untitled
Abstract: No abstract text available
Text: HM6207/HM6207H Series 1-Bit CMOS Static RAM 262144-Word x 1-Bit High Speed CMOS Static RAM The Hitachi HM6207 and HM6207H are high speed 256k static RAMs organized as 256-kword x 1-bit. They realize high speed access time 25/35/45ns and low power consumption,
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HM6207/HM6207H
262144-Word
HM6207
HM6207H
256-kword
25/35/45ns)
300-mil,
24-pin
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Untitled
Abstract: No abstract text available
Text: Ito Preliminary Information X24C44 256 Bit 16 x 16 Bit Serial Nonvolatile Static RAM FEATURES D E S C R IP T IO N • • • • The Xicor X24C44 is a serial 256 bit NOVRAM featuring a static RAM configured 1 6 x 1 6 , overlaid bit by bit with a nonvolatile E2PROM array. The X24C44 is fabricated
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X24C44
X24C44
X2444
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93L422
Abstract: P93U422 QQQ177S p4c422 data
Text: PERFORMANCE SEMICONDUCTOR 5ÜE 7Gb£?5T7 D 0 0 1 7 7 4 0Ô5 « P S C P93U422 HIGH SPEED 256 x 4 CMOS STATIC RAM FEATURES CMOS for Low Power — 440 mW Commercial — 495 mW (Military) • Universal 256 x 4 Static RAM ■ One part, the 93U422, replaces the following
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P93U422
7Gb55
D001774
93U422,
3422A
93L422A
93L422
70beSS7
00Q177A
93L422
P93U422
QQQ177S
p4c422 data
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CY7C123
Abstract: 7C123
Text: CY7C123 •* C Y P R E S S 256 X 4 Static RAM Features Functional D escription • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • High speed — 7 ns commercial — 1 0 ns (military) • Low power — 660 mW (commercial)
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CY7C123
300-mil
CY7C123
300-Mil)
CY7C123â
12DMB
24-Lead
15DMB
7C123
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Untitled
Abstract: No abstract text available
Text: HM6207/HM6207H Series 1-Bit CMOS Static RAM 262144-Word x 1-Bit High Speed CMOS Static RAM The Hitachi HM6207 and HM6207H are high speed 256k static RAMs organized as 256-kword x t-b it. They realize high speed access tim e 25/35/45ns and low power consumption,
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HM6207/HM6207H
262144-Word
HM6207
HM6207H
256-kword
25/35/45ns)
300-mil,
24-pin
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MM11011
Abstract: mm1101 1101a 1101 Static RAM MM1101A MM4250 m1101 1101A1
Text: MQS RAM s MM1101, MM11Q11, MM1101A, MM1101A1, MM1101A2, M M 42S0 256-Bit 2 5 6 x 1 Static RAM* general description The MM 1101 fam ily of fully decoded 256 word x 1-bit random access memories are monolithic MOS integrated circuits using silicon gate low threshold
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MM1101,
MM11Q11,
MM1101A,
MM1101A1,
MM1101A2,
256-Bit
MM1101A2
MM11011,
MM1101A1
MM11011
mm1101
1101a
1101 Static RAM
MM1101A
MM4250
m1101
1101A1
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X2444
Abstract: B04HX
Text: SEE » XICOR INC ^ 4 1 7 4 3 0003323 7?fl JÙEflT Preliminary Information X24C44 256 Bit Serial Nonvolatile Static RAM 1 6 x 1 6 Bit T -4 b -2 2 r3 7 FEATURES DESCRIPTION • • • • The Xicor X24C44 is a serial 256 bit NOVRAM featuring a static RAM configured 16x16, overlaid bit by bit with
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X24C44
X24C44
16x16,
X2444
B04HX
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MCM2112
Abstract: MC7400
Text: MCM2112A L/L2 /L4 MCM2112A P/P2/P4 Advance Information MOS N -C H A N N E L , S IL IC O N •G A T E 256 x 4-BIT STATIC RANDOM ACCESS MEMORY 256 x 4-BIT STATIC RANDOM ACCESS MEMORY T he M C M 2 1 12 A is a 2 56 x 4 -b it random access m em o ry fabricated
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MCM2112A
MCM2112
MC7400
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c1226a
Abstract: l7bl C1226
Text: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM F unctional D escription • 256 x 4 static RAM for con trol store in h igh -sp eed com p u ters • C M O S for op tim u m speed /p ow er T h e C Y 7 C 1 2 2 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d as 256 w o rd s
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CY7C122
c1226a
l7bl
C1226
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cdp1822
Abstract: No abstract text available
Text: S H A R R C I S D P 1 8 2 2 , S E M I C O N D U C T O R C D P 1 8 2 2 C 256-Word x 4-Bit LSI Static RAM August 1996 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys
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256-Word
CDP1822
CDP1822C
CDP1822.
CDP1822C
43D2271
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Untitled
Abstract: No abstract text available
Text: March 1987 DM10414/DM10414A 256 x 1 ECL Random Access Memory General Description Features The DM10414, DM10414A is a 256-word by 1-bit ECL ran dom access memory. The fully static memory is designed with active low chip selects and separate I/O pins. The 8
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DM10414/DM10414A
DM10414/DM10414A
DM10414,
DM10414A
256-word
DM10414
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X24C44I
Abstract: No abstract text available
Text: XiBE ADVANCED INFORMATION 0cc Dit 256 Blt Commercial X24C44 1C v1 fiq ii Industrial_ X24C44I_ 1 6 x 1 6 B lt Nonvolatile Static RAM FEATURES • Advanced CMOS Version of Xicor’s X2444 • 16 x 16 Organization • Single 5 Volt Supply
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X24C44
X24C44I_
X2444
X24C44,
X24C44I
X24C44I
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Untitled
Abstract: No abstract text available
Text: tl E ]> • 4 4 Tti2 0 3 0 0 2 1 D 7 S IflO ■ H I T S HM624257A Series - Preliminary 262,144-word x 4-bit High Speed CMOS Static RAM HITACHI/ LOGIC/ARRAYS/MEM The Hitachi HM624257A is a high speed 1 M Pin Arrangement Static RAM organized as 256-kword x 4-bit. I t _
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HM624257A
144-word
256-kword
GD21GA3
------------------------HM624257A
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA FCB61C251 This data sheet contains advance in form ation and specifications are subject to change w ith o u t notice. 262 144 X 1-BIT STATIC RAM GENERAL DESCRIPTION The FCB61C251 is a 256 K-bit static RAM memory organized as 262 144 words o f 1 bit each.
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FCB61C251
FCB61C251
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Untitled
Abstract: No abstract text available
Text: M^E D MATRA M H S „ Preview • 5ûbô4Sb = *^ = B ^ U 0005505 H S M=]5 ■ M M H S _ IIIÌM ÌIII January 1991 M 1 0 E 4 2 2 /M 1 0 0 E 4 2 2 DATA SHEET 256 x 4 ECL STATIC RAM FEATURES 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER
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KH/10
M10E422
M100E422
M10E422/100E422
G002S10
M10E422/100E422
10E422
10E422
100E422
10EspectoSonssupporttoth10Kand10KHcom
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HM624256
Abstract: hm624256lp static ram 4802
Text: HITACHI/ LOGIC/ARRAYS/PIEM STE 44TbS03 D HM624256 Series- G01bS27 5 T -4 6 -2 3 -1 4 262144-WORD x 4-BIT HIGH SPEED CMOS STATIC RAM The Hitachi HM624256 is a high sp ee d 1M static RAM organized a s 256-kword x 4-bit. It realizes high sp ee d a cc e ss
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HM624256
262144-WORD
256-kword
32-bit
HM624256,
400-mll
28-pln
hm624256lp
static ram 4802
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IR 10e
Abstract: No abstract text available
Text: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA
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KH/10
MM10E422
MM100E422
MM10E422/100E422
10E422
10E422
100E422
IR 10e
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HM6551-9
Abstract: No abstract text available
Text: ffì HARRIS U U S E M I C O N D U C T O R H M - 6 5 5 1 256 x 4 CMOS RAM February 1992 Features Description • Low Power Standby. 50|iW Max. The HM-6551 is a 256 x 4 static C M O S RAM fabricated using self-aligned silicon gate technology. Synchronous
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HM-6551
HM6551-9
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Untitled
Abstract: No abstract text available
Text: S MWS5101, MWS5101A H A R R IS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM August 1996 Features Description • In d u s try S tan d ard P ino u t T he M W S5101 and M W S 5 1 0 1 A are 256 word by 4-bit static random access m emories designed for use in memory
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MWS5101,
MWS5101A
256-Word
S5101
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