CDP1822C Search Results

Contextual Info: CDP1822 £S H A R R IS S E M I C O N D U C T O R 256-W ord x 4-Bit LSI Static RAM February 1992 Features • Description L o w O p e ra tin g C u rre n t The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys­

Contextual Info: High-Reliability CMOS LSI Devices CDP1822C/3 High-Reliability C M O S 256-W ord by 4-Bit LSI Static Random-Access Mem ory For Applications in Aerospace, Military, and Critical Industrial Equipment Features: • Interfaces directly with CDP1302 microprocessor

cdp1822cd

Abstract: CDP-1802 34604 DG55C
Contextual Info: G E SOLID STATE 17E D • 3â7SGai DG55CH3 ■ High-Reliability CM O S LSI Devices CDP1822C/3 'T-Mk-Z3>-Q2> High-Reliability CMOS 256-Word by 4-Bit LSI Static Random-Access Memory For Applications in Aerospace, Military, and Critical Industrial Equipment Features:

CDP1822

Abstract: CDP1822D CD182 CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822E CDP1822EX
Contextual Info: CDP1822, CDP1822C S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static

CD4000 series

Contextual Info: m U U CDP1822C/3 H A R R IS SEMICONDUCTOR High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • For Applications In Aerospace, Military, and Critical Industrial Equipment The CDP1822C/3 is a 256 word by 4 bit random access

CDP1822

Contextual Info: ¡HI HARRIS CDP1822 822 S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1ns.8mA The CDP1822 and CDP1822C are 256-word by 4-bit static

CDP1822CD

Abstract: CDP1822 CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX
Contextual Info: CDP1822, CDP1822C 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity

CD4000

Abstract: CDP1802 CDP1822 CDP1822CD3
Contextual Info: CDP1822C/3 S E M I C O N D U C T O R High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • For Applications in Aerospace, Military, and Critical Industrial Equipment The CDP1822C/3 is a 256 word by 4-bit random access memory designed for use in memory systems where high

Contextual Info: f u H U U S E M I C O N D U C T O R A R R CDP1822C/3 I S High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM February 1992 Features • Description For Applications In Aerospace, Military, and Critical Industrial Equipment The CDP1822C/3 is a 256 word by 4 bit random access

cdp1822

Abstract: CD4000 CDP1802 CDP1822CD3
Contextual Info: CDP1822C/3 High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • For Applications in Aerospace, Military, and Critical Industrial Equipment The CDP1822C/3 is a 256 word by 4-bit random access memory designed for use in memory systems where high

Contextual Info: 43G2271 DGBTQÜÖ 7 • H A S HbE » HARRIS SEMICOND SECTOR CDP1822 CDP1822C T "4 ìé='2.'5 ■'OT ¡T I H A R R IS S E M I C O N D U C T O R 256-Word x 4-Bit LSI Static RAM February 1992 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static

cdp1822

Contextual Info: S H A R R C I S D P 1 8 2 2 , S E M I C O N D U C T O R C D P 1 8 2 2 C 256-Word x 4-Bit LSI Static RAM August 1996 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys­

Contextual Info: CDP1822C/3 HARRIS S E M I C O N D U C T O R High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM March 1997 Description Features For Applications in Aerospace, Military, and Critical Industrial Equipment Interfaces Directly with CDP1802 Microprocessor

CDP1822

Contextual Info: CDP1822C/3 Semiconductor High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM March 1997 Description Features For Applications in Aerospace, Military, and Critical Industrial Equipment The CDP1822C/3 is a 256 word by 4-bit random access memory designed for use in memory systems where high

Contextual Info: hennis S CDP1822, CDP1822C S em icon du cto r y 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory sys­ tems where high speed, low operating current, and simplicity

cdp1822

Abstract: CDP1822CD CDP1822C CDP1822CDX CDP1822CE CDP1822CEX CDP1822D CDP1822E CDP1822EX cd18
Contextual Info: CDP1822, CDP1822C TM 256-Word x 4-Bit LSI Static RAM March 1997 Features Description • Low Operating Current - VDD = 5V, Cycle Time 1µs . . . . . . . . . . . . . . . . . . 8mA The CDP1822 and CDP1822C are 256-word by 4-bit static random-access memories designed for use in memory systems where high speed, low operating current, and simplicity

CDP18S601

Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Contextual Info: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from

triac tag 8518

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TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

LH5101-45

Abstract: PCD5101 LH5101S M5L5101LP-1 rca cdp1822 HM435101P HM435101P-1 LH5101L3 lh5101 5101L
Contextual Info: - IK St iâKIcS £ tfc ÍT CC> x TAAC max ns TCAC max (ns) TOE max (ns) 'i 7 TOH •in (ns) CMOS f y TOD max (ns) / S t a t i c If RAM ( 2 5 6 x 4 ) m 1i TWP min (ns) TDS min (ns) TDH min (ns) TWD rain (ns) TWR max (ns) V D D or V C C (V) 22PI N m I DD lax

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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Contextual Info: 33 H Æ s C D P 1822C /3 High-Reliability CMOS 256-Word x 4-Bit LSI Static RAM August 1996 Description Features For Applications in Aerospace, Military, and Critical Industrial Equipment T h e C D P 1 8 2 2 C /3 is a 2 5 6 word by 4-bit random access memory designed for use in m em ory systems where high