255FT Search Results
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TE Connectivity RLC73PD2ER255FTDRLC73PD 2E R255 1% 5K RL |
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RLC73PD2ER255FTD | Cut Tape | 5,000 | 1 |
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RLC73PD2ER255FTD | Reel | 14 Weeks, 3 Days | 5,000 |
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TE Connectivity RLC73K2AR255FTDRLC73K 2A R255 1% 5K RL |
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RLC73K2AR255FTD | Cut Tape | 4,683 | 1 |
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RLC73K2AR255FTD | Reel | 14 Weeks, 3 Days | 5,000 |
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TE Connectivity RLC73K2BR255FTDRLC73K 2B R255 1% 5K RL |
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RLC73K2BR255FTD | Digi-Reel | 4,595 | 1 |
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RLC73K2BR255FTD | Reel | 14 Weeks, 3 Days | 5,000 |
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RLC73K2BR255FTD | Cut Tape | 5,000 |
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TE Connectivity RLC73PD2HR255FTERLC73PD 2H R255 1% 4K RL |
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RLC73PD2HR255FTE | Digi-Reel | 4,000 | 1 |
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RLC73PD2HR255FTE | Reel | 14 Weeks, 3 Days | 4,000 |
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TE Connectivity RLC73PD3AR255FTDGRLC73PD 3A R255 1% 2K RL |
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RLC73PD3AR255FTDG | Digi-Reel | 3,978 | 1 |
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RLC73PD3AR255FTDG | Reel | 14 Weeks, 3 Days | 4,000 |
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255FT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: M IL -M -3 8 5 1 0 /2 8 9 4 DECEMBER 1986 M IL IT A RY S P E C IF IC A T IO N M IC RO C IR C U IT S , D I G I T A L , CMOS 4096 B I T S T A T IC RANDOM ACCESS MEMORY RAM MONOLITHIC S IL IC O N T h is s p e c if ic a t io n i s me n ts and A g e n c i e s |
OCR Scan |
MIL-M-38510/289 4096-bit MIL-M-38510 | |
Contextual Info: LOGIC DEVICES INC 8K X 8 Static RAM 2bE D Low Power FEATURES • 55L.5Ì05 aOGlG3b 7 ■ L 7 C 1 8 5 / L 7 C L 1 8 5 DESCRIPTION 'T ¥ ¿ - 2 3 -/1 li data may be retained in inactive stor The L7C185 and L7CL185 are highperformance, low-power CMOS static age with a supply voltage as low as |
OCR Scan |
L7C185 L7CL185 L7CL185 L7CL185UO L7C185KM L7CL185KM L7C185TME L7CL185TME L7C185KMB | |
7027a
Abstract: 7M206 7027-A
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IDT7M205S IDT7M206S IDT7M205S) 1DT7M206S) 205S/206Sare IDT7203 IDT7204 1DT7M205S/206S 8K/16K MIL-STD-883, 7027a 7M206 7027-A | |
7202AContextual Info: M OSEL V ITEU C MS7200U7201AL/7202AL 256x9,512x9, 1Kx9 CMOS FIFO Features Descriptions • First-In/First-Out static RAM based dual port memory ■ Three densities in a x9 configuration ■ Low power versions ■ Includes empty, full, and half full status flags |
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MS7200U7201AL/7202AL 256x9 512x9, MS7200L/7201AL/7202AL MS7200-25NC MS7200-25JC MS7200-25FC MS7200-35NQ MS7200-35JC MS7200-35FC 7202A | |
M2114A
Abstract: M2148H
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OCR Scan |
M2148H M2148H-3 18-Pin M2114A M2148H 4096-bit | |
CMOS 4000B series device
Abstract: DAC87H-CBI-V MIL-STD-863 2010 DAC85 DAC87 DAC87H DAC85H DAC85H-CBI-V DAC85H-CBI-V-BI
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OCR Scan |
DAC85H DAC87H 12-Bit DAC85 DAC87 1200ft 255ft 1455ft. CMOS 4000B series device DAC87H-CBI-V MIL-STD-863 2010 DAC87H DAC85H-CBI-V DAC85H-CBI-V-BI | |
33AOContextual Info: ss CY7C170A B>'ss c y p r e s s SEMICONDUCTOR — 4096 x 4 Static RAV RAM Features Functional Description • CMOS for optimum speed/power The CY7C170A is a high-performance CMOS static RAM organized as 4096 words by 4 bits. Easy memory expansion is provided by an active LOW chip select |
OCR Scan |
CY7C170A CY7C170A chi170A 20KMB CY7C170A-- CY7C170A-25VC 25DMB CY7C170A-25KMB 33AO | |
Contextual Info: CYM1400 ' — 32K x 8 SRAM Module PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • Very high speed 256K SRAM module T he C Y M 1400 is an extremely high performance 256-kilobit static RAM module organized as 32,768 words by 8 bits. This module is constructed using |
OCR Scan |
300-mil-wide 7C199 CYM1400 CYM1400HD-10C CYM1400HD-12C CYM1400HD-12MB CYM1400HD-15C CYM1400HD-15MB | |
Contextual Info: ju t 16 » » SM61664 1MBit 64Kx 16 CMOS SRAM Module General Description Features The SM61664 is a high performance, 1-megabit static RAM module organized as 64K words by 16 bits, in a 40-pin, dual-in-line (DIP) package. The module utilizes four 64 K x 4 static RAMs in surface mount package on |
OCR Scan |
SM61664 40-pin, 64Kxl6, 128Kx8 256Kx4 900-mil | |
Contextual Info: L7C106 256K x 4 Static RAM FEATURES 3 DESCRIPTION □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum □ Low Power Operation Active: 400 mW typical at 25 ns |
OCR Scan |
L7C106 L7C106 255ft | |
Contextual Info: HM62932 Series Preliminary 32,768-Word x 9-Bit High Speed CMOS Static Ram • FEATURES • High speed: fast access tim e 15/20 ns max • Low Power Standby: 15|iW (typ.) (L-version) Operation: 350mW (typ.) • Single 5V supply • Com pletely static memory |
OCR Scan |
HM62932 768-Word 350mW 62932JP-15 62932JP-20 62932LJP-15 62932LJP-20 | |
Contextual Info: 9 Megabit CMOS SRAM DPS256S36L M ICRO SYSTEM S PRELIMINARY DESCRIPTION: The DPS256S36L is a 256K X 36 high-density, Iow-power static RAM module comprised of eight 128K X 9 monolithic SRAM's, an advanced high-speed CMOS decoder, resistor network and decoupling capacitors |
OCR Scan |
DPS256S36L DPS256S36L 512Kx 256Kx36 | |
1720P
Abstract: 1720-20
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CYM1720 1720P 1720-20 | |
Contextual Info: September 1990 Editor 2.0 FUJITSU DATA SHEET MB82B001-25/-35 1M-BIT HIGH-SPEED BiCMOS SRAM 1M Words x 1 Bit High-Speed BiCMOS Static Random Access Memory The Fujitsu MB82B001 is a 1,048,576 words x 1 bit static random access memory fabricated with a BiCMOS process technology. For lower power dissipation and higher |
OCR Scan |
MB82B001-25/-35 MB82B001 MB82B001-25 MB82B001-35 C-28P-M C280S5S-1C | |
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ZZZ3Contextual Info: PARADIGM 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com'l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20,2 5 ,3 5 ,4 5 , and 55ns □ Low power operation - PDM41258SA Active: 400mW typ. Standby: 150 mW (typ.) |
OCR Scan |
PDM41258SA 400mW PDM41258LA 350mW MIL-STD-883, PDM41258LA PDM41258 IPDM41258SA ZZZ3 | |
Contextual Info: Features • TTL/LVTTL-compatible, three-state I/O • Organization: 1 3 1 ,0 7 2 words x 8 bits • High speed • • • • - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e - 3 /3 /4 Z 5 ns output enable access time Low pow er consum ption available - Active: |
OCR Scan |
32-pin CI024- AS7C31024-10JC -12jC 1024L S7C31024-12TC AS7C31024L-12TC | |
Contextual Info: LO GI C D E V I C E S INC 32K X 8 Static RAM FEATURES □ 32K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum Q Low Power Operation Active: 380 mW typical at 45 ns |
OCR Scan |
L7C199) L7CL199) IDT71256, CY7C198/199 28-pin 32-pin | |
Contextual Info: 512K 64K X 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • • • • • • • • • 64K x 8 fully synchronous memory High-speed-20M Hz read cycle time 16-bit synchronous address input 8-bit synchronous data input Synchronous chip select and write enable |
OCR Scan |
High-speed-20M 16-bit 43-pln 7MP6025 IDT7MP6025 be025 255ft S13-194 | |
7c1041
Abstract: CY7C1041
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OCR Scan |
CY7C1041 7c1041 CY7C1041 | |
Contextual Info: PARADIGM TECHNOLOGY PARADIGM' INC 5GE D bTmCHO DDOQOn ö ¡PAT IT ^ ÎV IO 256K Static RAM 64K x 4-Bit PDM41258SA PDM41258LA Features Description □ High speed access times Com’l: 1 0 ,1 2 ,1 5 ,2 0 and 25ns M il: 12,15, 20, 2 5 ,3 5 ,4 5 , and 55ns □ Low power operation |
OCR Scan |
PDM41258SA PDM41258LA 400mW 350mW MIL-STD883, PDM41258 53610b | |
MS62256A-25NC
Abstract: P28-1 PACKAGE DIAGRAM MS62256A-25RC
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OCR Scan |
MS62256A MS62256AL 990mW MS62256A 144-bit t-25NC P28-2 MS62256A-25RC R28-1 MS62256A-25NC P28-1 PACKAGE DIAGRAM | |
Contextual Info: Paradigm 256K Static RAM 64K x 4-Bit with Separate I/O PDM41251SA/LA PDM41252SA/LA Features Description □ High speed access times Com'l: 10,12,15,20 and 25ns M il: 12,15,20,25,35,45, and 55ns □ Separate data input and output pins □ Low power operation |
OCR Scan |
PDM41251SA/LA PDM41252SA/LA PDM41252SA, PDM41251SA 400mW PDM41252LA, 350mW PDM41251: PDM41252: | |
TAG 8510
Abstract: TAG 9148 UZ111 inspection criteria E1 3009
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OCR Scan |
MIL-M-38510/238A MIL-M-38510/238 MIL-M-38510. I-703-0 TAG 8510 TAG 9148 UZ111 inspection criteria E1 3009 | |
v 2164
Abstract: CY7C167A-35VC
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OCR Scan |
CY7C167A CY7C145DC Y7C167A-45LC CY7C167A-45VC CY7C167A-45DMB CY7C167A-45LMB CY7C167A-45KMB CY7C167A 38-00093-B v 2164 CY7C167A-35VC |