250 OHM RESISTOR Search Results

Contextual Info: MOLDED SHIELDED INDUCTORS _ fln—— .- PF SERIES n 'i RESISTORS "CAPS S COILS * DELAY U N ES Indue. MH Q (Min.) Test Freq. (MHz) SRF Min. (MHz) DCR Max. (ohm) Rated Current (mA) 0.22 49 25 250 .067 1100 0.27 47 25 250 .11 855 0.33 46 25 250 .13

Contextual Info: High Power Low Ohm ic Resistors m low ohmic foil Key features * 250 watts at 25°C with heatsinking * nickel chromium element * integral heatsinking * high energy absorption capability * internal fusing available * custom designed harness possibility * robust mechanical construction

RCZ1206

Contextual Info: M32159/07 Zero Ohm Chip Resistor Surface Mount, Jumper FEATURES PERFORMANCE Termination Material Maximum Resistance Maximum Current B/G 0.025 W 3.2A Maximum Power Rating C 0.040 W 2.5A U 0.125 W 1.4A 250 mW ENVIRONMENTAL PERFORMANCE Thermal Shock Low Temperature Operation

HVP250

Abstract: HVP25 diodes 10-25 h3 HVP10 HVP100
Contextual Info: Ultra High Voltage Resistors The content of this specification may change without notification 11/12/08 HVP Series - Up to 5 Gig ohm, 250 Watt and 300 KV DC Custom solutions are available. HOW TO ORDER HVP 100 7507 F B Buck Packing FEATURES Resistance Torrance

Contextual Info: gf/MECDN f C 1 THE ENERGY SAVER ' FOR 2 3 YEARS 100 A FLIP-TOP CURRENT TRANSFORMER, P /N 53FT02 ELECTRICAL SPECIFICATIONS 100 A NOM. 250 A MAX. PRIMARY CURRENT: 1000:1 NOMINAL TURNS RATIO: 0 .1 0 0 V /A VOLT PER AMP RATIO AT 1 0 0 A. FOR 100 OHM LOAD VOLT PER AMP RATIO AT 10A, FOR 100 OHM LOAD:

HEADER CONNECTOR

Abstract: CNX41 CNX410
Contextual Info: IL'ABBFOVAL LED - Trim leads ,250±.010 6.4mm 1 iv ( K250+.01 CMC 441/443 DATE CNX410 012 CABLE ORDERING CODE (EXAMPLE): RESISTOR Panel Hole: 5/16" (8.0mm) Panel thickness .032" to .125" (,80mm to 3.2mm) E 4 1 12 r TERMINATION WIRE SIZE CODE OHM X = Stripped End

Contextual Info: s im THE RESISTOR PEOPLE Diamond spiralled PRECISION, HIGH-VOLTAGE THICK FILM RESISTORS CGX SERIES • • • • 1/4 watt to 1 watt 500 K ohm to 15 gigohm range ±1%, ±2% or ±5% tolerance TC of 50, 100, 250 ppm/°C electroplated leads SPECIFICATIONS: p p p fl

resistor 22 ohm

Contextual Info: Module no:3116014 LabelId:3116014 Operator:Phoenix 19:06:21, Donnerstag, 28. Juni 2001 UK 5-R-C with Cermet trimming resistor 22 Ohm Terminal width 6.2 IEC rigid flexible 2 [mm ] solid Connection data stranded AWG 0.2-4 0.2-4 24-12 I U [A] [V] * 250 * 0.5 W at 70 °C

ULTRA HIGH VOLTAGE RESISTORS

Contextual Info: Ultra High Voltage Resistors HVP Series - Up to 5 Gig ohm, 250 Watt and 300 KV DC HOW TO ORDER HVP 100 7507 F B Buck Packing Resistance Torrance F = + 1% J = + 5% G = + 2% K= + 10% 0.05 5000 Resistance 1% = 4 Digits 2%, 5%, 10% = 3 Digits Rated Power W 5

FQFP-16

Abstract: AM59-0028
Contextual Info: 250 mW L-Band Power Amplifier, 1.435 - 1.525 GHz Preliminary AM59-0028 V 1P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 34% typ. 50 Ohm Input/Output Matched

IRF 543 MOSFET

Abstract: Diode c514 irf 9540A irf 2030 IRF 511 MOSfet 9540A irfp254 IRFP255 C514 fiat irf 2030 n
Contextual Info: HE D § 4055452 INTERNATIONAL r - J r - fiT □□□Ö75Ö 7 | Data Sheet No. PD-9.540A RECTIFIER TOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS • o IRFPS54 IRFP255 N-CHANIMEL Product Summary 250 Volt, 0.14 Ohm HEXFET

L3220

Contextual Info: 250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz Preliminary MA05515-DIE V 1P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 41% typ. 50 Ohm Input/Output Matched

Contextual Info: 250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz Preliminary MA05515D V 2P.00 Features • • • • • OUTLINE DRAWING High Linear Gain: 32 dB typ. High Saturated Output Power: +24 dBm typ. High Power Added Efficiency: 41% typ. 50 Ohm Input/Output Matched

Contextual Info: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP244 IRFP245 N-CHANNEL Product Summary 250 Volt, 0.28 Ohm HEXFET TO-247AC TO-3P Plastic Package

ec a063

Abstract: IRF254 6710 mosfet
Contextual Info: HE D I 4flSS4S2 OCICHIEO 7 | Data Sheet No. PD-9.589A INTERNATIONAL R E C T IF IE R T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRF254 IRF25S HEXFET TRANSISTORS iJ IM-CHAIMIMEL 250 Volt, 0.14 Ohm, HEXFET TO-204AE TO-3 Hermetic Package

irf614

Abstract: irf615 diode c226 diode c225
Contextual Info: H E D I 4 A S 5 4 55 QQ0Ö474 4 | INTERNATIONAL Data Sheet No. PD-9.475A T~ S R ECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IO R IRF614 IRFG15 N-CHANNEL 250 Volt, 2.0 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec­

MMIC POWER AMPLIFIER S-BAND

Contextual Info: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary MA05535D V 2P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s MA05535D is a two-stage MMIC power

pj 67 diode

Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A
Contextual Info: HE 0 | MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package

Contextual Info: TYPE SM AXIAL LEAD Type SM156 250 £2 ± 0.1% 1.5 W in-stock! Custom power 2-terminal styles available from: • 0.02 ohm to 4 Megs with tolerances to ±0.05% . • TCR char: 0±10ppm /°C. 100 ohms and above • Stability: To ±0.005%/yr. (Shelf Life) • Low EMF vs. copper lead construction.

MA05535-DIE

Abstract: MMIC s-band
Contextual Info: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary MA05535-DIE V 1P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s MA05535-DIE is a two-stage MMIC

IRF624

Contextual Info: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec­

FQFP-16

Abstract: AM59-0029 AM59002
Contextual Info: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary AM59-0029 V 1P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s AM59-0029 is a two-stage MMIC power

Contextual Info: £f?MECDN 'Zynfi' 1OOA CURRENT TRANSFORMER, P /N 5311 THE ENERGY SAVER FOR 23 YEARS ELECTRICAL SPECIFICATIONS 100 A NOM. 250 A MAX. 1000:1 NOMINAL 0 .1 0 0 V /A 0 .0 9 8 6 V /A 20 OHMS 4kV RMS PRIMARY CURRENT: TURNS RATIO: VOLT PER AMP RATIO AT 100 A, FOR 100 OHM LOAD:

Contextual Info: 250 mW S-Band Power Amplifier, 2.2 - 2.4 GHz Preliminary AM59-0029 V 1P.00 Features • • • • OUTLINE DRAWING High Linear Gain: 29 dB typ. High Saturated Output Power: +24 dBm typ. 50 Ohm Input/Output Matched InGaP HBT Process Description M/A-COM’s AM59-0029 is a two-stage MMIC power