25/AT&T POWER MODULE Search Results

BSM15GD100D

Abstract: C160 004S7 VM305171
Contextual Info: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes

3Tg 21 10 siemens

Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Contextual Info: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper

nf 0036 diode

Abstract: Diode 15630 CM1000HA-28H cm50dy-28 CM1200HA-34H
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 1400 VOLT HIGH PERFORMANCE H-SERIES IGBTMOD TRANSISTOR POWER MODULES Major Ratings and Characteristics at T c = 25 C (T j Maximum = 1 5 0 C ) MAXIMUM RATINGS ELECTRICAL CHARACTERISICS

BSM15GD120D

Abstract: 14V-12 vm305171 C160 QD45
Contextual Info: bOE D • ä23SbOS 0Q45Û00 'ibT « S I E G SIEMENS SIEMENS AKTIEN6ESELLSCHAF ~ r ^ ¿ 2 3 ' ~ 0 ’7 IGBT Module Preliminary Data BSM15GD120D VCE = 1200 V / c = 6 x 25 A at T c = 25 C / c = 6 x 15 A at r c = 80"C • Power module • 3-phase full bridge • Including fast free-wheel diodes

Contextual Info: int ! P » D U © T IP K IIW O E W Intel386 EX EMBEDDED MICROPROCESSOR Static lntel386TM CPU Core — Low Power Consumption — Operating Power Supply 2.7V to 5.5V — Operating Frequency 16 MHz at 2.7V to 3.3V; 20 MHz at 3.0V to 3.6V; 25 MHz at 4.5V to 5.5V

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

Transformer 500 volt to 24 a c 24 dc 240 ac volt

Abstract: P575
Contextual Info: C OMPUT ER PRDTS/ POWER T=IC D • 2313103 OOQD3bP T17 ■ CPR T ' 57' ° 5 SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS MED 300/500 SERIES Single, Dual and Triple Outputs ■

PM554

Abstract: PM555 PM542 PM576 PM500 PM534 PM563 PM562 pm574
Contextual Info: COMPUTER PRDTS/ POWER “H C D • 5313103 □QQQ3St i L13 ■ CPR T ~S7'D5 SPECIFICATIONS All Specifications Typical at Nominal Line, Full Load 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage Accuracy. ±1.0%, max. Temperature Coefficient.

HM303

Abstract: HE581 power supply Socket ms013-0 HM Series HE581 hm330 HM303 circuit HE500 HE300 HM53
Contextual Info: COMPUTER PR DTSi POWER Ï eJ 3313103 0GQG3b4 1 1 ~ T -J 7 -0 5 SPEC IFICATIO NS All Specifications Typical at Nominal Line, Full Load and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage Accuracy . ± 2.0%, max. Temperature Coefficient

Contextual Info: AT&T Data Sheet August 1994 Microelectronics CC025 Dual Output-Series Power Modules: 18 Vdc to 36 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range

Contextual Info: AT&T Data Sheet October 1994 Microelectronics CC025 Triple Output-Series Power Modules: 18 Vdc to 36 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range

IGBT Module BSM150GB120D

Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Contextual Info: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule

Contextual Info: Data Sheet May 1995 S t AT&T r Microelectronics DSP1610 Signal Coding Digital Signal Processor 1 Features 2 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip ■ Low-power (15 mW/MIPS typical)

Contextual Info: Data Sheet September 1994 m AT&T ^ ¡ 3 ^ Microelectronics DC025 Triple Output-Series Power Modules: 18 Vdc to 36 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case with separate case ground pin

bsm 256

Abstract: siemens igbt BSM 150 gb 100 d C67076-A2102-A2 BSM 15 GB bsm siemens VM105270
Contextual Info: L.GE D • Ö235b05 DDMSÖÖfl 413 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF IGBT Module Preliminary Data BSM 150 GB 100 D BSM 150 GAL 100 D VCE - 1000 V I c = 2 x 2 0 0 A at T c = 25 C / c = 2 X 150 A at Tc = 8 0 C • • • • • Power m odule H alf-bridge/Chopper

PM513

Abstract: PM505 PM565 Socket ms013-0 PM500 PM531 PM501 PM514 PM511 pm592
Contextual Info: COMPUTER PRDTS-, POWER "H D E | S31B1Q 3 000Q 3Sfi b ¡ ' r ~ S ' 7 - O S S P E C IFIC A T IO N S All Specifications Typical at Nominal Line, Full Load, and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage Accuracy . ±1.0%, max.

Contextual Info: .460 ± .005 . 100 ± .005 .135 -o o 'O O * .005 .460 t .005 1 NEON LAMP CHARACTERISTICS TEST CONDITIONS MIN. Rat 1no VI It Vm PHOTOCELL Vmax P PHOTOMOO R o n 3)141 RofT 100 100 25* C Notes: Absolute Maximum Ratings; Temperature storage! -40*C to 75*C OperatIngiOerote power to 0 at 75*C

Contextual Info: Data Sheet Microelectronics FE020-Series Power Modules: dc-dc Converters; 48 Vdc Input, 20 W Features • Low profile: 0.5 in. ■ High power-density: 6 W/in.3 ■ Output overvoltage clamp ■ No minimum load ■ Short-circuit protection ■ Parallel operation with load sharing

Contextual Info: May 1992 • ^ = - Microelectronics MW005-Series Power Modules; 36 Vdc to 72 Vdc Inputs, 5 W Features ■ Small size: 2.00 in. x 1.10 in. x 0.46 in. ■ Wide input-voltage range: 36 Vdc to 72 Vdc ■ Output current limiting, unlimited duration ■ Output overvoltage clamp

950B

Contextual Info: A T & T MELEC CMPNT/ PWR 25E D AT&T Preliminary Data Sheet T -5 7 -1 1 950-Series Power Modules; 48 Vdc Input Features • High efficiency: r) = 85%, typ. (950A) Ti = 88%, typ. (950B) ■ Parallel operation with load sharing ■ Low profile: 0.6 in. ■ Complete input and output filtering

Contextual Info: Data Sheet October 1991 AT — — A l« ! Microelectronics ME005-Series Power Modules; 39.5 Vdc to 60 Vdc Inputs, 5 W Features • Small size: 2.00 in. x 1.10 in. x 0.46 in. ■ Output current limiting, unlimited duration ■ Output overvoltage clamp ■ Load regulation: 0.15% max. ME005A, B, C, N

Contextual Info: Data Sheet September 1994 sA TsT Microelectronics DW025 Triple Output-Series Power Modules: 36 Vdc to 72 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case with separate case ground pin

VA36

Contextual Info: a AT&T Data Sheet November 1993 : ' = = F Microelectronics MC005-Series Power Modules: 18 Vdc to 36 Vdc Inputs; 5 W Features • Small size: 2.00 in. x 1.10 in. x 0.46 in. ■ Wide input voltage range ■ Output current limiting; unlimited duration ■ Output overvoltage clamp

Contextual Info: Data Sheet October 1994 ; m A T eT ^ = 5 ^ Microelectronics CW025 Triple Output-Series Power Modules: 36 Vdc to 72 Vdc Input; 25 W Features • Small size: 2.80 in. x 2.40 in. x 0.50 in. ■ Low output noise ■ Industry-standard pinout ■ Metal case ■ 2:1 input voltage range