A23SBOS Search Results

IC 4556

Abstract: 4556D transistor Siemens 14 S S 92 GPB16 4556 d transistor BF 939
Contextual Info: 2SC D • a23SbOS OQOMSSb 4 WÊSIZ6 . PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 939 4556 D - BF 93 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VH F input stages in TV tuners.

2f5 transistor

Abstract: Transistor BFT 99 TIC 122 Transistor 2SC 2090 Transistor BFT 44 U/25/20/TN26/15/850/BFT75
Contextual Info: a s c ì> • a23SbOS 0004?13 S » S I E G T - ti- n BFT 75 NPN Silicon RF Broadband Transistor - SIEMENS AKTIEN6ESELLSCHAF - BFT 75 is an epitaxial NPN silicon planar transistor in TO 23 6 plastic package 23 A 3 DIN 41869 , intended fo r use in low-noise input and intermediate stages in RF

Contextual Info: • A23SbOS 0035334 2 ■ SIEG Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E » ■ A23SbDS Q03flM33 M « S I E 6 B82412 EMI Suppression Chokes SIEMENS AKTIENGESELLSCHAF

Contextual Info: • A23SbOS 0035334 2 ■ SIE G Selection Guide SIEMENS AKTIEN6ESELLSCHAF M7E D EMI suppression chokes HF chokes, SMD chip inductors HF chokes, axial and unidirectional 0752 E—05 A19 M7E D ■ ô235bD5 QG3Ô437 1 « S I E G B82422 EMI Suppression Chokes

SAE0700

Abstract: SAE 0700 ic sae 0700
Contextual Info: 47E J> SIEMENS A23SbOS 003S1Q7 H « S I E 6 SIEMENS AKTIENGESELLSCHAF Audible Signal Device SAE 0700 Bipolar 1C Features • • • • Direct AC-voltage feeding possible through integrated bridge rectifier Integrated overvoltage protection through Z-diode, approx. 28 V

diode 3a05

Contextual Info: büE J> -O £ a23SbOS DG4fc.Sfll SÜ3 » S I E G SFH 484501 SIEMENS 5 X 40 STRIPE ARRAY SIEMENS AKTIENGESELLSCHAf FEATURES P a cka g e D im e n sio n s in m m • GRINSCH-Quantum-Well Structure with Dielectric Coating (Asymmetrical l= V □L • Monochromatic Radiation Source

Contextual Info: faOE D • a23SbOS D0Mb353 Sé? B S I E G SIEMENS -T'*t- S 3 PHOTOTRANSISTOR OPTOCOUPLER SIEMENS AKTIENGESELLSCHAF FEATURES • IL2B P a c k a g e D im e n s io n s in In c h e s m m F iv e C T R S e le c t io n s • H ig h C o lle c t o r - E m it t e r V o lt a g e , B V CEO= 5 0 V

SIEMENS thyristor

Abstract: VDR Siemens US-802 BR103 BR 103 thyristor 1
Contextual Info: 2SC D • a23SbOS 0004755 T BISIEfi \ Silicon M iniature Thyristor 25C C K 7 5 5 BR103 - S I E M E N S AKTIEN6ESELLSCHAF - BR 103 is a silicon planar thyristor in a TO-92 plastic package 10 A 3 DIN 41868 . This thyristor is suitable for various applications within iow power ranges, e.g. controls

TRANSISTOR G13

Abstract: c 939 transistor bf 4556 d BF939
Contextual Info: 2SC D • a23SbOS OQOMSSb 4 W Ê S I Z 6 . PNP Silicon Planar Transistor SIEMENS AK TI EN GES EL LSC HAF BF 939 45 56 D - BF 9 3 9 is a PNP silicon RF pianar transistor in TO 92 plastic package DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.

SIEMENS THYRISTOR

Abstract: BR103 us-802 gk 803
Contextual Info: 2SC D • a23SbOS 0004755 T «¡SIEfi \ Silicon Miniature Thyristor 25C 04 755 BR103 D - S I E M E N S AKTIEN6ESELLSCHAF - BR 1 03 is a silicon planar thyristor in a T O -9 2 plastic package 10 A 3 DIN 41868 . This thyristor is suitable for various applications within low power ranges, e.g. controls

3Tg 21 10 siemens

Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Contextual Info: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper

BF245

Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
Contextual Info: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar

S150

Abstract: UX-1111-084-GH-Y-33 011X1
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E i> • a23SbOS 0027450 4 « S I E G S IE M E N S KOM 0622059 64-ELEMENT SILICON CIRCULAR ARRAY VERY LOW DARK CURRENT Outline Drawing Dimensions mm Chip 4 ,03 Seal I 1 O o PC boa rd 1 0 .4 27,4 ¿54 spacing t tl % ft 25 %i 30 24

Contextual Info: • a23SbOS 00^03*1 737 SIEMENS 2 Kbit 256 x 8 bit Serial CMOS EEPROMs, Serial Peripheral Interface SLx 25C02 Preliminary Features • Data EEPROM internally organized as 256 bytes and 32 pages x 8 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation

Contextual Info: SIEMENS 2 M X 8-Bit Dynamic RAM 2 k-refresh HYB 5117800AJ-50/-60/-70/-80 Prelim inary Inform ation • • • • • • • • • • • • 2097152 words by 8-bit organization 0 to 70 'C operating temperature Fast access and cycle time RAS access time:

siemens ts 4140

Abstract: a0d0h
Contextual Info: SIEMENS SAB-C503 8-Bit CMOS Microcontroller • Compatible to standard 8051 microcontroller • Versions for 12 and 20 MHz operating frequency • 8 K x 8 ROM SAB-C503-1R only • 256 x 8 RAM • Four 8-bit ports, (including one input port for digital or analog input)

Contextual Info: 47E D • SIEM EN S A235bGS 0034130 SIEMENS AKTIENGESELLSCHAF Infrared Signal Receiver 4 ■ SIE6 TDA 4065 Preliminary Data Bipolar 1C Features • • • • • • High input sensitivity Improved com pensation for extraneous light in range of normal indoor illuminance

Contextual Info: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

Contextual Info: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2

BTS409L1

Abstract: E3062 siemens profet description E3043 E3062A smd diode EG - 413 Q67060S6107A2 v2l smd zener
Contextual Info: Û235bd5 00fim04 =115 S IE M E N S PROFET BTS409L1 Smart Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 M-Oad dump • Clamp of negative voltage at output Wbb-VbuT Avalanche • Short-circuit protection Vbb operation)

c535

Abstract: 80C535 80c515 poe cci 1033 siemens 80C535 microcontroller 80c535-n sab-80535 80C51 sab80c51 B158-H6579-X-X-7600
Contextual Info: SIEM EN S High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80C535/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only

siemens scr

Abstract: scr 6A scr siemens 235L BTS620L1 BTS621L1 GPT05167
Contextual Info: m ¿castas ooôil^i iôt m SIEMENS PROFET BTS620L1 Smart Two Channel Highside Power Switch Features Product Summary • Load dump and reverse battery protection1 • Short-circuit protection VLoad dump • Current limitation Vbb operation) • Thermal shutdown

N1475

Contextual Info: f l 235 bOS G G 37 b 47 7 • MKT Capacitors SI EMENS A KT I EN 6 E S E L L S C H A F M7E D - - SIEG E3 B 3 2 5 2 0 .B 3 2 52 9 / f 'C f S l 7 ' O S. M e t a liz a d p o ly e s t e r film c a p a c it o r s in a c c o r d a n c e w it h D IN 4 4 1 1 2