PM501 Search Results

Hitachi DSA001652

Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

4600 fet

Abstract: PM50150K Hitachi DSA00311
Contextual Info: PM50150K Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

v726

Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Sw itching Features • • • • • • • • Equipped with Power M OS FET Low on-resistance High speed switching Low drive current W ide area o f safe operation Inherent parallel diode between source and drain

Contextual Info: PM50150K Silicon N-Channel Power MOS FET Module HITACHI Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM45100K

Abstract: PM50100K
Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Contextual Info: PM50150K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

PM50150K

Contextual Info: PM50150K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Hitachi DSA001652

Contextual Info: PM50150K Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

PM50100K

Abstract: Hitachi DSA00311
Contextual Info: PM50100K Silicon N-Channel Power MOS FET Module Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PM513

Abstract: PM505 PM565 Socket ms013-0 PM500 PM531 PM501 PM514 PM511 pm592
Contextual Info: COMPUTER PRDTS-, POWER "H D E | S31B1Q 3 000Q 3Sfi b ¡ ' r ~ S ' 7 - O S S P E C IFIC A T IO N S All Specifications Typical at Nominal Line, Full Load, and 25°C Unless Otherwise Noted. OUTPUT SPECIFICATIONS Voltage Accuracy . ±1.0%, max.

PM45100K

Abstract: Hitachi DSA001652
Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module November 1996 Application High Speed Power Switching Features • • • • • • • • Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

PF0020

Abstract: PM4550C PU7456 TPM relay
Contextual Info: - 162 - f Ü € tt m € & m SS * * H 1 K I* YGS* V * ft M A (V) & * (X P d /P c h (A) * PF0015 H Ä 824— 849MHz PA MOS 12 DD 2 D PF0016 B aL 8 9 0 - 9 1 5 M H z PA MOS 12 DD 2 D PF0017 B aL 872— 905MHz PA MOS 12 DD 2 D PF0020 B aL 820— 850MHz PA

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

5V12

Abstract: PM501 computer prdts PM591 PM510 H313 PM505 tl 464 PM500 PM536
Contextual Info: COMPUTER P R D T S / POWER S2E D • 2313103 000056=] 121 * C P R PM 500 SERIES 1 to 10 W att Dual and Triple Output Encapsulated Power Modules * Split-Bobbin Wound * 2500 VAC Isolation * UL Recognized * CSA Certified •1 1 5 , 220, or 240 VAC Input * Short Circuit Protection

PM500

Abstract: PM597 PM500CE PM529 PM563
Contextual Info: PM500 SERIES Single, dual and triple output • • • • • • The PM500 series is an encapsulated, board mountable linear AC/DC power module. The series has single, dual and triple output models with industry standard output configurations operating from an input voltage of 115VAC,

PM536

Abstract: PM500
Contextual Info: PM500 SERIES Single, dual and triple output • • • • • • The PM500 series is an encapsulated, board mountable linear AC/DC power module. The series has single, dual and triple output models with industry standard output configurations operating from an input voltage of 115VAC,

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

PM45100K

Abstract: PM50100K 0312C
Contextual Info: PM45100K Silicon N-Channel Power MOS FET Module for High-Speed Power Switching Features • • • • • • • • Pin Arrangement Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain

2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

PM-591

Abstract: PM553 PM595 PM505 PM591 PM593 pm536 pm592 PM570
Contextual Info: PM500 SERIES 1 to 10 Watt Dual and Triple Output Encapsulated Power Module!*s • • • • • • • Split-Bobbin Wound 2500 VAC Isolation UL Recognized CSA Certified 115,220, or 240 VAC Input Short Circuit Protection 2 Year Warranty These popular PC-mountable linear power modules feature dual