24B40 Search Results
24B40 Price and Stock
Littelfuse Inc SL1024B400CGDT 400V 20KA 3 POLE |
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SL1024B400C | Tray | 1,000 |
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Littelfuse Inc SL1024B400RGDT 400V 20KA 3 POLE TH |
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SL1024B400R | Tray | 1,000 |
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Sanyo-Denki Co Ltd 9WP0924B401FAN AXIAL 92X25MM 24VDC WIRE |
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9WP0924B401 | Box |
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Littelfuse Inc SL1024B400RFGDT 400V 20KA 3 POLE TH |
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SL1024B400RF | Tray | 1,000 |
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Littelfuse Inc SL1024B400RGGDT 400V 20KA 3 POLE TH |
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SL1024B400RG | Tray | 1,000 |
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24B40 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IMSM514400
Abstract: GG13 MSM temperature spec MSM514400 MSM514400-10 MSM514400-70 MSM514400-80 D013007
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24b40 MSM514400_ 576-Word MSM514400 26-pin 20-pin IMSM514400 GG13 MSM temperature spec MSM514400-10 MSM514400-70 MSM514400-80 D013007 | |
MSM511000
Abstract: ZIP20-P-400 msm511000h
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MSM511000H_ 576-Word MSM511000H 18-pin 26/20-pin 20-pin MSM511000 ZIP20-P-400 | |
Contextual Info: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05° |
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OPA623 350MHz, 100V/ns, OPA623 AMPLIFIERS23 10ns/div 17313b5 0024bb3 | |
Contextual Info: O K I electronic components QL360N-5_ 1.3 urn High-Power Laser-Diode DIP Module G E N E R A L D ESC R IP TIO N The OL360N-5 is a 1.3 im, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance Oki laser diode achieved a single-mode fiber output of over 5 mW. |
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QL360N-5_ OL360N-5 b724240 QD224b2 h5200 | |
1X3 diode
Abstract: 04ti
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10-mA b72424D 24E4G L7E4240 1X3 diode 04ti | |
Contextual Info: O K I Semiconductor MSM7503 Multi-Function PCM C O D E C GENERAL DESCRIPTION The MSM7503 is a high performance, low power CODEC LSI device integrating a 2-wire time division transmission ping-pong transmission interface function and has a basic function of |
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MSM7503 MSM7503 MSM7502. | |
Contextual Info: OKI electronic components O C360 PHOTO COUPLER GEN ERA L DESCRIPTION The OC360 is a photocoupler formed by combining a GaAs infrared light emitting diode and a phototransistor into a two-channel configuration. Encased in an 8-pin plastic package, the CXZ360 is |
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OC360 CXZ360 E86831 OC360 24B40 L724240 | |
S4-6V
Abstract: 26-PIN
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MSM51V4100/SL 304-Word MSM51V4100/SL 1024cycles/16ms, 128ms b724240 S4-6V 26-PIN | |
Contextual Info: O K I electronic components T36_ Silicon Planar Phototransistor GEN ERAL DESCRIPTION The planar structure of the OKI T36 silicon phototransistor provides a high degree of sensitivity. The T36 has wide application for a compact and light-weighted package. |
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Q01flc 24B40 | |
RC5 IR-E
Abstract: MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM
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242i4Q -zs-ts-MSM514100 304-Word MSM514100 MSIVT514100 26-pin 20-pin 18-pin RC5 IR-E MSM514100-10 MSM514100-70 MSM514100-80 Fast Cycle RAM | |
301767Contextual Info: O K I Semiconductor MSM5 1 1664 A/AL 65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE BYTE WRITE DESCRIPTION The MSM511664A/AL is a new generation dynamic RAM organized as 65,536-word x 16-bit. The technology used to fabricate the MSM511664A/AL is OKI's CMOS silicon gate process technology. |
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536-Word 16-Bit MSM511664A/AL 16-bit. cycles/32ms b724240 301767 | |
TG714
Abstract: msm7 MSM7508B MSM7509B MSM7541 MSM7542 MSM7566 MSM7567
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MSM7566 MSM7567 MSM7567 MSM7508B MSM7509B. 00214S1 TG714 msm7 MSM7509B MSM7541 MSM7542 | |
MSM6815
Abstract: j 6815 MSM6814 E137A
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MSM6814 MSM6815 b724S40 MSM6815 j 6815 E137A | |
Contextual Info: O K I S e m iœ n d u c to r M S M 64 1 6 2 /M S M 6 4 1 6 2 D 4 -B it Single-Chip M icrocontroller DESCRIPTION The M SM 64162/M SM 64162D are high-perform ance CMOS 4-bit, single-chip m icrocontrollers which h av e b u ilt-in 128-n ib b le RA M , 16 I / O 's , b u z z e r o u tp u t, an d 2 4 LC D s e g m e n t d riv e rs . The |
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64162/M 64162D 128-n MSM64162 MSM64162D 22for 72424D | |
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HA 16630
Abstract: 910nm Infrared Emitting Diode OLD224 INFRARED EMITTING DIODE TO18 1000 nm light emitting diode
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OLD224 OLD224 b754240 001603b L72H240 HA 16630 910nm Infrared Emitting Diode INFRARED EMITTING DIODE TO18 1000 nm light emitting diode | |
4BM0
Abstract: 009 1155 s1z mixer KGF1155 KGF1155B
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KGF1155B/1155 F1155B F1155 F1155B, KGF1155B 4BM0 009 1155 s1z mixer KGF1155 KGF1155B | |
msc23136c
Abstract: DS1060 MSC23136
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MSC23136C/CL-XXBS10/DS10 576-Word 36-Bit MSC23136C/CL-xxBS10/DS10 72-pin MSC23136C/CL-xxBS10: msc23136c DS1060 MSC23136 | |
upc 1185 h
Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
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AS3B119GM10M AS5B125EM50M AS6B118GM50M 1310nm) 1550nm) upc 1185 h mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E | |
Contextual Info: O K I Semiconductor MSC23S132B/BL-XXBS8/DS8 1,048,576-Word by 32-Bit DRAM Module: Fast Page Mode D E S C R IP TIO N The OKI M SC 23S132B/BL -xxBS8/D S8 is a fully decoded 1,048,576-word x 32-bit CM OS Dynamic Ran dom Access M em ory M odule com posed of eight 4-M b D RAM s in SO J M SM 514400B /B L packages |
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MSC23S132B/BL-xxBS8/DS8 576-Word 32-Bit MSC23S132B MSM514400B/BL) 72-pin | |
Contextual Info: O K I Semiconductor MSM51V16800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI’s CMOS silicon gate technology. The MSM51V16800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16800A is |
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MSM51V16800A 152-Word MSM51V16800A 28-pin cycles/64 | |
20-PIN
Abstract: 26-PIN ZIP20-P-400
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MSM514400B/BL 576-Word MSM514400B/BL 1024cycles/16ms, 1024cycles/128ms b7E4E40 20-PIN 26-PIN ZIP20-P-400 | |
L70bContextual Info: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology. |
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MSM514410B/BL_ 576-Word MSM514410B/BL 1024cycles/16ms, 1024cycles/128ms MSM51441OB/BL 7242M0 L70b | |
Contextual Info: O K I Semiconductor MSM27C231ZB_ 262,144-Word x 8-Bit Low-Voltage One Time PROM DESCRIPTION The MSM27C231ZB is a 2 Mb electrically Programmable Read-Only Memory organized as 262,144 words x 8 bits. The MSM27C231ZB operates on a single 3.3 V power supply and is TTL compatible. Since the |
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MSM27C231ZB_ 144-Word MSM27C231ZB MSM27C231ZB 32-pin | |
Contextual Info: O K I Semiconductor MSM531031B_ 131,072-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM531031B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531031B operates on a single 3.0 V or 3.3 V power supply but offers the same fast access times |
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MSM531031B_ 072-Word MSM531031B MSM531021B 32-pin) B4240 MSM531031B |