STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,
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12TQ
Abstract: 12TQ035 12TQ040 12TQ045 40HFL40S02 IRFP460
Text: 2002-02-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-222-47 12TQ035 sch diodTO-220AC 70-222-62 12TQ040 sch diodTO-220AC 70-222-88 12TQ045 sch diodTO-220AC PD-2.239 rev. A 12/97
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12TQ035
diodTO-220AC
12TQ040
12TQ045
IRFP460
40HFL40S02
12TQ
40HFL40S02
IRFP460
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Untitled
Abstract: No abstract text available
Text: RPI-222 External dimensions Unit : mm RPI-222 Photointerrupter, Small type Through hole Absolute maximum ratings (Ta=25°C) PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation
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RPI-222
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TMPZ84C015
Abstract: 8 pin mini-din diagram 9 pin female d-sub MSH 14 Connectors 6103AC01 MSH Connectors PC ladder diagram pc worx
Text: CP 222 IB INTERBUS Control Panel With Programming Capabilities According to IEC 61131-3 Data Sheet 6103AC01 07/2001 This data sheet is intended to be used in association with the user manual "Description and Installation of the CP 222 IB Control Panel". Product Description
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6103AC01
TMPZ84C015
8 pin mini-din diagram 9 pin female d-sub
MSH 14 Connectors
6103AC01
MSH Connectors
PC ladder diagram pc worx
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Diode press-fit
Abstract: No abstract text available
Text: BYZ 50A22 . BYZ50K39 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module Absolute Maximum Ratings Symbol Conditions 222 270 Silicon Press-fit diodes Silicon Protectifiers with
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50A22
BYZ50K39
071855F
BYZ50K39
07185J
Diode press-fit
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11p06
Abstract: DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 6k201 84c122a philips RC5 protocol
Text: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors
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PCA84C122;
11p06
DIP20
PCA84C122
PCA84C222
SDIP24
SO20
SO24
6k201
84c122a
philips RC5 protocol
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49 mhz remote control transmitter circuit
Abstract: Data Handbook IC14 PCA84C122 822 ic MAKING IR REMOTE CONTROL IC RC-5 ic remote control REMOTE CONTROL IC TI 783 DIP20 PCA84C222
Text: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors
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PCA84C122;
SCD39
453041/1500/03/pp24
49 mhz remote control transmitter circuit
Data Handbook IC14
PCA84C122
822 ic MAKING
IR REMOTE CONTROL IC
RC-5 ic remote control
REMOTE CONTROL IC
TI 783
DIP20
PCA84C222
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Data Handbook IC14
Abstract: 822 ic MAKING RC-5 ir remote control DIP20 PCA84C122 PCA84C222 SDIP24 SO20 SO24 MCD251
Text: INTEGRATED CIRCUITS DATA SHEET PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductors 1995 May 01 Philips Semiconductors
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PCA84C122;
SCD39
453041/1500/03/pp24
Data Handbook IC14
822 ic MAKING
RC-5 ir remote control
DIP20
PCA84C122
PCA84C222
SDIP24
SO20
SO24
MCD251
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3 phase inverter simulation diagram
Abstract: difference between IGBT and MOSFET IN inverter Measurement of stray inductance for IGBT schematic diagram PWM inverter voltage source Three phase inverter mosfet Diagram 3 phase inverter schematic diagram Power MosFet inverter schematic diagram Simulation of three-phase inverter IRFP2907 Application Notes mosfet INVERTER applications
Text: Combined Device and System Simulation for Automotive Application Using SABER Jingdong Chen, Scott Downer, Anthony Murray, Alberto Guerra and Tim McDonald International Rectifier Co. 222 Kansas Street, El Segundo, CA 90245 As presented at WPET 2002 Abstract:
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IRFP2907
3 phase inverter simulation diagram
difference between IGBT and MOSFET IN inverter
Measurement of stray inductance for IGBT
schematic diagram PWM inverter voltage source
Three phase inverter mosfet Diagram
3 phase inverter schematic diagram
Power MosFet inverter schematic diagram
Simulation of three-phase inverter
IRFP2907 Application Notes
mosfet INVERTER applications
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BAV70A
Abstract: RT2B1 su13 SIEMENS RT1A1 10w r33 diode zener c72 R47 DALE DIP8 socket Philips zener diode ct2 pal22v10h
Text: Router/ISDN Development Module - Miscellaneous Revised: Thursday, February 11, 1999 Revision: 2.1 C Advanced Micro Devices, Inc. (800) 222-9323 5204 E. Ben White Blvd. Austin, TX 78741 AMD Proprietary/All Rights Reserved Bill Of Materials February 11,1999
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C40ptek
EC-20
000M-ITR
EC-12
228M-ITR
SRX5144
579545M-ITR
068uF
1/10W
SPARE14
BAV70A
RT2B1
su13 SIEMENS
RT1A1
10w r33
diode zener c72
R47 DALE
DIP8 socket
Philips zener diode ct2
pal22v10h
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Untitled
Abstract: No abstract text available
Text: External dimensions Unit : mm RPI-222 Photointerrupter, Small type Through hole Absolute maximum ratings (Ta=25°C) PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation PC
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RPI-222
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Untitled
Abstract: No abstract text available
Text: External dimensions Unit : mm RPI-222 Photointerrupter, Small type Through hole Absolute maximum ratings (Ta=25°C) PD 80 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 4.5 V Collector current IC 30 mA Collector power dissipation PC
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RPI-222
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FR 220
Abstract: fr220
Text: IRFR220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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IRFR220/222
IRFU220/222
IRFR220/222
FR 220
fr220
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resistor
Abstract: 1n5819 smd 1mh inductor tl431 smd ln4001 .1k 400V capacitor 4.7uF 400V capacitor 1N5819 smd diode smd 472 resistor smd 102
Text: D esignator P art Type F oot P rint D e scrip tio n A ccu ra te L1 1mH Inductor C1 4.7UF/400V Electric Capacitor 85eC C2 4.7UF/400V Electric Capacitor 85eC C3 222/1KV Ceramic Capacitor C4 100U/16V Electric Capacitor C5 682/60V 0805A SMD Capacitor C6 222/60V
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7uF/400V
222/1KV
100U/16V
682/60V
222/60V
472/60V
330U/16V
105BC
47U/16V
resistor
1n5819 smd
1mh inductor
tl431 smd
ln4001
.1k 400V capacitor
4.7uF 400V capacitor
1N5819 smd diode
smd 472
resistor smd 102
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IRFU220
Abstract: IRFR220 U222 irfu220 samsung J50V IRFR222 G31* Diode B51A 222 diode
Text: SAMSUNG ELECTRONICS INC bME D • 7 *lh4m S IKFH220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 0 Q 1 2 3 MG ITS « S H G K D-PACK Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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0Q1E34D
IKI-K220/222
IRFU220/222
IRFR220/U220
IRFR222/U222
IRFR220/222
ib4142
IRFU220
IRFR220
U222
irfu220 samsung
J50V
IRFR222
G31* Diode
B51A
222 diode
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FR220
Abstract: IFU220 IRFU N-Channel Power MOSFETs FR 220 IRFU ir 222 IRF N-Channel Power MOSFETs RC 4565 IFU221
Text: m Ha r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Pa cka ges Features T O -2 5 1 A A T O P VIEW • 3.8A and 4.6A, 150V and 200V • rDS on = 0.80fi and 1.2fl >S O U R C E • Single Pulse Avalanche Energy Rated
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IRFR220/221/222
IRFU220/221/222
IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221
FR220
IFU220
IRFU N-Channel Power MOSFETs
FR 220
IRFU
ir 222
IRF N-Channel Power MOSFETs
RC 4565
IFU221
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SR 6863
Abstract: sr 6863 D logic pulser intel 8085 instruction set FOR PRACTICAL of 7490 Interfacing and Matrix Keyboard 8085 86c7
Text: Application Note 222 A DESIGNER'S G UID E TO SIGNATURE ANALYSIS TABLE OF CONTENTS Introduction to Signature Analysis . Scope . The Need for SA .
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Untitled
Abstract: No abstract text available
Text: AIGaAs INFRARED EMITTING DIODE 'TWl ~ •• S fe * ] PTDELECTRONICS QED221/222 DESCRIPTION PACKAGE DIMENSIONS The Q E D 22X is an 880nm AIGaAs LED en capsulated in a clear, purple tinted, plastic T-13/* package. FEATURES ■ Tight production E„ distribution.
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QED221/222
QED22X
880nm
ST2133
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sot234 jt
Abstract: PCA84C MCD251
Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 PHILIPS Philips Semiconductors Product specification
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PCA84C122;
84CXXX
84CXXX
SCD39
/1500/03/pp24
sot234 jt
PCA84C
MCD251
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PDF
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QED221
Abstract: QED222 880nm
Text: LËU AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED221/222 PACKAGE DIMENSIONS DESCRIPTION The QED22X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic T-13/4 package. FEATURES • Tight production Ee distribution. ■ Steel lead frames for improved reliability in solder
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QED221/222
QED22X
880nm
QSD12X
ST2133
QED222
mW/10Â
67mW/Â
QED221
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sot234 jt
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 Philips Semiconductor PHILIPS 7110fl2b 006^077 TOT 1995 May 01
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PCA84C122;
7110fl2b
711DflSb
sot234 jt
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specification diode BY 127
Abstract: diode BY 127 SPECIFICATION BB112 capacitance diode
Text: Philips Semiconductors Product specification AM variable capacitance diode BB112 FEATURES • Matched to 3% k « Leaded plastic package S T - - • C8.5: 23 pF; ratio: 21. . M — Hh 3 M A M 222 APPLICATIONS Fig. 1 Simplified outline SOD69; TO-92 variant and symbol.
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BB112
BB112
MAM222
7110fi2b
specification diode BY 127
diode BY 127 SPECIFICATION
capacitance diode
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PCA84C122
Abstract: DIP20 PCA84C222 S020 S028 SDIP24 PCA84C
Text: INTEGRATED CIRCUITS PCA84C122; 222; 422; 622; 822 8-bit microcontrollers for remote control transmitters Product specification Supersedes data of February 1994 File under Integrated Circuits, IC14 1995 May 01 Philips Semiconductor« PHILIPS ht f l Q # 3 s
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PCA84C122;
711002b
84CXXX
PCA84C122
DIP20
PCA84C222
S020
S028
SDIP24
PCA84C
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