21-74 SILICONIX Search Results

Si4493DY

Contextual Info: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

QG-57

Abstract: Si4493DY
Contextual Info: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Si7658ADP

Abstract: Si7658ADP-T1-GE3 Si7658DP Si7658DP-T1-E3 Si7658DP-T1-GE3 SI7658A C2320
Contextual Info: Specification Comparison Vishay Siliconix Si7658ADP vs. Si7658DP Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7658ADP-T1-GE3 replaces Si7658DP-T1-GE3 Si7658ADP-T1-GE3 replaces Si7658DP-T1-E3

Si4493DY

Contextual Info: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DG9431

Abstract: DG9431DV DG9431DY HP4192A
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max

DG9232

Abstract: DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A
Contextual Info: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

Contextual Info: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

DG9431

Abstract: DG9431DV DG9431DY HP4192A
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max

Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max

Si488DY

Abstract: schematic diagram 12v 48v dc buck boost convert schematic diagram 12v - 48v dc buck boost convert PCIM 177 SI9118 48V to 12V buck boost transformer RMS-26 schematic diagram dc-dc flyback converter 1545CT 2N4401
Contextual Info: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany POINT OF LOAD CONVERTERS - The Topologies, Converters, and Switching Devices Required for Efficient Conversion Jess Brown, Vishay Siliconix, UK e -mail: jess.brown@vishay.com Abstract Point of load POL or point of use (POU)

DG9232

Abstract: DG9232DQ DG9232DY DG9233 DG9233DQ DG9233DY HP4192A
Contextual Info: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

Si6963DQ

Contextual Info: SPICE Device Model Si6963DQ Vishay Siliconix Dual P-Channel 2.5-V G-S Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DG9431

Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation +2.7 Available to +5 V D Low On-Resistance - rDS(on): 20 W D Fast Switching - tON : 35 ns, tOFF: 20 ns D Low Leakage - ICOM(on): 200-pA max D Low Charge Injection - QINJ: 1 pC

Contextual Info: DG9232/9233 Siliconix Low Voltage Dual SPST Analog Switch New Product FEATURES D D D D D D D D D Low Voltage Operation +2.7 to +5 V Low On-Resistance - rDS(on): 20 W Fast Switching - tON : 35 ns, tOFF: 20 ns Low Leakage - ICOM(on): 200-pA max Low Charge Injection - QINJ: 1 pC

MOSFET 200v 20A n.channel

Abstract: SUM27N20-78 72285
Contextual Info: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM27N20-78

Contextual Info: SPICE Device Model SUM27N20-78 Vishay Siliconix N-Channel 200-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

DG9232

Abstract: DG9232DY DG9232DY-E3 DG9232DY-T1-E3 DG9233 DG9233DY
Contextual Info: DG9232/9233 Vishay Siliconix Low-Voltage Dual SPST Analog Switch DESCRIPTION FEATURES The DG9232/9233 is a single-pole/single-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on):

DG9431

Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9431 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on): 20 Ω)

DG9431DV-T1

Abstract: 71009 DG9431 DG9431DY-T1 HP4192A DG9431DV-T1-E3
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch DESCRIPTION FEATURES The DG9431 is a single-pole/double-throw monolithic CMOS analog device designed for high performance switching of analog signals. Combining low power, high speed tON: 35 ns, tOFF: 20 ns , low on-resistance (rDS(on): 20 Ω)

DG9431

Abstract: DG9431DV-T1 DG9431DY-T1 HP4192A v08 marking
Contextual Info: DG9431 Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS D Low Voltage Operation +2.7 Available to +5 V D Low On-Resistance - rDS(on): 20 W D Fast Switching - tON : 35 ns, tOFF: 20 ns D Low Leakage - ICOM(on): 200-pA max D Low Charge Injection - QINJ: 1 pC

Contextual Info: SPICE Device Model SiR408DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: SiHA22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) typ. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg

Contextual Info: SiHB22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg