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Vishay Siliconix SI4493DY-T1-E3 MOSFET P-CH 20V 10A 8SO
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DigiKey	SI4493DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.025	Buy Now

SI4493DY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4493DY		Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
Si4493DY SPICE Device Model		Vishay	P-Channel 2.5-V (G-S) MOSFET		Original	PDF
SI4493DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10A 8SOIC		Original	PDF
SI4493DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10A 8SOIC		Original	PDF

SI4493DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	PDF	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 08-Apr-05
Untitled Abstract: No abstract text available Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si4493DY-T1 Abstract: Si4493DY-T1-E3 Si4493DY Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	PDF	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 S-61005-Rev. 12-Jun-06
Untitled Abstract: No abstract text available Text: Si4493DY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • TrenchFET Power MOSFET Pb-free APPLICATIONS Available RoHS* • Load Switch	Original	PDF	Si4493DY Si4493DY-T1 Si4493DY-T1-E3 18-Jul-08
Si4493DY Abstract: Si4493DY-T1 S3142 Text: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7	Original	PDF	Si4493DY Si4493DY-T1 S-31420--Rev. 07-Jul-03 S3142
Si4493DY Abstract: Si4493DY-T1-E3 Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 18-Jul-08
Si4493DY Abstract: No abstract text available Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4493DY 12-Jun-03
on 5295 transistor Abstract: on 5295 AN609 Si4493DY 1.0722 Text: Si4493DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si4493DY AN609 19-Mar-07 on 5295 transistor on 5295 1.0722
Si4493DY Abstract: No abstract text available Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4493DY 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.00775 at VGS = - 4.5 V - 14 0.01225 at VGS = - 2.5 V - 11 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si4493DY 2002/95/EC Si4493DY-T1-E3 Si4493DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
QG-57 Abstract: Si4493DY Text: SPICE Device Model Si4493DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4493DY S-52525Rev. 12-Dec-05 QG-57
Untitled Abstract: No abstract text available Text: Si4493DY New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.00775 @ VGS = - 4.5 V - 14 0.01225 @ VGS = - 2.5 V - 11 D TrenchFETr Power MOSFET APPLICATIONS D Load Switch - 20 S SO-8 S 1 8 D S 2 7	Original	PDF	Si4493DY Si4493DY-T1 08-Apr-05