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    20AUG07 Search Results

    20AUG07 Datasheets Context Search

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    31GF6 diode

    Abstract: 31GF6 JESD22-B102 J-STD-002
    Text: 31GF6 Vishay General Semiconductor Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast reverse recovery time • Low forward voltage drop • Low switching losses, high efficiency • High forward surge capability DO-201AD


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    PDF 31GF6 DO-201AD 2002/95/EC 2002/96/EC 18-Jul-08 31GF6 diode 31GF6 JESD22-B102 J-STD-002

    COLOR tv tube charger circuit diagrams

    Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a

    FGP10B

    Abstract: FGP10D
    Text: New Product FGP10B thru FGP10D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time d* e t n e Pat *Glass Encapsulation


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    PDF FGP10B FGP10D DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 FGP10D

    specifications on 1n5818

    Abstract: No abstract text available
    Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41


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    PDF 1N5817 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 specifications on 1n5818

    Untitled

    Abstract: No abstract text available
    Text: SBYV26C Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for printed circuit boards • Ultrafast reverse recovery time • Low forward voltage drop ed* t n e Pat *Glass Encapsulation


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    PDF SBYV26C DO-204AL DO-41) MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    FGP30B

    Abstract: No abstract text available
    Text: New Product FGP30B thru FGP30D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    PDF FGP30B FGP30D MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05

    FGP30B

    Abstract: No abstract text available
    Text: New Product FGP30B thru FGP30D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency


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    PDF FGP30B FGP30D MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08

    FGP20B

    Abstract: No abstract text available
    Text: New Product FGP20B thru FGP20D Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current d* e t n e Pat • Low switching losses, high efficiency


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    PDF FGP20B FGP20D DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08

    SBYV27-200

    Abstract: SBYV27-50 SBYV27-100 SBYV27-150
    Text: SBYV27-50 thru SBYV27-200 Vishay General Semiconductor Soft Recovery Ultrafast Plastic Rectifier FEATURES • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency • High forward surge capability


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    PDF SBYV27-50 SBYV27-200 DO-204AC DO-15) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 SBYV27-200 SBYV27-100 SBYV27-150

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 thru 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • • • • • • • • DO-201AD PRIMARY CHARACTERISTICS IF AV 3.0 A VRRM 20 V, 30 V, 40 V IFSM 80 A VF 0.475 V, 0.500 V, 0.525 V TJ max. 125 °C Guardring for overvoltage protection


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    PDF 1N5820 1N5822 2002/95/EC 2002/96/EC DO-201AD DO-201AD 08-Apr-05

    BX 330 transistor

    Abstract: CDR02 CDR03 CDR31 CDR32 CDR33 45026 CDR31BP
    Text: CDR-MIL-PRF-55681 Vishay Vitramon Surface Mount Multilayer Ceramic Chip Capacitors, Qualified, Type CDR FEATURES • Military qualified products • Federal stock control number, CAGE CODE 95275 • High reliability tested per MIL-PRF-55681 Available RoHS*


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    PDF CDR-MIL-PRF-55681 MIL-PRF-55681 08-Apr-05 BX 330 transistor CDR02 CDR03 CDR31 CDR32 CDR33 45026 CDR31BP

    SB360S

    Abstract: DO-204AC JESD22-B102D J-STD-002B SB320S SB330S
    Text: New Product SB320S thru SB360S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • 20 kV ESD capability • Solder dip 260 °C, 40 seconds


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    PDF SB320S SB360S DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 SB360S DO-204AC JESD22-B102D J-STD-002B SB330S

    SB540A

    Abstract: SB550A JESD22-B102D J-STD-002B SB520A SB530A SB560A
    Text: New Product SB520A thru SB560A Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation


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    PDF SB520A SB560A DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 SB540A SB550A JESD22-B102D J-STD-002B SB530A SB560A

    1N5822 data sheet

    Abstract: 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B
    Text: 1N5820, 1N5821 & 1N5822 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


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    PDF 1N5820, 1N5821 1N5822 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 1N5822 data sheet 1N5820 1N5821 1N5822 JESD22-B102D J-STD-002B

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si5857DU S-71712Rev. 20-Aug-07

    DO-204AL

    Abstract: JESD22-B102D J-STD-002B SB1H100 SB1H90
    Text: New Product SB1H90 & SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency


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    PDF SB1H90 SB1H100 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 DO-204AL JESD22-B102D J-STD-002B SB1H100 SB1H90

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si5857DU Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si5857DU 18-Jul-08

    DM6030HK

    Abstract: TS3332LD XB1004-BD XP1013-BD XU1003-BD XU1003-BD-000V XU1003-BD-EV1
    Text: 19.0-26.0 GHz GaAs MMIC Transmitter U1003-BD August 2007 - Rev 20-Aug-07 Features Chip Device Layout Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 100% On-Wafer RF and DC Testing


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    PDF U1003-BD 20-Aug-07 MIL-STD-883 XU1003-BD-000V XU1003-BD-EV1 XU1003 DM6030HK TS3332LD XB1004-BD XP1013-BD XU1003-BD XU1003-BD-000V XU1003-BD-EV1

    SB140-E3/73

    Abstract: DO-204AL JESD22-B102D J-STD-002B SB130 SB160
    Text: SB120 thru SB160 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability • High frequency operation


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    PDF SB120 SB160 2002/95/EC 2002/96/EC DO-204AL DO-41) 08-Apr-05 SB140-E3/73 DO-204AL JESD22-B102D J-STD-002B SB130 SB160

    sb240 diode

    Abstract: DO-204AC JESD22-B102D J-STD-002B SB220 SB230 SB260
    Text: New Product SB220 thru SB260 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability


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    PDF SB220 SB260 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 sb240 diode DO-204AC JESD22-B102D J-STD-002B SB230 SB260

    1N5819 General Semiconductor

    Abstract: 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B
    Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41


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    PDF 1N5817, 1N5818, 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 1N5819 General Semiconductor 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B

    JESD22-B102D

    Abstract: J-STD-002B SB5H100 SB5H90
    Text: SB5H90 & SB5H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop


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    PDF SB5H90 SB5H100 DO-201AD 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B SB5H100 SB5H90

    ECR-07-01

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . C O P Y R IG H T 2 3 RELEASED BY ^ C O E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S REVISIO N S RESERVED. 50 LTR K2 K3 D D E S C R IP T IO N DATE DWN REVISED PER ECR-07-01


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    PDF ECR-07-018788 20AUG07 ECO-09-021826 05JAN10 160CT2006 31MAR2000 ECR-07-01

    tyco 089

    Abstract: No abstract text available
    Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T 2 R EU EA SED FO R PU B U IC ATIO N BY ^ C O EUECTRO NICS CO RPO RATIO N . - - 50 AUU R IG H T S R E S E R V E D . REVISION S LTR A1 D D E S C R IP T IO N DATE REL PER ECR 0 7 -0 1 9 4 1 5 DWN


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    PDF 20AUG07 21JUN07 31MAR2000 tyco 089