21JUN07 Search Results

k 2761

Abstract: MTA-156 A 2761 I 4 502 5881 tyco 506 K 2761 I 54q1 46411
Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IST REVISIO N S RESERVED. C O R P O R A T IO N . D E S C R IP T IO N P ECO—0 7 —O1 21JUN07

Contextual Info: 4 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC REVISIONS D IST 00 ALL RIG HTS R E S E R V E D . D ESC R IPTIO N AA1 ECO —0 7 —01 4741 KW DC 21JUN07 ‘MAX CUTOF D 4.1 9 f [.1 6 5 ] 3.

Multilayer Ceramic Dipped Axial and Radial Capacitors

Abstract: 1C20X7R104K050 VISHAY MARKING CODE
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book mlcc dipped a xial and radial vishay vse-db0074-0911 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

790D

Abstract: 790D/CTS27
Contextual Info: 790D Vishay Sprague Resin-Molded, Radial-Lead Solid Tantalum Capacitors FEATURES • Terminations: Tin/lead SnPb , 100 % Tin (Sn) • Four case sizes precisely molded with a flame retardant epoxy resin • Stand off on all case sizes Pb-free Available RoHS*

9434

Abstract: AN609 SiA414DJ
Contextual Info: SiA414DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si5515DC
Contextual Info: Si5515DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

5622

Abstract: diode 1334 AN609
Contextual Info: Si1073X_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

3809

Abstract: 7483 AN609 28728
Contextual Info: SUM90N04-3m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

marking codes TSOT23-5

Abstract: SH 05.22 CAT6217 CAT6217-150TD-GT3 CAT6217-180TD-GT3 CAT6217-250TD-GT3 CAT6217-280TD-GT3 CAT6217-285TD-GT3 MO-229 CAT6217-330TDGT3
Contextual Info: CAT6217 150mA CMOS LDO Regulator FEATURES DESCRIPTION „ Guaranteed 150mA output current The CAT6217 is a 150mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. „ Low dropout voltage of 90mV typical at 150mA

TEDEA

Abstract: Tedea-Huntleigh Tedea-Huntleigh* 355 TEDEA model 380 Tedea-Huntleigh model 355 BELT Weighing scale single LOAD CELL vishay vt 300 wiring schematic Tedea-Huntleigh BY
Contextual Info: Model 355 Vishay Tedea-Huntleigh Welded, Hermetically Sealed Load Cell FEATURES • • • • Capacities 5 - 500kg Stainless steel construction OIML R60 and NTEP approved IP68 protection OPTIONAL FEATURES • EEx ia IIC T6 hazardous area approval • FM approval available

AN609

Contextual Info: SiA511DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

binary to gray code converter using PCB design

Abstract: 001lV binary to gray code converter KAD5610P KAD5610P-12 KAD5610P-17 KAD5610P-21 KAD5610P-25
Contextual Info: KAD5610P Preliminary Dual 10-Bit, 250/210/170/125MSPS A/D Converter General Description The KAD5610P is a family of low-power, highperformance, dual-channel 10-bit, analog-to-digital converters. Designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS

binary to gray code converter

Abstract: KAD5612P KAD5612P-12 KAD5612P-17 KAD5612P-21 KAD5612P-25 binary to gray code converter using PCB design 76BF control 001
Contextual Info: KAD5612P Preliminary Dual 12-Bit, 250/210/170/125MSPS A/D Converter General Description The KAD5612P is a family of low-power, highperformance, dual-channel 12-bit, analog-to-digital converters. Designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS

CAT6217

Abstract: CAT6217-150TD-GT3 CAT6217-180TD-GT3 CAT6217-250TD-GT3 CAT6217-280TD-GT3 CAT6217-285TD-GT3 MO-229
Contextual Info: CAT6217 150mA CMOS LDO Regulator FEATURES DESCRIPTION „ Guaranteed 150mA output current The CAT6217 is a 150mA CMOS low dropout regulator that provides fast response time during load current and line voltage changes. „ Low dropout voltage of 90mV typical at 150mA

AN609

Contextual Info: SiA913DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

121-398

Abstract: 4828 datasheet 4828 7483 transistor c 6073 AN609
Contextual Info: SUM90N06-4m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si5504DC
Contextual Info: Si5504DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Electrical Data and Dielectric Characteristics Vishay Multilayer Ceramic Dipped Radial Capacitors 200 VDC and 500 VDC DIELECTRIC CHARACTERISTICS DIELECTRIC ACCORDING TO EIA According to CECC C0G NP0 X7R CG C1 (2C1) Capacitance Range: at 1 MHz, 1 V; where C ≤ 1000 pF

TDC 1013

Abstract: binary to gray code converter using PCB design KAD5512P binary to gray code converter 500MSPS KAD5512HP-25 KAD5512P-25 KAD5512P-50 KAD5514P-12 KAD5514P-21
Contextual Info: KAD5512P-50 Preliminary 12-Bit, 500MSPS A/D Converter General Description The KAD5512P-50 is a low-power, high-performance, 12-bit , 50 0MSPS analog-t o-digit al converter designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS process. The

binary to gray code converter using PCB design

Abstract: binary to gray code converter KAD5512P 500MSPS KAD5510P-50 KAD5512P-25 KAD5512P-50 KAD5514P-12 KAD5514P-17 KAD5514P-21
Contextual Info: KAD5510P-50 Preliminary 10-Bit, 500MSPS A/D Converter General Description The KAD5510P-50 is a low-power, high-performance, 10-bit , 50 0MSPS analog-t o-digit al converter designed with Kenet’s proprietary FemtoCharge technology on a standard CMOS process. The

SOt10 Package

Abstract: Optocoupler 701 Optocoupler 16 Pin quad SFH6942 SFH6942AT
Contextual Info: SFH6942A Vishay Semiconductors Optocoupler, Phototransistor Output, SOT-223/10, Quad Channel FEATURES • Transistor optocoupler in SOT-223/10 package • End stackable, 1.27 mm spacing • Low current input e3 • Good CTR linearity versus forward current

AN609

Abstract: SiA417DJ
Contextual Info: SiA417DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: Si1300BDL 300959
Contextual Info: Si1300BDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Contextual Info: Si4409DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].