20APR09 Search Results
20APR09 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 107-68787 Packaging Specification 20Apr09 Rev E 2MM PITCH BATTERY CONNECTOR 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2MM PITCH BATTERY CONNECTOR. 订定 2MM PITCH BATTERY CONNECTOR 产品之包装规格及包装方式。 |
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20Apr09 295X182X13 295X182X16 295X182X24 QR-ME-030B | |
Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Si3447CDV-T1-GE3Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 11-Mar-11 | |
Si4501DY
Abstract: Si4501DY-T1-E3
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Si4501DY 2002/95/EC Si4501DY-T1 Si4501DY-T1-E3 11-Mar-11 | |
at91samContextual Info: Features • Two-pin UART – Implemented Features are USART Compatible – Independent Receiver and Transmitter with a Common Programmable Baud Rate Generator – Even, Odd, Mark or Space Parity Generation – Parity, Framing and Overrun Error Detection – Automatic Echo, Local Loopback and Remote Loopback Channel Modes |
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6418BS 20-Apr-09 at91sam | |
tsop6 packageContextual Info: New Product Si3483CDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.034 at VGS = - 10 V - 8a 0.053 at VGS = - 4.5 V -7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si3483CDV 2002/95/EC Si3483CDV-T1-E3 Si3483CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 tsop6 package | |
Contextual Info: Si3447CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.036 at VGS = - 4.5 V - 7.8 0.050 at VGS = - 2.5 V - 6.6 0.068 at VGS = - 1.8 V - 5.6 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3447CDV 2002/95/EC Si3447CDV-T1-E3 Si3447CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiJ800DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.0095 at VGS = 10 V 20a 0.0115 at VGS = 4.5 V 20a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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SiJ800DP 2002/95/EC SiJ800DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si5456Contextual Info: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21 |
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Si5456DU 2002/95/EC Si5456DU-T1-GE3 11-Mar-11 si5456 | |
Contextual Info: New Product Si3473CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.022 at VGS = - 4.5 V -8 0.028 at VGS = - 2.5 V -8 0.036 at VGS = - 1.8 V -8 • Halogen-free According to IEC 61249-2-21 Definition |
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Si3473CDV 2002/95/EC Si3473CDV-T1-E3 Si3473CDV-T1-GE3 11-Mar-11 | |
Contextual Info: SiS902DN Vishay Siliconix Dual N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.186 at VGS = 10 V 4e 0.228 at VGS = 4.5 V 4e Qg (Typ.) 2.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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SiS902DN 2002/95/EC SiS902DN-T1-GE3 18-Jul-08 | |
LCD-320H240BP2
Abstract: LCD-320H240BP3 LCD-320H240BX
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LCD-320H240BX, LCD-320H240BP2, LCD-320H240BP3 S1D13700 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A LCD-320H240BP2 LCD-320H240BP3 LCD-320H240BX | |
LCD-320H240HContextual Info: LCD-320H240H Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: None • Duty cycle: 1/240 • + 5 V power supply • Touch screen option analog type • Compliant to RoHS directive 2002/95/EC |
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LCD-320H240H 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 LCD-320H240H | |
Contextual Info: LCD-320H240L Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: None • Duty cycle: 1/240 • + 5 V power supply • Touch screen option • Compliant to RoHS directive 2002/95/EC MECHANICAL DATA |
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LCD-320H240L 2002/95/EC 18-Jul-08 | |
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LCD 320 240 EL
Abstract: RA8803 STN LCD controller
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LCD-320H240R RA8803 LCD-320H240B 2002/95/EC 18-Jul-08 LCD 320 240 EL RA8803 STN LCD controller | |
Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si7613DN 2002/95/EC Si7613DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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Si3458BDV 2002/95/EC Si3458BDV-T1-E3 Si3458emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: LCD-320H240B Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: RA8835 and SRAM • Duty cycle: 1/240 • Built-in N.V. • Touch screen option analog type • Temperature compensation option |
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LCD-320H240B RA8835 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiJ800DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.0095 at VGS = 10 V 20a 0.0115 at VGS = 4.5 V 20a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested |
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SiJ800DP 2002/95/EC SiJ800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SUM90P10-19L Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V - 90 0.021 at VGS = - 4.5 V - 85 Qg (Typ.) • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 97 nC |
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SUM90P10-19L 2002/95/EC O-263 SUM90P10-19L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si3471CDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A)a 0.027 at VGS = - 4.5 V -8 0.036 at VGS = - 2.5 V -8 0.048 at VGS = - 1.8 V - 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET |
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Si3471CDV 2002/95/EC Si3471CDV-T1-E3 Si3471CDV-T1-GE3 11-Mar-11 | |
CAT34TS02VP2GT4A
Abstract: 1E70 CAT34TS02 marking code onsemi Diode B14 JC42 MO-229 34TS02
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CAT34TS02 CAT34TS02 MD-1129 CAT34TS02VP2GT4A 1E70 marking code onsemi Diode B14 JC42 MO-229 34TS02 | |
SUM90P10-19L
Abstract: SUM90P10-19L-E3
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SUM90P10-19L 2002/95/EC O-263 SUM90P10-19L-E3 11-Mar-11 SUM90P10-19L SUM90P10-19L-E3 | |
RA8835Contextual Info: LCD-320H240C Vishay 320 x 240 Graphic LCD FEATURES • Type: Graphic • Display format: 320 x 240 dots • Built-in controller: RA8835 and SRAM • Duty cycle: 1/240 • Built-in N.V. • Touch screen option analog type • Temperature compensation option |
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LCD-320H240C RA8835 2002/95/EC 11-Mar-11 |